isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD847 DESCRIPTION ·Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 APPLICATIONS ·Audio amplifier applications ·Series regulators applications ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD847 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.8 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 0.01 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 5A ; VCE= 2V 40 TYP. MAX UNIT 240 Switching times ton Turn-on Time tstg Storage Time tf IC= 15A , IB1= -IB2= 1.5A RL= 2Ω;PW =20μs Duty Cycle≤2% Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 2.0 μs 1.0 μs