Technology ACE7400 N-Channel Enhancement Mode MOSFET Description The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • 30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application • • • • • • • Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Max Unit VDSS 30 V VGSS ±12 V TA=25℃ 2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.1 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 100 OC/W VER 1.2 1 Technology ACE7400 N-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE7400 XX + H Halogen - free Pb - free CM : SOT-323 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA 30 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA 0.8 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 VDS=24V, VGS=0V -1 VDS=24V, VGS=0V TJ=55℃ 10 Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) VDS≧4.5V, VGS=10V 6 VDS≧4.5V, VGS=-4.5V 4 1.6 V nA uA A VGS=10V, ID=2.8A 0.062 0.077 VGS=4.5V, ID=2.3A 0.070 0.085 VER 1.2 Ω 2 Technology ACE7400 N-Channel Enhancement Mode MOSFET VGS=2.5V, ID=1.5A 0.095 0.110 Forward Transconductance Gfs VDS=4.5V,ID=2.8A 4.6 S Diode Forward Voltage VSD IS=1.25A, VGS=0V 0.82 1.2 4.2 6 V Dynamic Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=-2.0A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss 350 Output Capacitance Coss Reverse Transfer Capacitance Crss 41 td(on) 2.5 Turn-On Time Turn-Off Time tr td(off) VDS=15V, VGS=0V, f=1MHz VDD=15V, RL=10Ω, VGEN=10V, RG=3Ω tf nC 0.6 pF 55 2.5 nS 20 4 Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) Transfer Characteristics VGS-Gate-to-Source Voltage (V) VER 1.2 3 Technology On-Resistance vs. Drain Current ID-Drain Current (A) Gate Charge Qg-Total Gate Charge (nC) Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V) ACE7400 N-Channel Enhancement Mode MOSFET Capacitance VDS-Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) On-Resistance vs. Gate-to-Source Voltage VGS-Gate-to-Source Voltage (V) VER 1.2 4 Technology ACE7400 N-Channel Enhancement Mode MOSFET Threshold Voltage TJ-Temperature(℃) Single Pulse Power Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot Square Wave Pulse Duration (sec) VER 1.2 5 Technology ACE7400 N-Channel Enhancement Mode MOSFET Packing Information SOT-323 VER 1.2 6 Technology ACE7400 N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7