FAIRCHILD FDS4897C

FDS4897C
Dual N & P-Channel PowerTrench® MOSFET
General Description
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
•
Q1:
N-Channel
6.2A, 40V
RDS(on) = 29mΩ @ VGS = 10V
RDS(on) = 36mΩ @ VGS = 4.5V
•
Q2:
P-Channel
–4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V
Application
RDS(on) = 63mΩ @ VGS = –4.5V
•
Inverter
•
Power Supplies
•
High power handling capability in a widely used
surface mount package
•
RoHS compliant
DD2
DD2
D1
D
Q2
5
DD1
4
6
3
Q1
G2
S2 G
SO-8
Pin 1 SO-8
G1
S1 S
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
(Note 1a)
Q2
Units
V
V
40
40
±20
±20
6.2
20
–4.4
–20
A
2
1.6
1
0.9
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
1
Q1
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
PD
8
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
2
S
Absolute Maximum Ratings
Symbol
S
7
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4897C
FDS4897C
13”
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
November 2005
TA = 25°C unless otherwise noted
Symbol
Test Conditions
Parameter
Drain-Source Avalanche Ratings
EAS
IAS
Drain-Source Avalanche
Energy (Single Pulse)
Type Min Typ Max Units
(Note 3)
VDD = 40 V,
ID = 7.3 A, L = 1 mH
Q1
27
mJ
VDD = –40 V, ID =–8.7 A, L = 1 mH
Q2
Q1
Q2
38
mJ
A
Drain-Source Avalanche
Current
7.3
–8.7
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
ΔBVDSS
ΔTJ
IDSS
Breakdown Voltage
Temperature Coefficient
IGSS
Zero Gate Voltage Drain
Current
Gate-Body Leakage
On Characteristics
Q1
Q2
ID = 250 μA
VDS = VGS,
ID = –250 µA
VDS = VGS,
ID = 250 μA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V,
ID = 6.2 A
ID = 4.8 A
VGS = 4.5 V,
VGS = 10 V, ID = 6.2 A, TJ = 125°C
ID = –4.4 A
VGS = –10 V,
ID = –3.8 A
VGS = –4.5 V,
VGS = –10 V, ID = –4.4 A, TJ = 125°C
VDS = 10 V,
ID = 6.2 A
ID =–4.4 A
VDS = –10 V,
Q1
Q2
Q1
Q2
40
–40
Q1
Q2
V
34
–40
mV/°C
1
–1
±100
μA
1.9
–1.7
–5
4
3
–3
V
Q1
21
26
29
29
36
43
Q2
46
63
73
Q1
Q2
37
50
55
21
12
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
760
1050
100
140
60
70
1.2
9
Q1
Q2
All
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
ΔVGS(th)
ΔTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
gFS
ID = 250 μA
VGS = 0 V,
ID = –250 μA
VGS = 0 V,
ID = 250 μA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 32 V,
VGS = 0 V
VGS = 0 V
VDS = –32 V,
VDS = 0 V
VGS = ±20 V,
Static Drain-Source
On-Resistance
Forward Transconductance
1
–1
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
RG
Reverse Transfer
Capacitance
Gate Resistance
FDS4897C Rev C(W)
Q1
VDS = 20 V, VGS = 0 V, f = 1.0 MHz
Q2
VDS = –20 V, VGS = 0 V, f = 1.0 MHz
f = 1.0 MHz
pF
pF
pF
Ω
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
Symbol
Parameter
Switching Characteristics
td(on)
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
(Note 2)
Turn-On Delay Time
tr
Qgd
(continued)
Gate-Drain Charge
Q1
VDD = 20 V,
VGS = 10V,
ID = 1 A,
RGEN = 6 Ω
Q2
VDD = –20 V, ID = –1 A,
VGS = –10V, RGEN = 6 Ω
Q1
VDS = 20 V, ID = 6.2 A, VGS = 10 V
Q2
VDS = –20 V, ID = –4.4 A,VGS =–10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9
12
5
15
23
45
3
18
14
20
2.4
3
2.8
4
18
22
10
27
37
72
6
32
20
28
Q1
Q2
Q1
Q2
Q1
Q2
0.7
–0.7
17
24
7
12
1.2
–1.2
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics
VSD
trr
Qrr
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
Voltage
VGS = 0 V, IS = –1.3 A
Q1
Diode Reverse Recovery
IF = 6.2 A, diF/dt = 100 A/µs
Time
Q2
Diode Reverse Recovery
IF = –4.4 A, diF/dt = 100 A/µs
Charge
(Note 2)
(Note 2)
V
ns
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
3
20
4.0V
VGS = 3.0V
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
ID, DRAIN CURRENT (A)
16
6.0V
12
4.5V
8
3.0V
4
0
0.5
1
1.5
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
3.5V
1.4
4.0V
4.5V
6.0V
10V
1
2.5
0
Figure 1. On-Region Characteristics.
