VISHAY SI9979

Si9979
Vishay Siliconix
3-Phase Brushless DC Motor Controller
FEATURES
D Hall-Effect Commutation
D 60_ or 120_ Sensor Spacing
D Integral High-Side Drive for all N-Channel MOSFET
Bridges
D PWM Input
D
D
D
D
D
Quadrature Selection
Tachometer Output
Reversible
Braking
Output Enable Control
Cross Conduction Protection
Current Limiting
Undervoltage Lockout
Internal Pull-Up Resistors
D
D
D
D
DESCRIPTION
The Si9979 is a monolithic brushless dc motor controller with
integral high-side drive circuitry. The Si9979 is configured to
allow either 60_or 120_ commutation sensor spacing. The
internal low-voltage regulator allows operation over a wide
input voltage range, 20- to 40-V dc.
quadrature select, and braking inputs are included for control
along with a tachometer output. Protection features include
cross conduction protection, current limiting, and undervoltage
lockout. The FAULT output indicates when undervoltage, over
current, disable, or invalid sensor shutdown has occurred.
The Si9979 provides commutation from Hall-effect sensors.
The integral high-side drive, which utilizes combination
bootstrap/charge pump supplies, allows implementation of an
all n-channel MOSFET 3-phase bridge. PWM, direction,
The Si9979 is available in both standard and lead (Pb)-free
48-pin SQFP packages and is specified to operate over the
commercial temperature range of 0 to 70_C (C suffix), and the
industrial temperature range of −40 to 85_C (D suffix).
FUNCTIONAL BLOCK DIAGRAM
V+
Bootstrap Reg.
42
Low-Voltage
Regulator
VDD
43
VDD
VREF
Charge Pump
CAPA CAPB CAPC
INB
INC
60/120
EN
F/R
QS
PWM
BRK
TACH
FAULT
34
35
High-Side
U.V. Lockout
Bootstrap Reg.
Charge Pump
Low-Side
U.V. Lockout
INA
36
32
30
31
1
VDD
2
VDD
Bootstrap Reg.
3
VDD
Charge Pump
4
VDD
5
VREF
6
VREF
7
VREF
8
VREF
9
VREF
Input
Logic
VDD
28
26
27
33
29
10
25
11
13-16, 21-24
37-41, 44-48
RT
RT/CT
18
17
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
One Shot
−
+
20
19
CAPA
GTA
SA
CAPB
GTB
SB
CAPC
GTC
SC
GBA
GBB
GBC
GND
IS−
IS+
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Si9979
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltage on Pin 42 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Voltage on Pins 1−4, 10, 11 . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD + 0.3 V
Voltage on Pins 5−9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 5.5 V
Voltage on Pins 26, 28, 30, 32, 34, 36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Voltage on Pins 27, 31, 35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2 to 50 V
Operating Temperature
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C
D Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C
Power Dissipation (PD)
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70 W
D Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55 W
RECOMMENDED OPERATING RANGE
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20 to 40 VDC
RT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 kW Min
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
Limits
V+ = 20 to 40 V, IDD = 0 mA
Mina
−20 mA v IDD v 0 mA
14.5
Typb
Maxa
16
17.5
Unit
Power
Supply Voltage Range
V+
Logic Voltage
VDD
Supply Current
Logic Current
Internal Referenced
20
I+
40
4.5
IDD
mA
−20
VREF
V
4.2
V
Commutation Inputs (INA, INB, INC, 60/120)
High-State
VIH
Low-State
VIL
4.0
High-State Input Current
