VISHAY 400UR120D

400U(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 400 A
FEATURES
• Wide current range
RoHS
• High surge current capabilities
COMPLIANT
• Stud cathode and stud anode version
• Standard JEDEC types
• RoHS compliant
DO-205AB (DO-9)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
IF(AV)
• Power supplies
400 A
• Machine tool controls
• High power drives
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
VALUES
UNITS
400
A
120
°C
630
A
50 Hz
8250
60 Hz
8640
50 Hz
340
60 Hz
311
Range
800 to 1600
V
- 40 to 200
°C
A
IFSM
I2 t
VRRM
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
80
800
900
120
1200
1300
160
1600
1700
400U(R)
Document Number: 93510
Revision: 23-Jun-08
For technical questions, contact: ind-modules@vishay.com
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
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400U(R) Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 400 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
TEST CONDITIONS
IF(AV)
180° conduction, half sine wave
IF(RMS)
DC at 110 °C case temperature
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2 t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
I2√t
No voltage
reapplied
UNITS
400
A
120
°C
630
A
8250
No voltage
reapplied
100 % VRRM
reapplied
VALUES
8640
6940
Sinusoidal half wave,
initial TJ = TJ maximum
7270
340
311
241
100 % VRRM
reapplied
A
kA2s
220
t = 0.1 to 10 ms, no voltage reapplied
3400
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.77
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.85
kA2√s
V
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.49
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.49
Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave
1.62
V
VALUES
UNITS
- 40 to 200
°C
mΩ
Maximum forward voltage drop
VFM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.15
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
K/W
Maximum allowed mounting torque
± 10 %
Not lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
27
N·m
250
g
DO-205AB (DO-9)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.020
0.013
120°
0.023
0.023
90°
0.029
0.031
60°
0.042
0.044
30°
0.073
0.074
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93510
Revision: 23-Jun-08
400U(R) Series
Maximum Allowable Case Temperature (°C)
200
190
180
170
160
150
140
130
120
110
100
90
80
400U/R
Conduction Angle
180°
120°
0
90°
60°
30°
50 100 150 200 250 300 350 400 450
200
400U/R
190
180
Conduction Period
170
160
150
140
DC
130
180°
120
30°
60°
90°
120°
110
0
100
200
300
400
500
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
550
RMS Limit
R
elta
-D
350
300
K/
W
0.3
K/
W
0.4
K/W
/W
4K
0.0
400
0.
2
=
SA
Rth
450
W
K/
180°
120°
90°
60°
30°
500
1
0.
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 400 A
0.6
K/W
250
200
150
Conduction Angle
1 K/
W
1.8 K/W
100
50
400U/R
0
50 100 150 200 250 300 350 400 450
10 30 50 70 90 110 130 150 170 190
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
800
0.2
K/
W
400
300
RMS Limit
Conduction Period
200
100
0
50
400U/R
150
250
350
450
0.3
K/W
0.4
K/W
0.6
K/W
1 K/W
aR
elt
-D
500
0.1
K/
W
/W
4K
0.0
600
=
DC
180°
120°
90°
60°
30°
700
A
hS
Rt
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
1.8 K/W
550
Average Forward Current (A)
650
10 30 50 70 90 110 130 150 170 190
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Document Number: 93510
Revision: 23-Jun-08
For technical questions, contact: ind-modules@vishay.com
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400U(R) Series
Vishay High Power Products Standard Recovery Diodes
8000
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
(Stud Version), 400 A
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 190°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7000
6000
5000
4000
3000
400U/R
2000
1
10
9000
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 190°C
No Voltage Reapplied
Rated Vrrm Reapplied
6000
5000
4000
3000
2000
400U/R
1000
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
400U/R
1000
Tj = 25°C
Tj = 190°C
100
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Transient Thermal Impedance ZthJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value:
RthJC = 0.15 K/W
(DC Operation)
0.01
0.001
0.001
400U/R
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93510
Revision: 23-Jun-08
400U(R) Series
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 400 A
ORDERING INFORMATION TABLE
Device code
40
0
U
R
160
D
1
2
3
4
5
6
1
-
40 = Essential part number
2
-
0 = Standard recovery device
3
-
U = Stud normal polarity (cathode to stud)
4
-
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
Diffused diode
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93510
Revision: 23-Jun-08
http://www.vishay.com/doc?95339
For technical questions, contact: ind-modules@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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