Inchange Semiconductor Product Specification 2SC2987 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 12 A ICM Collector current-peak 20 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2987 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.4 2.0 V ICBO Collector cut-off current VCB=140V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=2A ; VCE=5V 60 hFE-2 DC current gain IC=5A ; VCE=5V 40 Transition frequency IC=1A ; VCE=5V 50 MHz Collector output capacitance IE=0;f=1MHz;VCB=10V 190 pF fT COB PARAMETER hFE-1 Classifications R Q P 60-120 100-200 160-320 2 320 Inchange Semiconductor Product Specification 2SC2987 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3