AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Features • • • • • • Rev. V4 Functional Schematic High Linear Gain: 30 dB Typical High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ. 50 Ω Input/Output Broadband Matched Lead-Free Ceramic Bolt Down Package RoHS* Compliant and 260°C Reflow Compatible VDD N/C GND GND RFIN RFOUT GND VDET VGG N/C Description M/A-COM’s AM42-0040 is a three-stage MMIC power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. Pin Configuration Pin No. Pin Name Description 1 N/C No Connection 2 GND DC and RF Ground 3 RF In RF Input 4 GND DC and RF Ground 5 VGG Gate Supply 6 N/C No Connection 7 VDET Detector 8 RF Out RF Output 9 GND DC and RF Ground 10 VDD Drain Supply M/A-COM’s AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. Ordering Information Part Number Package AM42-0040 Ceramic Bolt Down Package * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Rev. V4 Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < -10 dBm dB 27 30 — Input VSWR PIN < -10 dBm Ratio — 2.3:1 2.7:1 Output VSWR PIN < -10 dBm Ratio — 3.0:1 — Output Power PIN = +10 dBm, IDD = 1050 mA Typ. dBm 31.7 33.0 34.5 Output Power vs. Frequency PIN = +10 dBm, IDD = 1050 mA Typ. dB — 1.0 1.5 Output Power vs. Temperature (with respect to TA = 25°C) PIN = +10 dBm, IDD = 1050 mA Typ. TA = -40°C to +70°C dB — ±0.4 — Drain Bias Current PIN = +10 dBm mA 900 1050 1100 Gate Bias Voltage PIN = +10 dBm, IDD = 1050 mA Typ. V -2.4 -1.2 -0.4 Gate Bias Current PIN = +10 dBm, IDD = 1050 mA Typ. mA — 5 20 Thermal Resistance 25°C Heat Sink °C/W — 5.6 — Second Harmonic PIN = +10 dBm, IDD = 1050 mA Typ. dBc — -35 — Third Harmonic PIN = +10 dBm, IDD = 1050 mA Typ. dBc — -45 — V 2 — — VDET Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum Input Power +23 dBm VDD +12 Volts VGG -3 Volts VDD - VGG +12 Volts IDD 1700 mA Channel Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Case Temperature (TC) = +25°C. Typical Bias Configuration4,5,6,7,8 4. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connection +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 5. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0040. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Rev. V4 Typical Performance Curves @ +25°C Linear Gain vs. Frequency Input and Output Return Loss vs. Frequency 40 0 30 -5 20 -10 10 -15 0 -20 -10 -25 -20 S11 S22 -30 -30 -35 -40 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 3.0 9.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Frequency (GHz) PAE vs. Frequency @ PIN = +10 dBm Output Power vs. Frequency @ PIN = +10 dBm 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 Frequency (GHz) Frequency (GHz) PAE vs. Input Power @ 6.15 GHz Output Power vs. Input Power @ 6.15 GHz 35 25 34 20 33 15 32 10 31 5 0 30 0 2 4 6 8 P (dBm) IN 10 12 14 0 2 4 6 8 10 12 14 P (dBm) IN 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0040 GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz Lead-Free CR-15† Rev. V4 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.