RENESAS 2SJ399

2SJ399
Silicon P-Channel MOS FET
REJ03G0193-0200Z
(Previous ADE-208-267 (Z) )
Rev.2.00
Apr.05.2004
Application
Low frequency power switching
Features
•
•
•
•
•
Low on-resistance
Small package
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for low signal load switch.
Outline
MPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
Note:
Marking is “ZF–”
Rev.2.00, Apr.05.2004, page 1 of 5
2SJ399
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note
IDR
Pch
Tch
Tstg
Ratings
–30
±20
–0.2
–0.4
–0.2
150
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Note: PW ≤ 100 µs, duty cycle ≤ 10%
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
–30
±20
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.7
2.0
1.1
22.3
0.17
530
2170
7640
7690
—
—
±2
–1
–2.0
7.5
7.0
—
—
—
—
—
—
—
V
V
µA
µA
V
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
ID = –100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –30 V, VGS = 0
ID = –10 µA, VDS = –5 V
ID = –20 mA, VGS = –4 V
ID = –10 mA, VGS = –10 V
VDS = –10 V
VGS = 0
f = 1 MHz
Note: Pulse Test
Rev.2.00, Apr.05.2004, page 2 of 5
ID = –0.1 A
VGS = –10 V
RL = 100 Ω
PW = 5 µs
2SJ399
–1
I D (A)
1 ms
100
50
–0.1
–0.03
Ta = 25 °C
50
100
150
Ambient Temperature
200
–0.001
–0.1
Typical Output Characteristics
–4 V
–0.8
–3.5 V
–3 V
–0.4
ID
–4.5 V
Drain Current
–1.2
(A)
Pulse Test
–5 V
–1
–3
–10
–30
–100
V DS (V)
Typical Transfer Characteristics
–0.5
–1.6
–0.3
Drain to Source Voltage
Ta (°C)
–2.0
I D (A)
Operation in
this area is
limited by R DS(on)
–0.01
–0.003
0
Drain Current
n
tio
ra
pe
O
Drain Current
150
–0.3
C
D
Channel Power Dissipation
Maximum Safe Operation Area
Maximum Channel Dissipation Curve
200
=
s
PW0 m
1
Pch (mW)
Main Characteristics
V DS = –10 V
–0.4
-0.3
-0.2
75 °C
Ta = –25 °C
25 °C
–0.1
–2.5 V
VGS = –2 V
0
–2
–4
–6
Drain to Source Voltage
0
–8
–10
V DS (V)
Drain to Source Saturation Voltage
V DS(on) (V)
–0.5
–0.4
–0.3
–0.2 A
–0.2
–0.1 A
I D = –0.05 A
–0.1
0
–4
–8
–12
Gate to Source Voltage
Rev.2.00, Apr.05.2004, page 3 of 5
–16
–20
V GS (V)
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Ta = 25 °C
50 Pulse Test
20
10
5
VGS = –4 V
2
–10 V
1
–0.01 –0.02
–0.05 –0.1 –0.2
Drain Current
–0.5
I D (A)
–1
Static Drain to Source on State Resistance
vs. Temperature
5
I D = –0.2 A
–0.05 A
–0.1 A
4
V GS = –4 V
3
I D = –0.2 A
2
–0.1 A
–0.05 A
VGS = –10 V
1
0
–40
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
2SJ399
1
0.5
Ta = –25 °C
0.2
25 °C
0.1
0.05
0.02
V DS = –10 V
Pulse Test
0.01
0
40
80
120
160
Case Temperature Tc (°C)
–0.01 –0.02
–0.05 –0.1 –0.2
10000
tf
5000
Coss
Switching Time t (ns)
Capacitance C (pF)
50
10
5
2
Ciss
1
0.5
0.2
0.1
VGS = 0
f = 1 MHz
Crss
–1
Switching Characteristics
100
20
–0.5
Drain Current I D (A)
Typical Capacitance vs.
Drain to Source Voltage
t d(off)
tr
2000
1000
t d(on)
500
200
VGS = –10 V
PW = 5 µs
100
0
–10
–20
–30
–40
–50
Drain to Source Voltage V DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.5
Reverse Drain Current I DR (A)
75 °C
Pulse Test
–0.4
–10 V
–0.3
V GS = 0
–0.2
–5 V
–0.1
0
–0.4
–0.8
–1.2
Source to Drain Voltage
Rev.2.00, Apr.05.2004, page 4 of 5
–1.6
–2.0
V SD (V)
–0.1
–0.2
–0.5
–1
–2
Drain Current I D (A)
–5
2SJ399
Package Dimensions
As of January, 2003
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
MPAK(T)
—
Conforms
0.011 g
Ordering Information
Part Name
Quantity
Shipping Container
2SJ399
3000 pcs
φ178 mm Taping Reel (TL)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Apr.05.2004, page 5 of 5
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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