2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier REJ03G0810-0200 (Previous ADE-208-1388A) Rev.2.00 Aug.10.2005 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Complementary pair with 2SB1691 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “WM-“. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to Base Voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current ic(peak) Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: *When using alumina ceramic board (25 x 60 x 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings 60 50 6 1 2 800* 150 −55 to +150 Unit V V V A A mW °C °C 2SD2655 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Min 60 50 6 200 Typ 0.16 Max 100 100 500 0.3 Unit V V V nA nA V Test Condition IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VBE(sat) 0.91 1.2 V fT Cob 280 4.2 MHz pF IC = 0.5 A, IB = 0.05 A, Pulse test VCE = 2 V, IC = 0.1 A IC = 0.5 A, IB = 0.05 A, Pulse test VCB = 10 V, IE = 0, f = 1 MHz 2SD2655 Main Characteristics Typical Output Characteristics (1) 1200 200 When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm IC (mA) Pulse 1000 800 Collector Current Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 400 200 0 50 100 150 Ambient Temperature (°C) 250 µA 100 200 µA 150 µA 100 µA 50 µA 2 2mA 300 IB = 1mA 200 100 Pulse 0.8 1.2 Collector to Emitter Voltage 1.6 hFE DC Current Transfer Ratio 100 10 VCE = 2V Pulse 1 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 10 0 1000 0.2 0.4 0.6 0.8 Base to Emitter Voltage VCE (V) 1000 10 100 1 DC Current Transfer Ratio vs. Collector Current 1 VCE (V) V CE = 2V Pulse 2.0 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 0.4 10 1000 3mA 4mA 400 0 8 6 Typical transfer Characteristics Collector Current IC (mA) IC (mA) Collector Current 5mA 6mA 4 Collector to Emitter Voltage Typical Output Characteristics (2) 500 50 µA 300 µA 0 200 Ta IB = 3 1.0 VBE (V) Saturation Voltage vs. Collector Current 1 VBE(sat) 0.1 VCE(sat) 0.01 IC/IB = 10 Pulse 0.001 1 10 100 Collector Current IC (mA) 1000 2SD2655 Gain Bandwidth Product vs. Collector Current fT (MHz) 1000 f = 1MHz IE = 0 100 Gain Bandwidth Product Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 10 1 0.1 1 10 Collector to Base Voltage Rev.2.00 Aug 10, 2005 page 4 of 5 100 VCB (V) 500 VCE = 2V Pulse 400 300 200 100 0 1 10 Collector Current 100 IC (mA) 1000 2SD2655 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SD2655WM-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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