isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB871 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS ·Designed for low voltage switching applications. SYMBOL ww PARAMETER w n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VALUE UNIT -40 V -20 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB871 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -0.33A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -0.33A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V hFE-2 DC Current Gain COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 400 pF Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 100 MHz 0.1 μs 0.5 μs 0.1 μs fT ton Turn-On Time ts Storage Time tf Fall Time s c s i . w IC= -3A; IB1= -IB2= -0.1A hFE-2 Classifications R Q P 60-120 90-180 130-260 isc Website：www.iscsemi.cn MIN 2 TYP. MAX -20 n c . i m e IC= -3A; VCE= -2V w w Switching Times CONDITIONS UNIT V 45 60 260