IIH
VIH = VDD
Low-State Input Current
IIL
VIL = 0 V
1.0
10
−50
V
mA
Logic Inputs (F/R, EN, QS, PWM, BRK)
High-State
VIH
Low-State
VIL
2.0
High-State Input Current
IIH
VIH = 5.5 V
Low-State Input Current
IIL
VIL = 0 V
0.8
10
−125
V
mA
Outputs
Low-Side Gate Drive, High State
VGBH
Low-Side Gate Drive, Low State
VGBL
High Side Gate Drive,
High-Side
Drive High State
VGTH
High-Side Gate Drive, Low State
VGTL
Capacitor Voltaged
VCAP
14
16
0.1
TA = 0 to 70_C
C Suffix
16
18
TA = −40 to 85_C
D Suffix
16
20
55
trL
Low-Side Switching, Fall Time
tfL
High-Side Switching, Rise Time
trH
High-Side Switching, Fall Time
tfH
40
tBLH
100
TACH Output/FAULT Output
TACH Output Pulsewidth
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70
Risetime = 1 to 10 V
Falltime = 10 to 1 V
CL = 600 pF
25
100
tBHL
VOL
tT
V
0.1
V+ = 40 V
Low-Side Switching, Rise Time
Break Before Make Time
Break-Before-Make
17.5
ns
300
IOL = 1.0 mA
0.15
300
600
0.4
V
ns
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
Si9979
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
Limits
Mina
V+ = 20 to 40 V, IDD = 0 mA
Typb
Maxa
Unit
Protection
Low-Side Undervoltage Lockout
UVLL
Low-Side Hysteresis
12.2
VH
High-Side Undervoltage Lockout
0.8
UVLH
SA, B, C = 0 V
V
VDD − 3.3
Current Limit
Comparator Input Bias Current
IIB
Comparator Threshold Voltage
VTH
Common Mode Voltage
VCM
One Shot Pulse Width
−5
mA
TA = 0 to 70_C
C Suffix
90
100
110
TA = −40 to 85_C
D Suffix
85
100
125
0
tp
1
RT = 10 k, CT = 0.001 mF
8
10
12
RT = 10 k, CT = 0.01 mF
80
100
120
mV
V
ms
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The reference voltage is not available for external use.
d. VCAP = (V+) + (VDD).
COMMUTATION TRUTH TABLE
Inputs
Sensors
(60_Spacing)
Outputs
Sensors
(120_Spacing)
Top Drive
INA
INB
INC
INA
INB
INC
EN
F/R
BR
K
IS+
0
0
0
1
0
1
1
1
0
1
0
0
1
0
0
1
1
0
1
1
0
1
1
0
1
1
1
1
1
0
1
0
1
0
1
1
0
1
1
0
0
1
0
0
0
0
0
1
1
0
0
1
1
1
0
Conditions
Bottom Drive
GB
GB
GB
A
B
C
A
B
C
0
1
0
0
0
1
0
1
0
1
0
0
0
0
1
1
0
0
0
1
0
0
0
1
1
1
0
0
0
1
0
1
0
0
1
1
1
0
0
0
0
1
1
0
0
1
1
1
1
0
0
0
0
1
0
1
0
1
0
1
1
0
0
0
0
1
0
1
0
0
1
1
0
0
1
0
0
0
0
0
1
1
0
0
1
0
1
1
0
1
0
0
0
0
0
1
0
1
0
1
1
1
0
1
0
1
0
0
0
1
0
0
0
1
0
1
1
1
0
1
1
1
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
1
1
0
0
0
0
1
0
0
0
1
1
X
X
X
X
X
X
0
X
0
X
0
0
0
0
0
0
0
Disable
X
X
X
X
X
X
0
X
1
X
0
0
0
1
1
1
0
Power Down
L
L
L
L
L
L
1
X
1
0
0
0
0
1
1
1
1
Brake
L
L
L
L
L
L
1
X
1
1
0
0
0
1
1
1
0
Over I in BRK
L
L
L
L
L
L
1
X
0
1
0
0
0
0
0
0
0
Over I
1
0
1
1
1
1
1
X
0
X
0
0
0
0
0
0
0
1
0
1
1
1
1
1
X
1
X
0
0
0
1
1
1
0
0
1
0
0
0
0
1
X
0
X
0
0
0
0
0
0
0
0
1
0
0
0
0
1
X
1
X
0
0
0
1
1
1
0
Notes:
GT- GT- GT-
FAULT
L. Any valid sensor combination
X. Don’t care
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
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Si9979
Vishay Siliconix
PIN CONFIGURATION AND ORDERING INFORMATION
GND
GND
GND
GND
GND
V DD
V+
GND
GND
GND
GND
GND
SQFP-48
48 47 46 45 44 43 42 41 40 39 38 37
ORDERING INFORMATION
36
CAPA
Standard
Part Number
Lead (Pb)-Free
Part Number
35
SA
Si9979CS
Si9979CS—E3
0 to 70_C
34
GTA
Si9979DS—E3
−40 to 85_C
4
33
GBA
Si9979DS
5
32
CAPB
F/R
6
31
SB
QS
7
30
GTB
PWM
8
29
GBB
BRK
9
28
CAPC
SC
INA
INB
1
2
INC
3
60/120
EN
TACH
10
27
FAULT
11
26
GTC
GND
12
25
GBC
Temperature
Range
Package
SQFP-48
NOTE: Si9979CS and Si9979DS are supplied in trays.