4
8
12
ID, DRAIN CURRENT (A)
16
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.07
ID = 7.0A
VGS = 10V
ID = 3.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.2
0.6
0
1.4
1.2
1
0.8
0.6
0.06
0.05
0.04
TA = 125oC
0.03
o
TA = 25 C
0.02
0.01
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 10V
ID, DRAIN CURRENT (A)
2.6
15
10
TA = 125oC
o
-55 C
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
25oC
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDS4897C Rev C(W)
3.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q1 (N-Channel)
1000
ID = 7A
f = 1 MHz
VGS = 0 V
VDS = 10V
800
8
30V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
4
Ciss
600
400
Coss
2
200
0
0
Crss
0
4
8
Qg, GATE CHARGE (nC)
12
0
16
Figure 7. Gate Charge Characteristics.
35
40
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100μs
10
1ms
10ms
100ms
1
1s
10s
DC
VGS = 10.0V
SINGLE PULSE
RθJA = 135oC/W
0.1
TA = 25oC
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
100
Figure 9. Maximum Safe Operating Area.
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
50
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
I(AS), AVALANCHE CURRENT (A)
I(pk), PEAK TRANSIENT CURRENT (A)
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
ID, DRAIN CURRENT (A)
5
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Single Pulse Maximum Peak
Current.
FDS4897C Rev C(W)
1000
o
TJ = 25 C
10
1
0.01
0.1
1
tAV, TIME IN AVANCHE(ms)
10
Figure 12. Unclamped Inductive Switching
Capability.
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q1 (N-Channel)
30
2.6
-6.0V
-4.5V
-ID, DRAIN CURRENT (A)
25
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -10V
-4.0V
20
15
-3.5V
10
-3.0V
5
0
2.4
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-6.0V
1.2
-10V
1
0.8
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On-Region Characteristics.
20
25
30
Figure 14. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
1.6
ID = -2.2A
ID = -4.4A
VGS = - 10V
1.5
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
-ID, DRAIN CURRENT (A)
1.4
1.3
1.2
1.1
1
0.9
0.8
0.12
0.1
TA = 125oC
0.08
0.06
TA = 25oC
0.04
0.7
0.6
0.02
-50
-25
0
25
50
75
100
125
150
2
4
o
Figure 15. On-Resistance Variation with
Temperature.
8
10
Figure 16. On-Resistance Variation with
Gate-to-Source Voltage.
25
TA = -55oC
-IS, REVERSE DRAIN CURRENT (A)
100
VDS = -10V
-ID, DRAIN CURRENT (A)
6
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
25oC
20
125oC
15
10
5
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics.
FDS4897C Rev C(W)
4.5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q2 (P-Channel)
1400
10
-VGS, GATE-SOURCE VOLTAGE (V)
ID = -4.4A
VDS = -10V
-20V
1200
CAPACITANCE (pF)
-30V
6
4
f = 1 MHz
VGS = 0 V
CISS
8
1000
800
600
400
COSS
2
200
CRSS
0
0
0
5
10
15
20
25
0
5
10
Qg, GATE CHARGE (nC)
Figure 19. Gate Charge Characteristics.
25
30
35
40
50
P(pk), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
20
Figure 20. Capacitance Characteristics.
100
100μ
RDS(ON) LIMIT
10
1ms
1s
10s
1
10ms
100ms
DC
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
0.1
TA = 25oC
0.01
0.1
1
10
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
Figure 21. Maximum Safe Operating Area.
10
100
1000
100
20
10
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 23. Single Pulse Maximum Peak
Current
1000
I(AS), AVALANCHE CURRENT (A)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
30
FDS4897C Rev C(W)
1
Figure 22. Single Pulse Maximum
Power Dissipation.
40
0
0.001
0.1
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
P(pk), PEAK TRANSIENT CURRENT (A)
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
o
TJ = 25 C
10
1
0.01
0.1
1
tAV, TIME IN AVANCHE(ms)
10
Figure 24. Unclamped Inductive Switching
Capability
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q2 (P-Channel)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 135 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics : N and P-Channel
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17