isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous -50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞ 19 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 600 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.0 2.0 pF rbb’ • CC Base Time Constant VCB= 10V,IC = 10 mA,f = 31.8 MHz 10 25 ps PG Power Gain VCE = 10 V,IC = 5mA;f = 45MHz 33 dB PG Power Gain VCE = 10 V,IC = 5mA;f = 200MHz 18 dB fT isc Website：www.iscsemi.cn 2 1000 MHz INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC1906 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC1906 4