0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of High Power Silicon Carbide Transistors from Microsemi PPG. CASE OUTLINE 55KT FET (Common Gate) See outline drawing ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Drain Current (Idg) Temperatures Storage Temperature Operating Junction Temperature 250 V - 1V 35A -65 to +150°C +250°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS Idss1 Igss θJC1 Drain-Source Leakage Current Gate-Source Leakage Current Thermal Resistance TEST CONDITIONS MIN TYP VGS = -15V, VDG = 95V VGS = -20V, VDS = 0V Pout=1250W MAX UNITS 750 50 0.15 µA µA ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(avg) = 500 mA, Freq = 155 MHz, GPG Pin ηd ψ Po +1dB Vsg Common Gate Power Gain Input Power Drain Efficiency Load Mismatch Power Output – Higher Drive Source-Gate Voltage Pout = 1250 W, Pulsed Pulse Width = 300us, DF = 10% F = 155 MHz, Pout =1250W F = 155 MHz, Pout = 1250W F = 155 MHz, Pin = 190 W Set for Idq(avg) = 500 mA 9.0 9.5 150 160 60 dB W % 10:1 1400 3.0 10.0 W Volts Dec 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0150SC-1250M Rev B 0150SC-1250M Typical RF Performance Curve 0150SC-1250M: Gain and Pout 300uS 10% , 125V 1800 12 11 1600 9 1400 8 1200 7 1000 6 800 5 4 600 3 400 Pout (W) Gain (dB) 10 Gain Pout 2 200 1 0 0 50 100 150 0 250 200 Pin (W ) 0150SC-1250M: Pin vs Eff 300uS 10% , 125V 80.00% 70.00% Drain Eff (%) 60.00% 50.00% Drain Eff 40.00% 30.00% 20.00% 10.00% 0.00% 0 50 100 150 200 250 Pin (W ) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0150SC-1250M Rev B 0150SC-1250M Test Circuit Information Source Pulser Part C1, C6, C10, C12 C2 C3 C4, 14 C5 C7 C8, C9 C11, C15 C13 C16 PCB L2, L3 0150SC-1250M Test Circuit Component Designations and Values Description Part Description 2200pF Chip Capacitor (ATC 700B) L1, L4 Ferrite Coil Inductor 12pF Chip Capacitor (ATC 100B) 56pF Chip Capacitor (ATC 100B) 68pF Chip Capacitor (ATC 100B) 100pF Chip Capacitor (ATC 100B) 1000uF 160V Electrolytic Capacitor 1uF Chip Capacitor 15pF Chip Capacitor (ATC 100B) 47pF Chip Capacitor (ATC100B) 22pF Chip Capacitor (ATC100B) Rogers 6006, εr=6.15, 50mils, 1oz 7 Turns, 18AWG, IDIA 0.2” Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Z10 71 x 5450 mils (W x L) 71 x 830 mils (W x L) 71 x 435 mils (W x L) 190 x 430 mils (W x L) 71 x 555 mils (W x L) 71 x 340 mils (W x L) 71 x 1285 mils (W x L) 71 x 1520 mils (W x L) 71 x 2810 mils (W x L) Note: All Z length dimensions include bends Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0150SC-1250M Rev B 0150SC-1250M Impedance Information Input Matching Network Output Matching Network ZS ZL Typical Impedance Values Frequency (MHz) 156 ZS(Ω) ZL(Ω) 0.7 - j0.52 3.7 + j3.8 * VDD = 125V, IDQ(avg) = 500mA, Pout = 1250W * Pulse Format: 300µs, 10% Long Term Duty Factor Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0150SC-1250M Rev B 0150SC-1250M Case Outline 55 KT FET Common Gate 1 = Drain 2 = Gate 3 = Source Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct.