CHENMKO ENTERPRISE CO.,LTD 2SB1386PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) DPAK (1) (3) (2) Q : Q86 .110 (2.80) .087 (2.20) R: R86 .028 (0.70) .019 (0.50) .035 (0.90) .181 (4.60) .024 (0.60) .268 (6.80) .252 (6.40) C (3) CIRCUIT .020 (0.51) * hFE Classification P : P86 .050 (1.27) .020 (0.51) MARKING .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .394 (10.00) .354 (9.00) .228(5..80) .217 (5.40) .050 (1.27) .030 (0.77) * High saturation current capability. .023 (0.58) .018 (0.46) 1 Base 2 Emitter (1) B 3 Collector ( Heat Sink ) E (2) Dimensions in inches and (millimeters) DPAK MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS CONDITION SYMBOL 2SB1386PPT UNITS Collector - Base Voltage Open Emitter VCBO -30 Volts Collector - Emitter Voltage Open Base VCEO -20 Volts Emitter - Base Voltage Open Collector VEBO -6 Volts IC -5 Amps ICM -10 Amps PTOT 1.0 Collector Current DC Peak Collector Current Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature Note 1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm. TSTG TJ TAMB W -55 to +150 o C +150 o C -55 to +150 o C 2007-05 RATING CHARACTERISTIC CURVES ( 2SB1386PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS SYMBOL MIN. TYPE MAX. UNITS IC=-50uA BVCBO -30 - - Volts Collector-Emitter breakdown voltage IC=-1mA BVCEO -20 - - Volts Emitter-Base breakdown voltage IE=-50uA BVEBO -6 - - Volts Collector Cut-off Current IE=0; VCB=-20V ICBO - - -0.5 uA Emitter Cut-off Current IC=0; VEB=-5V IEBO - - -0.5 uA DC Current Gain VCE=-2V; Note 1 IC=-0.5A hFE 82 - 390 Collector-Emitter Saturation Voltage IC=-4A; IB=-0.1A VCEsat - -0.35 -1.0 Volts Output Capacitance IE=ie=0; VCB=-20V; f=1MHz CC - 60 - pF Transition Frequency IE=-0.05A; VCE=-6.0V; f=100MHz fT - 120 - MHz Collector-Base breakdown voltage CONDITION Note : 1. hFE(2) Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390. RATING CHARACTERISTIC CURVES ( 2SB1386PPT ) Fig.1 Grounded emitter propagation characteristics -5 Ta=100oC 25oC -25oC -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5m -4 -2 -5mA -1 -0.4 -0.6 -0.8 -1.0 -1.2 0 -1.4 0 1000 VCE=-5V 500 200 -2V 100 -1V 50 20 Fig.4 DC current gain vs. collector current ( II ) -1.2 IB 0mA -1.6 -2.0 5000 VCE = -1V 500 DC CURRENT GAIN : hFE Ta=100oC 25oC -25oC VCE=-2V 200 100 50 20 10 Ta=100oC 25oC -25oC 1000 500 200 100 50 20 10 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) -0.01 -0.1 -1 IC/IB=10 IC/IB=30 -0.5 Ta=100oC 25oC -25oC Ta=100oC 25oC -25oC -0.2 -0.1 -0.05 -0.02 -0.01 -2m -0.01 -0.1 -1 COLLECTOR CURRENT : IC (A) -10 COLLECTOR CURRENT : IC (A) -1 -10 -10 Ta=25oC -1 -0.5 -0.2 -0.1 -0.05 IC/IB=50 40 30 10 -0.02 -0.01 -2m -0.01 -0.1 -10 -1 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) -1 -0.1 -2 COLLECTOR CURRENT : I (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) -2 5 -1m -0.01 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) 2000 1000 5 -1m Fig.5 DC current gain vs. collector current ( III ) 2000 5 -1m -0.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) 5000 -0.4 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -0.2 Fig.9 Collector-emitter saturation voltage vs. collector current ( IV ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0 DC CURRENT GAIN : hFE -10mA -40mA -35mA -3 Ta=25oC 2000 10 -2m -1m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5000 o Ta=25 C -30mA -25mA -20mA -15mA -50mA -45mA DC CURRENT GAIN : hFE VCE = -2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : Ic (A) -10 -5 Fig.3 DC current gain vs. collector current ( I ) Fig.2 Grounded emitter output characteristics -2 IC/IB=40 -1 -0.5 Ta=100oC 25oC -25oC -0.2 -0.1 -0.05 -0.02 -0.01 -2m -0.01 -0.1 -1 COLLECTOR CURRENT : IC (A) -10