ISC 2SA1125

Inchange Semiconductor
Product Specification
2SA1125
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2633
·High breakdown voltage
APPLICATIONS
·For audio frequency high voltage
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-50
mA
ICM
Collector current-peak
-100
mA
PC
Collector power dissipation
1.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1125
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1mA ,IB=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-30mA; IB=-3mA
ICBO
Collector cut-off current
IEBO
VCEsat
‹
CONDITIONS
B
MIN
TYP.
MAX
UNIT
-1.0
V
VCB=-100V; IE=0
-1
μA
Emitter cut-off current
VEB=-4V; IC=0
-1
μA
hFE
DC current gain
IC=-10mA ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-10mA ; VCE=-10V
hFE Classifications
Q
R
S
T
90-155
130-220
185-330
260-450
2
90
450
5
200
pF
MHz
Inchange Semiconductor
Product Specification
2SA1125
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3