GND
GND
GND
IS −
GND
IS +
RT
R T/C T
GND
GND
GND
GND
13 14 15 16 17 18 19 20 21 22 23 24
Top View
PIN DESCRIPTION
Pins 1−3: INA, INB, INC
INA, INB, and INC are the commutation sensor inputs, and are
intended to be driven by open collector Hall effect switches.
These inputs have internal pull up resistors tied to VDD, which
eliminates the need for external pull up resistors.
Pin 4: 60/120
The 60/120 input allows the use of the Si9979 with either a 60_
or 120_ commutation sensor spacing. An internal pull up
resistor, which is tied to VDD, sets the default condition to 60_
spacing. 120_ spacing is selected by pulling this input to
ground.
pin is pulled up internally. When this pin is pulled to ground, the
commutation sensor logic levels are inverted internally,
causing reverse rotation.
Pin 7: QS (Quadrature Select)
This input determines whether the bottom MOSFETs or both
bottom and top MOSFETs switch in response to the PWM
signal. A logic “1” on this input enables only the bottom
MOSFETs. This is the default condition as this pin is pulled up
internally. When this pin is pulled to ground, both the bottom
and top MOSFETs are enabled.
Pin 5: EN (Enable)
A logic “1” on this input allows commutation of the motor. This
is the default condition as this pin is pulled up internally. When
this pin is pulled to ground, all gate drive outputs are turned off.
Pin 6: F/R (Forward/Reverse)
A logic “1” on this input selects commutation for motor rotation
in the “forward” direction. This is the default condition as this
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Pin 8: PWM
An open collector (drain) or TTL compatible signal is applied
to this input to control the motor speed. The QS input
determines which MOSFETs are switched in response to the
PWM signal. If no PWM signal is being used, this input is left
open. It is pulled up internally, which allows the MOSFETs to
follow the commutation sequence.
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
Si9979
Vishay Siliconix
PIN DESCRIPTION (CONT’D)
Pin 9: BRK
Pins 12−16: 21−24, 37−41, 44−48, GND
With this input at logic “1”, the top MOSFETs are turned off and
the bottom MOSFETs are turned on, shorting the motor
windings together. This provides a braking torque which is
dependent on the motor speed. This is the default condition as
this pin is pulled up internally. When this pin is pulled to ground,
the MOSFETs are allowed to follow the commutation
sequence.
These pins are the return path for both the logic and gate drive
circuits. Also, they serve to conduct heat out of the package,
into the circuit board.
Pin 10: TACH
This output provides a minimum 300-nanosecond output
pulse for every commutation sensor transition, yielding a 6
pulse per electrical revolution tachometer signal. This output
is open drain.
Pin 11: FAULT
The FAULT output switches low to indicate that at least one of
the following conditions exists, controller disable (EN),
undervoltage lockout, invalid commutation sensor code
shutdown, or overcurrent shutdown. This output is open drain.
Pin 17: RT/CT
The junction of the current limit one shot timing resistor and
capacitor is connected to this pin. This one-shot is triggered by
the current limit comparator when an overcurrent condition
exists. This action turns off all the gate drives for the period
defined by RT and CT , thus stopping the flow of current.
Pin 25: GBC
This is the gate drive output for the bottom MOSFET in
Phase C.
Pin 26: GTC
This is the gate drive output for the top MOSFET in Phase C.
Pin 27: SC
This pin is negative supply of the high-side drive circuitry. As
such, it is the connection for the negative side of the bootstrap
capacitor, the top MOSFET Source, the bottom MOSFET
Drain, and the Phase C output.
Pin 28: CAPC
This pin is the positive supply of the high-side circuitry. The
bootstrap capacitor for Phase C is connected between this pin
and SC.
Pin 29: GBB
This is the gate drive output for the bottom MOSFET in Phase
B.
Pin 18: RT
Pin 30: GTB
One side of the current limit one shot timing resistor is
connected to this pin.
This is the gate drive output for the top MOSFET in Phase B.
