AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 90 W, it is ideally suited for today's wireless base station RF power amplifier applications. Figure 1. AGR09090EF (Flanged) Package GSM Features Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 40 W): — Modulation spectrum: @ ±400 kHz = –60 dBc. @ ±600 kHz = –72 dBc. — Error vector magnitude (EVM) = 2.3%. Typical performance over entire GSM band: — P1dB: 105 W typical. — Power gain: @ P1dB = 17.8 dB. — Efficiency @ P1dB = 60% typical. — Return loss: –10 dB. Cellular Features Typical performance ratings (f = 880 MHz, POUT = 40 W): — Modulation spectrum: @ ±400 kHz = –60 dBc. @ ±600 kHz = –72 dBc. — Error vector magnitude (EVM) = 2.3%. Typical performance over entire GSM band: — P1dB: 105 W typical. — Power gain: @ P1dB = 17.6 dB. — Efficiency @ P1dB = 60% typical. — Return loss: –10 dB. GSM/Cellular Features High-reliability, gold-metalization process. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 90 W minimum output power. Table 1. Thermal Characteristics (921 MHz—960 MHz, and 865 MHz—895 MHz) Parameter Thermal Resistance, Junction to Case: AGR09090EF Sym Value Unit R JC 0.80 °C/W Table 2. Absolute Maximum Ratings* (921 MHz—960 MHz, and 865 MHz—895 MHz) Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09090EF Derate Above 25 C: AGR09090EF Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS –0.5, +15 8.5 ID Unit Vdc Vdc Adc PD 219 W — TJ 1.25 200 W/°C °C TSTG –65, +150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* (921 MHz—960 MHz, and 865 MHz—895 MHz) AGR09090EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics (921 MHz—960 MHz, 865 MHz—895 MHz) Parameter Off Characteristics 200 µA) Drain-source Breakdown Voltage (VGS = 0, ID = 300 Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS — — µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) IDSS — — 2.6 150 8 GFS — 6 — S µAdc On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) VGS(TH) — — 4.8 Vdc Gate Quiescent Voltage (VDS = 26 V, IDQ = 700 mA) VGS(Q) — 3.6 — Vdc Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) VDS(ON) — 0.12 — Vdc Symbol Min Typ Max Unit Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) COSS — 48 — pF Reverse Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) CRSS — 2.3 — pF 17 17.8 — dB 50 60 — % Table 5. RF Characteristics (921 MHz—960 MHz) Parameter Dynamic Characteristics Test Fixture) Functional Tests (in Supplied Agere Systems Supplied Test Fixture)1 Power Gain (VDS = 26 V, POUT = 50 W, IDQ = 700 mA) GL Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 700 mA) EDGE Linearity Characterization2 (POUT = 40 W, f = 941 MHz, VDS = 26 V, IDQ = 700 mA) Modulation Spectrum @ ±400 kHz — — –60 — dBc Modulation Spectrum @ ±600 kHz — — –72 — dBc P1dB 90 105 — W — –10 — dB Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 700 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles) 1. Across full GSM band, 921 MHz—960 MHz. 2. Measured according to 3GPP GSM 05.05. RL No degradation in output power. Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics (continued) Table 6. RF Characteristics (865 MHz—895 MHz) Parameter Symbol Min Typ Max Unit Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) COSS — 48 — pF Reverse Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) CRSS — 2.3 — pF — 17.6 — dB — 60 — % — — –60 — dBc Dynamic Characteristics Functional Tests (in Agere Systems Supplied Test Fixture)1 Power Gain (VDS = 26 V, POUT = 50 W, IDQ = 700 mA) GL Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 700 mA) EDGE Linearity Characterization2 (POUT = 40 W, f = 880 MHz, VDS = 26 V, IDQ = 700 mA) Modulation Spectrum @ ±400 kHz Modulation Spectrum @ ±600 kHz Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 700 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles) 1. Across full cellular band, 865 MHz—895 MHz. 2. Measured according to 3GPP GSM 05.05. Agere Systems Inc. — — –72 — dBc P1dB — 105 — W RL — –10 — dB No degradation in output power. AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09090EF, 921 MHz—960 MHz Z17 VDD C16 C17 C18 C19 C20 VGG R2 Z15 FB1 Z16 Z18 Z19 Z20 Z21 C15 Z22 RF OUTPUT C10 C22 C9 C8 C7 Z6 C6 C13 Z14 R1 C21 C14 Z13 C23 Z12 C12 Z11 C11 2 RF INPUT Z23 Z1 Z24 C1 Z2 Z3 Z4 C2 Z5 Z7 Z8 C3 Z9 C4 Z10 PINS: 1. DRAIN 2. GATE 3. SOURCE 1 DUT 3 C5 A. Schematic, 921 MHz—960 MHz Parts List: Microstrip line: Z1 0.035 in. x 0.066 in.; Z2 0.120 in. x 0.066 in.; Z3 0.475 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.129 in. x 0.100 in.; Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.; Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.; Z17 1.916 in. x 0.050 in.; Z18 0.734 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.086 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.; Z22 0.208 in. x 0.066 in.; Z23 0.278 in. x 0.066 in.; Z24 0.305 x 0.050 ATC ® chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2: 2.7 pF 100B2R7JW500X; C3: 2.0 pF 100B2R0CW C4, C5, C11, C12: 12 pF 100B120JW500X; C7: 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14: 4.7 pF 100B4R7CW; C17: 10 pF 100B100JW500X; C23: 8.2 pF 100A8R2CW. Sprague® tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V; C22 22 µF, 35 V. Murata ® 0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL. Kemet® 1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800. 1206 size chip resistor: R1 51 RM73B2B510, R2 1 k RM73B2B130. Kreger® ferrite bead: FB1 2743D19447. ® Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout, 921 MHz—960 MHz Figure 2. AGR09090EF Test Circuit, 921 MHz—960 MHz AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09090EF, 865 MHz—895 MHz Z17 VDD C16 C17 C18 C19 C20 VGG R2 Z15 FB1 Z16 Z18 Z19 Z20 Z21 C15 Z22 RF OUTPUT C10 C9 C22 C8 C7 Z6 C6 C13 Z14 R1 C21 C14 Z13 Z12 C12 Z11 C11 2 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 C2 Z7 Z8 C3 Z9 C4 Z10 PINS: 1. DRAIN 2. GATE 3. SOURCE 1 DUT 3 C5 A. Schematic, 865 MHz—895 MHz Parts List: Microstrip line: Z1 0.193 in. x 0.066 in.; Z2 0.321 in. x 0.066 in.; Z3 0.179 