isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1569 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·Complement to Type 2SD2400 APPLICATIONS ·Designed for power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -120 V -120 V -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1569 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current -1.0 μA hFE DC Current Gain fT COB CONDITIONS B TYP. B B n c . i m e s c s i . w w w MIN VEB= -4V; IC= 0 IC= -1A; VCE= -5V 100 MAX UNIT 200 Current-Gain—Bandwidth Product IC= -0.1A;VCE= -5V; ftest= 30MHz 50 MHz Collector Output Capacitance IE= 0; VCE= -10V; ftest= 1MHz 30 pF isc Website：www.iscsemi.cn 2