JMnic Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A IB Base current -0.5 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA940 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50m A Base-emitter on voltage IC=-0.5A ; VCE=-10V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -150 V V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V ICBO Collector cut-off current VCB=-120V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-10V COB Output capacitance IE=0; VCB=-10V;f=1MHz 55 pF fT Transition frequency IC=-0.5A ; VCE=-10V 4 MHz VBE CONDITIONS 2 MIN TYP. -0.75 40 MAX UNIT -1.5 V -0.85 V 140 JMnic Product Specification 2SA940 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SA940 Silicon PNP Power Transistors 4