Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1323 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector current (pulse) ICP -5 A Collector dissipation PC * 1.5 W Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature 2 * Mounted on ceramic board 250mm X0.8mm www.kexin.com.cn 1 Transistors SMD Type 2SB1323 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO DC current Gain hFE Min Typ VCB = 30V , IE = 0 VCE = -2V , IC = -0.5A 70 VCE = -2V , IC = -2A 50 Max Unit -1 ìA fT VCE = -2V , IC = -0.5A 100 MHz Cob VCB = -10V , f = 1MHz 55 pF VCE(sat) IC = -1A , IB = -50mA -0.18 -0.4 Base-emitter on state voltage VBE(ON) VCE = -2A , IC = -1A -2 -5 Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC = -10ìA , RBE = -40 V Base-emitter on state voltage V(BR)CEO IC = -10mA , RBE = -30 Gain bandwidth product Output capacitance Collector-emitter saturation voltage Diode forward voltage VF Base-emitter resistance RBE Base resistance R1 Marking Marking 2 Testconditons BK www.kexin.com.cn -1 V V IF=0.5A 1.5 0.8 120 V 160 V KÙ 200 Ù