t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, and reliability. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 130 W, it is ideally suited for today's RF power amplifier applications. 7 AGR09130EU 48 5 AGR09130EF Figure 1. Available Packages Features Typical performance ratings are for the EDGE format: 3GPP GSM 05.05: — Output power (POUT): 50 W. — Power gain: 17.8 dB. — Modulation spectrum: @ ±400 kHz = –60 dBc. @ ±600 kHz = –72 dBc. — Error vector magnitude (EVM) = 1.8%. — Return loss: –10 dB. High-reliability, gold-metalization process. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. P1dB of 130 W minimum output power. Parameter Thermal Resistance, Junction to Case: AGR09130EU AGR09130EF Sym R JC Value Unit 0.5 0.5 °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09130EU AGR09130EF Derate Above 25 C: AGR09130EU AGR09130EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, 15 ID 15 PD TJ Unit Vdc Vdc Adc 350 350 W 2.0 2.0 200 W/°C TSTG –65, 150 °C °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09130E Minimum (V) Class HBM MM CDM 500 50 1500 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol Min Typ Max Off Characteristics 200 µA) Drain-source Breakdown Voltage (VGS = 0, ID = 400 Unit V(BR)DSS 65 — — Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS — — µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS — — 4 200 12 Forward Transconductance (VDS = 10 V, ID = 1 A) GFS — 9 — S µAdc On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) VGS(TH) — — 4.8 Vdc Gate Quiescent Voltage (VDS = 26 V, IDQ = 1000 mA) VGS(Q) — 3.8 — Vdc Drain-source On-voltage (VGS = 10 V, ID = 1 A) VDS(ON) — 0.08 — Vdc Symbol Min Typ Max Unit Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS — 72 — pF Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) CRSS — 3.0 — pF Table 5. RF Characteristics Parameter Dynamic Characteristics Test Fixture) Functional Tests (in Supplied Agere Systems Supplied Test Fixture) (Test frequencies (f) = 920 MHz, 940 MHz, 960 MHz) Linear Power Gain (VDS = 26 V, POUT = 50 W, IDQ = 1000 mA) Output Power (VDS = 26 V, 1 dB compression, IDQ = 1000 mA) GL 16 18 — dB P1dB 130 150 — W — 55 — % IM3 — 30 — dBc VSWRI — 2:1 — — Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 1000 mA) Third-order Intermodulation Distortion (100 kHz spacing, VDS = 26 V, POUT = 120 WPEP, IDQ = 1000 mA) Input VSWR Ruggedness (VDS = 26 V, POUT = 130 W, IDQ = 1000 mA, f = 940 MHz, VSWR = 5:1, all angles) — No degradation in output power. Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09130E VGG R4 R3 R3 FB2 FB1 C23 C24 C25 VDD C29 C12 R2 C11 C10 C9 C8 Z16 Z11 Z17 C13 R1 Z1 RF INPUT C1 Z2 C2 Z3 Z4 C3 Z5 Z6 Z7 Z8 Z12 Z13 C15 C14 Z10 C17 C19 C26 C20 C28 C21 C22 C27 Z9 2 1 3 C4 C7 C5 DUT Z14 C16 Z15 RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE C6 A. Schematic 2 3 1 MHz Parts List: Microstrip line: Z1 0.834 in. x 0.066 in.; Z2 0.066 in. x 0.066 in.; Z3 0.290 in. x 0.066 in.; Z4 0.050 in. x 0.180 in.; Z5 0.650 in. x 0.180 in.; Z6 0.050 in. x 0.800 in.; Z7 0.132 in. x 0.800 in.; Z8 0.105 in. x 0.800 in.; Z9 0.050 in. x 0.800 in.; Z10 0.423 in. x 0.700 in.; Z11 0.227 in. x 0.700 in.; Z12 0.920 in. x 0.180 in.; Z13 0.040 in. x 0.180 in.; Z14 0.470 in. x 0.066 in.; Z15 0.495 in. x 0.066 in.; Z16 1.340 in. x 0.050 in.: Z17 1.100 in. x 0.050 in. AT C ® chip capacitor: C1, C8, C16, C17: 47 pF 100B470JW; C3 1.5 pF 100B1R5BW; C4: 6.8 pF 100B6R8BW; C13, C14: 12 pF 100B120JW; C5, C6, 10 pF 100B100JW; C7 5.6 pF 100B5R6BW; C9: 100 pF 100B101JW. 0603 chip capacitor: C10, C19: 220 pF. K emet®: chip capacitor, C11, C26: 0.01 µF C1206C103KRAC7800; C12, C20, C23, C28, C29: 0.1 µF C1206C104KRAC7800. J ohans on G iga-Trim® variable capacitor, 27291SL: C2, C15: 0.8 pF to 8 pF. S prague ® tantalum chip capacitor (35 V): C21, C24, C25, C27 10 µF; C22 22 µF. 1206 size fixed film chip resistor (0.25 W): R1: 51 RM73B2B510J; R2 56 k RM73B2B563J; R3 12 RM73B2B120J; R4 1.2 k RM73B2B122J; R5 RM73B2B4R3J 4.3 . K reger ® ferrite bead: FB1 2743019447; FB2 2743021447. Taconic ® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR09130E Test Circuit Typical Performance Characteristics 0.11 07 0. 0 45 1.0 0.9 0.8 55 0.4 EN 75 T (+ j X/ Z 5 0.4 0.2 PO N 0.6 CE CO M RE AC TA N 0.8 0 1. f1 0 1. U CT IVE IN D 85 80 15 0 4 6 ZL 0.1 0.4 1.8 2.0 1.4 1.6 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.2 0.1 0.2 0.3 0.0 0.4 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 GEN ERA 0.48 ± 180 TO 170 RÐ 0.4 > 7 1 60 90 70 0.6 0.2 A D <Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 0.2 f3 o) jB/ Y E (NC ZS 0.6 f1 8 0. 0 0.2 TA -85 0.48 0.4 1. RD L O TOW A 7 TH S -170 EN G V EL A W -90 -160 0.49 40 8 920 (f1) 940 960 (f3) Yo) jB/ E (+ NC f3 0.1 MHz (f) R TA EP SC SU 0.15 0.35 80 0.3 Z0 = 5 Ω ,O o) T CI PA CA E IV 90 0. 0.0 4 0. 5 14 0 70 0. 06 0. 44 13 5 65 0. 43 0. 110 0.14 0.36 1.4 0 12 0.6 60 2 0.4 0.37 0.7 1 0.4 8 0.13 0.38 50 0.4 9 0.0 0.0 0.39 100 0.12 1.2 0.1 ZL Ω ZS Ω (Complex Source Impedance) (Complex Optimum Load Impedance) 0.9 + j0.96 0.55 – j1.06 0.89 + j1.09 0.55 – j0.77 0.84 + j1.35 0.58 – j0.66 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 35 Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 940 MHz 180 POWER OUT (POUT) (W)Z 200 160 960 MHz 140 180 POUT 160 140 920 MHz 120 100 80 PIN 120 100 960 MHz 80 60 60 40 920 MHz 20 0 0.00 0.50 1.00 1.50 2.00 2.50 40 940 MHz 3.00 DRAIN EFFICIENCY (Eff) (%)Z 200 20 0 4.00 3.50 INPUT POWER (PIN) (W)Z VDD = 26 V, IDQ = 1.0 A, TF = 30 °C, FORMAT = CW. Figure 4. POUT and Drain Efficiency vs. PIN POWER GAIN (PG) (dB)Z 18.5 -2 PG @ POUT = 50 W -4 18 PG @ POUT = 130 W 17.5 -6 -8 17 -10 16.5 RL 16 -12 15.5 -14 