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.425 in. x 0.100 in.; Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.; Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.; Z17 1.916 in. x 0.050 in.; Z18 0.656 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.114 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.; Z22 0.208 in. x 0.066 in. ATC ® chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.7 pF 100B2R7JW500X; C3, C17, 10 pF 100B100JW500X; C4, C5, C11, C12: 12 pF 100B120JW500X; C7, 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14, 4.7 pF 100B4R7JW500X. Sprague ® tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V; C22 22 µF, 35 V. Kemet® 1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800. Murata ® 0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL. 1206 size chip resistor: R1 51 RM73B2B510, R2 1 k RM73B2B130. Kreger® ferrite bead: FB1 2743D19447. ® Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout, 865 MHz—895 MHz Figure 3. AGR09090EF Test Circuit, 865 MHz—895 MHz AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET U CT 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.6 1.4 1.2 1.8 50 1.0 0.9 0.7 0.8 0.6 0.5 0.4 0.3 0.2 0.1 f1 0.2 0.1 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.2 20 0.4 ) / Yo (-jB CE 1. 0 I CT V 0 1.0 5 0.14 -80 0.11 -100 -90 0.12 0.13 0.38 0.37 0.1 9 0.0 DU IN ,O o) R -75 40 -1 06 -70 5 0. 5 0. 07 30 -1 43 0. 8 0.0 2 0.4 .41 0 0.4 0.39 F 0.36 -110 0 -12 (-j 0. 2. 1.8 1.6 0.15 0.35 0.9 1.2 1.4 0.7 0 -4 -4 4 -70 0 6 -5 5 -3 0.1 0.3 0.8 3 -60 5 0.3 7 -5 0.1 VE -60 32 CA P AC I TI 0.6 0.2 -30 CE CO M -65 18 0. RE AC TA N T 4 Z X/ 0. EN 4 0. 0 -5 -25 31 0. 19 0. PO N -85 AN PT CE US ES 0.4 0.0 0.6 0 -20 5 0.8 3. 0.3 0.4 0 1. 0.2 0 0 4.0 f1 -4 .4 -15 ZS 0.2 8 0.3 0.2 2 f3 0.2 9 0.2 1 -30 6 0.4 4 0.0 0 -15 -80 8 0. -20 0.2 5.0 0.48 10 0.6 -10 0.49 0.6 90 IN D 0. 8 10 ZL D L OA D < OW A R 7 HST 0.4 N GT -170 EL E V WA <Ð -90 -160 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES f3 0.1 Z0 = 4 Ω L E OF ANG 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 Typical Performance Characteristics MHz (f) 921 (f1) 940.5 960 (f3) ZS Ω (Complex Source Impedance) 0.731 – j1.676 0.869 – j1.611 0.912 – j1.569 GATE (2) ZS ZL Ω (Complex Optimum Load Impedance) 1.478 + j0.538 1.393 + j0.657 1.300 + j0.761 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 4. Series Equivalent Input and Output Impedances, 921 MHz—960 MHz AGR09090EF 90 W, 865 MHz —960 MHz, N-Channel E-Mode, Lateral MOSFET U CT 0.6 90 IN D 0. 8 0.1 0.4 ZL 20 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 50 1.0 0.9 0.8 f1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 f3 0.2 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) D L OA D < OW A R 7 HST 0.4 N GT -170 EL E V WA <Ð -90 -160 0.2 20 ) / Yo (-jB CE 1. 0 IV CT IN DU R 0 2. 5 0.11 -100 -90 0.12 0.13 0.38 0.37 0.1 9 0.0 40 -1 06 -70 0. 07 30 -1 43 0. 