isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 100 V 100 V 7 V s c s i . w w w IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous 0.5 A IBM Base Current-Peak 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.17 ℃/W isc Website：www.iscsemi.cn 2SD1022 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1022 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 3A; IB= 3mA 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE=0 0.1 mA ICEO Collector Cutoff Current VCE= 100V; IB=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 5 mA hFE DC Current Gain IC= 3A; VCE= 3V fT CONDITIONS B m e s c s i . Switching times w w w Turn-on Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. B Current-Gain—Bandwidth Product ton MIN IC= 0.5A; VCE= 10V IC= 5A, IB1= -IB2= 5mA RL= 5Ω; VBB2= 4V 2 1500 n c . i 30000 20 MHz 2.0 μs 5.0 μs 3.0 μs