Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ・Fast switching times APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER E SEM R O T UC D N O IC VALUE UNIT Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V G N A H Collector-base voltage INC CONDITIONS IC Collector current-DC 10 A ICM Collector current-peak 15 A IB Base current 5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=400V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V Switching times tr tstg tf 体 导 半 固电 Rise time CONDITIONS Storage time IN MAX R O T UC OND VCC=200V; IC=5.0A IB1=-IB2=0.5A;RL=40 Ω 2 TYP. UNIT 10 C I M E SE G N A CH Fall time MIN 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC