ETC AD500-9

AD500-9 TO52S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency > 80 % at λ 760 - 910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
AD500-9 TO52S1
Active Area
0.196 mm2
Ø 500 µm
max. 5 nA
typ. 0.5 - 1 nA
45°
4
3
typ. 1.2 pF
120 … 300 V
typ. > 200 V
typ. 1.55 V/K
min. 55 A/W
typ. 60 A/W
1
ANODE
CATHODE
∅ 2.54
∅ 5.4 ± 0.2
∅ 4.7 ± 0.1
0.35 ± 0.2
∅ 2.0 min.
0.5 max.
typ. 2.5
∅ 3.0 ± 0.1
sensitive
surface
0.9 ± 0.3
typ. 0.5 GHz
typ. 550 ps
50 - 60
> 200
3.6 ± 0.2
typ. 1 pA/Hz1/2
-14
typ. 2* 10 W/Hz
-20 ... +70 °C
-60 ... +100 °C
∅ 0.45
1/2
Chip: AD500-9
diam. active area: 100 µm
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.
1
view without
window cap
3
4
www.silicon-sensor.com
Version: 05-04-29
Specification before: SSO-AD-500-9-TO52-S1
13 ± 1.0
typ. 0.2
0.4 max.
Cut-off Frequency
(-3dB)
Rise Time
Optimum Gain
Max. Gain
“Excess Noise” factor
(M = 100)
“Excess Noise” index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
CASE
2.7 ± 0.2
Dark Current 1)
(M = 100)
Total Capacitance 1)
(M = 100)
Breakdown Voltage UBR
(at ID = 2 µA)
Temperature Coefficient of UBR
Spectral Responsivity 1)
(at 905 nm, M = 100)
Package (TO52S1):
www.pacific-sensor.com
Spectral Responsivity at M = 1
Spectral Responsivity at M = 100
series - 9
0,700
7 0 ,0 0
0,600
6 0 ,0 0
0,500
5 0 ,0 0
Sabs (A/W)
Sabs (A/W)
series - 9
0,400
4 0 ,0 0
0,300
3 0 ,0 0
0,200
2 0 ,0 0
0,100
1 0 ,0 0
0 ,0 0
0,000
4 00
5 00
60 0
70 0
80 0
9 00
1 00 0
400
1 10 0
500
600
700
W av elength (nm)
800
900
1000
1100
W a v e le ng th (nm )
QE for M = 1
series - 9
100,0
90,0
80,0
70,0
QE
60,0
50,0
40,0
30,0
20,0
10,0
0,0
400
500
600
700
800
900
1000
1100
W a v e le ngth (nm)
ID = f(UR/UBR)
Gain = f(VR)
AD500-9
AD500-9
1000,0
10,000
1,000
0,100
M
Id [nA]
100,0
10,0
0,010
0,001
0,000
1,0
0,200
0,400
0,600
0,800
1,000
0
50
100
UR /UBR
200
250
Bias supply voltage
Maximum Ratings:
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
150
VR [ V]
100 mW at 22°C
200 mW for 1 s
IPh (DC) ≤ 250 µA
≤ 1 mA for signal 50 µs "on" / 1 ms "off"
Current limiting resistor
( Pelectr. = Popt. * Sabs * M * UR )
Application Hints:
APD
Current should be limited by a protecting resistor or current limiting - IC inside the
power supply.
Use of low noise read-out - IC.
For high gain applications bias voltage should be temperature compensated.
For low light level applications, blocking of ambient light should be used.
min. 0,1 µF,
closest to APD
Diode, protective circuit
Read-out circuit or
f.e. 50Ω Load resistance
Handling Precautions:
Soldering temperature
260 °C for max. 10 s. The device must be protected against solder flux vapour!
min. Pin - length
2 mm
ESD - protection
Standard precautionary measures are sufficient.
Storage
Store devices in conductive foam.
Avoid skin contact with window!
Clean window with Ethyl alcohol if necessary.
Do not scratch or abrade window.
Germany :
International Sales:
U.S.A. :
Silicon Sensor GmbH
Silicon Sensor GmbH
U.K. Office
35 Orchard Close
Stanstead Abbotts, Ware
Hertfordshire SG 12 8 AH
Phone/Fax: +44 (0)1920/87 20 90
E-Mail: pnsilsensuk@btconnect.com
p.nash@silicon-sensor.com
Pacific Silicon Sensor, Inc.
Ostendstr. 1
12459 Berlin
Germany
Phone: +49 (0)30-63 99 23 10
Fax:
+49 (0)30-63 99 23 33
E-Mail: sales@silicon-sensor.de
5700 Corsa Avenue #105
Westlake Village
CA 91362 USA
Phone: +1-818-706-3400
Fax:
+1-818-889-7053
E-Mail: : sales@pacific-sensor.com
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