8 0.0 2 0.4 0.4 1 0.4 0.39 F 0.36 -110 0 -65 .5 1.8 1.6 1.4 1.2 1.0 -4 0.14 -80 0.35 0.9 0 -4 0.15 0 -70 -5 6 4 0 -12 (-j 5 ,O o) 0.7 0.1 0.3 0.8 35 5 3 -60 -5 0.3 7 VE -60 0.1 CA P AC I TI CE CO M 0.6 -30 32 RE AC TA N T 0.0 Z X/ 18 0. 0.2 EN 0. 0 -5 -25 PO N 4 0. 0.4 0. -75 0.6 0 -20 31 0. 19 0. 4 0.8 -85 AN PT CE US ES 4.0 3. 0.3 5 0.4 0 1. -15 4 0.0 0 -15 -80 5.0 0.2 0 -4 4 0. 0.2 8 f1 0.2 2 0.4 8 0. -10 0.48 0.6 ZS 0.2 9 0.2 1 -30 0.3 10 0.2 0.4 f3 -20 6 50 0.49 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES 10 0.1 Z0 = 4 Ω L E OF ANG 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 Typical Performance Characteristics (continued) MHz (f) 865 (f1) 880 895 (f3) ZS Ω (Complex Source Impedance) 0.524 – j0.947 0.516 – j0.835 0.477 – j0.738 GATE (2) ZS ZL Ω (Complex Optimum Load Impedance) 1.654 – j0.066 1.656 – j0.006 1.639 + j0.043 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 5. Series Equivalent Input and Output Impedances, 865 MHz—895 MHz AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 19.0 IDQ = 1000 mA IDQ = 1100 mA 18.5 POWER GAIN (dB)Z 18.0 17.5 IDQ = 900 mA 17.0 IDQ = 800 mA IDQ = 700 mA 16.5 16.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 940.5 MHz. Figure 6. Power Gain vs. POUT, 921 MHz—960 MHz TYPICAL DATA -30.0 3.5 3.0 MODULATION SPECTRUM (dBc)Z +/- 400 kHz -50.0 2.5 -60.0 2.0 -70.0 1.5 -80.0 1.0 +/- 600 kHz -90.0 0.5 EVM -100.0 0.0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 POUT (dBm)Z Test Conditions: VDD = 26 V, FREQUENCY = 940.5 MHz, IDQ = 700 mA. RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05. Figure 7. Modulation Spectrum and EVM vs. POUT, 921 MHz—960 MHz 47 ERROR VECTOR MODULATION (%)Z -40.0 AGR09090EF W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 70 65 IDQ = 800 mA 60 55 EFFICIENCY (%)Z 50 45 40 35 30 25 IDQ = 1100 mA 20 15 10 5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 940.5 MHz. Figure 8. Efficiency vs. POUT, 921 MHz—960 MHz TYPICAL DATA -58 57 54 +/- 400 kHz -60 51 -61 48 -62 45 -63 42 -64 39 -65 36 -66 33 EFFICIENCY -67 30 -68 27 GAIN -69 24 -70 21 -71 18 -72 15 -73 12 -74 9 +/- 600 kHz -75 6 -76 920 GAIN (dB) AND EFFICIENCY (%)Z MODULATION SPECTRUM (dBc)Z -59 3 925 930 935 940 945 950 955 960 FREQUENCY (MHz)Z Test Conditions: VDD = 26 V, EDGE FORMAT, IDQ = 700 mA, POUT = 40 W. Figure 9. Modulation Spectrum, Gain, and Efficiency vs. Frequency, 921 MHz—960 MHz AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 18.5 PG @ POUT = 59 W -8 17.5 -10 17.0 -12 16.5 -14 16.0 -16 PG @ POUT = 114 W 15.5 -18 RETURN LOSS 15.0 -20 14.5 -22 14.0 -24 13.5 RETURN LOSS (dB)Z POWER GAIN (dB)Z 18.0 -6 -26 920 925 930 935 940 945 950 955 960 FREQUENCY (MHz)Z Test Conditions: VDD = 26 V. Figure 10. Power Gain and Return Loss vs. Frequency, 921 MHz—960 MHz TYPICAL DATA 140 130 95 POUT @ 940.5 MHz POUT @ 921 MHz 120 90 110 85 100 80 POUT @ 960 MHz 75 EFFICIENCY @ 960 MHz 80 70 EFFICIENCY @ 940.5 MHz 70 65 60 60 50 55 40 50 30 45 20 40 EFFICIENCY @ 921 MHz 10 35 0 30 0.5 1.0 1.5 PIN (W)Z 2.0 2.5 Test Conditions: VDD = 26 V. Figure 11. Power Out and Efficiency vs. Input Power, 921 MHz—960 MHz 3.0 EFFICIENCY (%)Z 90 POUT (W)Z 100 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 19.0 IDQ = 1000 mA 18.5 IDQ = 900 mA POWER GAIN (dB)Z 18.0 17.5 IDQ = 800 mA 17.0 IDQ = 700 mA IDQ = 600 mA 16.5 16.