Transistors SMD Type Power Transistor 2SB1427 Features Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -2 A Collector current(Pulse) ICP * -3 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -20 V Collector-emitter breakdown voltage BVCEO IC=-1mA -20 V Emitter-base breakdown voltage BVEBO IE=-50ìA -6 ICBO VCB=-16V -0.5 ìA IEBO VEB=-5V -0.5 ìA VCE(sat) IC=-1A,IB=-500mA -0.5 V Collector cutoff current Emitter cutoff current DC current transfer ratio V Collector-emitter saturation voltage hFE VCE=-6V, IC=-0.5A 390 820 Transition frequency Cob VCE=-10V, IE=10mA, f=30MHz 90 MHz Output capacitance fT VCB=-10V, IE=0A, f=1MHz 30 pF Marking Marking BJE www.kexin.com.cn 1