15 -16 14.5 -18 14 920 925 930 935 940 945 950 955 FREQUENCY (MHz)Z VDD = 26 V, IDQ = 1.0 A, TF = 30 °C. Figure 5. Power Gain and Return Loss vs. Frequency -20 960 INPUT RETURN LOSS (RL) (dB)Z 0 19 Typical Performance Characteristics (continued) 100 19 PG 17 960 MHz 16 80 920 MHz 940 MHz 15 90 70 60 Eff 14 50 13 960 MHz 12 40 920 MHz 940 MHz 30 11 20 10 10 200 0 50 100 POWER OUT (POUT) (W)Z 150 DRAIN EFFICIENCY (Eff) (%)Z POWER GAIN (PG) (dB)Z 18 VDD = 26 VDC, IDQ = 1.0 A, TF = 30 °C, FORMAT = CW. Figure 6. Power Gain and Drain Efficiency vs. Power Out MODULATION SPECTRUM (dBc)Z -10 Eff 35 -20 30 -30 25 PG -40 20 15 -50 +/- 400 kHz -60 +/- 600 kHz -70 -80 920 10 925 930 935 940 945 950 5 955 POWER GAIN (dB) AND DRAIN EFFICIENCY (%)Z 40 0 0 960 FREQUENCY (MHz)Z VDD = 26 V, IDQ = 1.0 A, PO = 50 W, TF = 30 °C, EDGE FORMAT = 3GPP GSM 05.05. Figure 7. ACP, Power Gain, and Efficiency vs. Frequency Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) MODULATION SPECTRUM (dBc)Z 0 -10 -20 -30 -40 -50 +/-400 kHz -60 -70 -80 -90 +/-600 kHz 35 37 39 41 43 45 POWER OUT (POUT) (dBm)Z 47 49 FREQUENCY = 940 MHz, VDD = 26 VDC, IDQ = 1.0 A, TF = 30 °C, EDGE FORMAT = 3GPP GSM 05.05. Figure 8. EDGE Modulation Spectrum vs. Power Out 6 960 MHz 5 EVM (%)Z 4 3 940 MHz 920 MHz 2 1 0 35.00 37.00 39.00 41.00 43.00 45.00 47.00 49.00 POWER OUT (POUT) (dBm)Z VDD = 26 VDC, IDQ = 1.0 A, TF = 30 °C, EDGE FORMAT = 3GPP GSM 05.05 Figure 9. EVM vs. Power Out Typical Performance Characteristics (continued) 0.00 -10.00 IMD dBcZ -20.00 IM3+/- -30.00 -40.00 -50.00 IM5+/IM7+/- -60.00 -70.00 0.00 50.00 100.00 150.00 POWER OUT (POUT) WPEPZ 200.00 F1 = 940.0 MHz, F2 = 940.1 MHz, VDD = 26 V, IDQ = 1.0 A, TF = 30 °C. Figure 10. 2-Tone IMD vs. Po Draft Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET AGR09130E 130 W, 921 MHz—960 MHz, N-Chann el E-Mode, Latera l MOSFET Package Di mensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR09130EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 AGERE PEAK DEVICES M-AGR21125U AGR09130EU 3 YYWWUR XXXX XXXXZZ Z 2 AGR09130EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 AGERE PEAK DEVICES M-AGR21125F AGR09130EF 3 YYWWUR XXXX ZZZZZZZ 2 Marking Notes: Line 1: Brand & Manufacturer Line 2: Part Number Line 3: 4 digit Trace Code first two digits are letters followed by two digit number AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MO SFET Ordering Information Devi ce Code Package Availability AGR09130E AGR09130EU (surface-mount) Tray AGR09130EF (flanged) Tray Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation. ATC is a registered trademark of American Technical Ceramics Corporation. Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Kreger is a registered trademark of Kreger Components, Inc. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. December 2005 Rev B