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 880 MHz. Figure 12. Power Gain vs. POUT, 865 MHz—895 MHz 3.5 -40 3.0 -50 2.5 +/- 400 kHz -60 2.0 -70 1.5 -80 1.0 +/- 600 kHz EVM -90 0.5 -100 0.0 27 28 29 30 31 32 33 34 35 36 37 38 POUT (dBm) 39 40 41 42 43 44 45 46 Test Conditions: VDD = 26 V, FREQUENCY = 880 MHz, IDQ = 700 mA. RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05. Figure 13. Modulation Spectrum and EVM vs. POUT, 865 MHz—895 MHz 47 ERROR VECTOR MODULATION (%)Z MODULATION SPECTRUM (dBc)Z TYPICAL DATA -30 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 70 65 60 55 EFFICIENCY (%)Z 50 45 IDQ = 700 mA 40 35 30 25 20 IDQ = 1000 mA 15 10 5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 880 MHz. Figure 14. Efficiency vs. POUT, 865 MHz—895 MHz TYPICAL DATA -56 60 MODULATION SPECTRUM (dBc)Z 57 +/- 400 kHz -58 54 -59 51 -60 48 -61 45 -62 42 -63 39 -64 36 EFFICIENCY -65 33 -66 30 -67 27 -68 24 GAIN -69 21 -70 18 -71 15 -72 12 -73 9 -74 6 +/- 600 kHz -75 3 -76 865 GAIN (dB) AND EFFICIENCY (%)Z -57 0 870 875 880 FREQUENCY (MHz)Z 885 890 895 Test Conditions: VDD = 26 V, EDGE FORMAT, IDQ = 700 mA, POUT = 40 W. Figure 15. Modulation Spectrum, Gain, and Efficiency vs. Frequency, 865 MHz—895 MHz AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 18.5 0 PG @ POUT = 59 W 18.0 -3 17.5 -6 -9 PG @ POUT = 109 W 16.5 -12 16.0 -15 15.5 -18 15.0 RETURN LOSS (dB)Z POWER GAIN (dB)Z 17.0 -21 RETURN LOSS 14.5 -24 14.0 -27 13.5 -30 865 870 875 880 885 890 895 FREQUENCY (MHz)Z Test Conditions: VDD = 26 V. Figure 16. Power Gain and Return Loss vs. Frequency, 865 MHz—895 MHz TYPICAL DATA 140.0 100 POUT @ 865 MHz 130.0 95 POUT @ 880 MHz 120.0 90 POUT @ 895 MHz 85 100.0 80 90.0 75 80.0 70 70.0 65 60.0 60 50.0 55 EFFICIENCY @ 880 MHz 40.0 30.0 EFFICIENCY @ 865 MHz 50 45 EFFICIENCY @ 895 MHz 20.0 40 10.0 35 0.0 30 0.5 1.0 1.5 2.0 2.5 PIN (W)Z Test Conditions: VDD = 26 V. Figure 17. Power Out and Efficiency vs. Input Power, 865 MHz—895 MHz 3.0 EFFICIENCY (%)Z POUT (W)Z 110.0 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 18.5 0 PG @ POUT = 59 W 18.0 -3 17.5 -6 -9 PG @ POUT = 109 W 16.5 -12 16.0 -15 15.5 -18 15.0 RETURN LOSS (dB)Z POWER GAIN (dB)Z 17.0 -21 RETURN LOSS 14.5 -24 14.0 -27 13.5 -30 865 870 875 880 885 890 895 FREQUENCY (MHz)Z Test Conditions: VDD = 26 V. Figure 16. Power Gain and Return Loss vs. Frequency, 865 MHz—895 MHz TYPICAL DATA 140.0 100 POUT @ 865 MHz 130.0 95 POUT @ 880 MHz 120.0 90 POUT @ 895 MHz 85 100.0 80 90.0 75 80.0 70 70.0 65 60.0 60 50.0 55 EFFICIENCY @ 880 MHz 40.0 30.0 EFFICIENCY @ 865 MHz 50 45 EFFICIENCY @ 895 MHz 20.0 40 10.0 35 0.0 30 0.5 1.0 1.5 2.0 2.5 PIN (W)Z Test Conditions: VDD = 26 V. Figure 17. Power Out and Efficiency vs. Input Power, 865 MHz—895 MHz 3.0 EFFICIENCY (%)Z POUT (W)Z 110.0