Pin 19: IS+
This is the sensing input of the current limit comparator and
should be connected to the positive side of the current sense
resistor. When the voltage across the current sense resistor
exceeds 100 mV, the comparator switches and triggers the
current limit one-shot. The one-shot turns off all the gate drives
for the period defined by RT and CT, thus stopping the flow of
current. If the overcurrent condition remains after the
shutdown period, the gate drives will be held off until the
overcurrent condition no longer exists.
Pin 20: IS−
This pin is the ground reference for the current limit
comparator. It should be connected directly to the ground side
of the current sense resistor to enhance noise immunity.
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
Pin 31: SB
This pin is negative supply of the high-side drive circuitry. As
such, it is the connection for the negative side of the bootstrap
capacitor, the top MOSFET Source, the bottom MOSFET
Drain, and the Phase B output.
Pin 32: CAPB
This pin is the positive supply of the high-side circuitry. The
bootstrap capacitor for Phase B is connected between this pin
and SB.
Pin 33: GBA
This is the gate drive output for the bottom MOSFET in
Phase A.
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Si9979
Vishay Siliconix
PIN DESCRIPTION (CONT’D)
Pin 34: GTA
Pin 42: V+
This is the gate drive output for the top MOSFET in Phase A.
The supply voltage for the Si9979 is connected between this
pin and ground. The internal logic and high-side supply
voltages are derived from V+.
Pin 35: SA
This pin is negative supply of the high-side drive circuitry. As
such, it is the connection for the negative side of the bootstrap
capacitor, the top MOSFET Source, the bottom MOSFET
Drain, and the Phase A output.
Pin 43: VDD
VDD is the internal logic and gate drive voltage. It is necessary
to connect a capacitor between this pin and ground to insure
that the current surges seen at the turn on of the bottom
MOSFETs does not trip the undervoltage lockout circuitry.
Pin 36: CAPA
This pin is the positive supply of the high-side circuitry. The
bootstrap capacitor for Phase A is connected between this pin
and SA.
APPLICATION CIRCUITS
LITTLE FOOT
V+
Q1
Si9979
1 mF
To
Commutation
Sensors
42
V+
43
VDD
SA
35
1
INA
CAPA
36
2
INB
GTB
3
INC
SB
31
CAPB
32
5
EN
6
F/R
9
10
7
8
11
18
17
PWM IN
FAULT
RT
GTC
30
26
27
CAPC
28
TACH
GBA
35
QS
GBB
29
PWM
FAULT
RT
RT/CT
GBC
25
IS+
19
IS−
20
GND
GND
60/120
CT
12−16, 21−24
37−41, 44−48
Q3
34
SC
BRK
4
TACH
GTA
Q2
CBA
A
CBB
B
C
CBC
Q4
Q5
To
Motor
Windings
Q6
R
C
RS
GND
FIGURE 1. Three-Phase Brushless DC Motor Controller
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Document Number: 70012
S-41209—Rev. E, 21-Jun-04
Si9979
Vishay Siliconix
APPLICATION CIRCUITS
LITTLE FOOT
V+
Q1
Si9979
1 mF
42 V+
43 V
GTA
DD
To
Commutation
Sensor
36
CAPA
INB
3
GTB
INC
SB
31
CAPB
32
4
RT
35
INA
9
PWM IN
FAULT
SA
2
6
TACH
34
1
5
EN
GTC
F/R
BRK
60/120
10
TACH
7
QS
8
PWM
11
FAULT
18
RT
17
RT/CT
GND
Q2
CBA
30
A
B
CBB
26
SC
27
CAPC
28
GBA
35
GBB
29
GBC
25
IS+
19
IS−
GND
20
To
Motor
Windings
Notes:
Q4
Q5
1) If driving single phase
BLDC, tie INA, INB, and INC
together and drive with single
hall.
2) If it is being used as an Hbridge controller, tie INA, INB,
and INC to GND. Use F/R input to change active diagonal
pair of MOSFETs.
R
3) There is no TACH output
when connected in this configuration.
C
CT
RS
12−16, 21−24
37−41, 44−48
GND
FIGURE 2. Single H-Bridge Controller
LITTLE FOOT
V+
MC14022
0
1 mF
42
1
43
2
CLK
CP0
Q1
Si9979
1
3
2
4
3
5
6
5
7
CP1
MR
6
9
4
10
7
8
11
18
17
TACH
PWM IN
FAULT
RT
CT
V+
GTA
VDD
SA
INA
CAPA
INB
GTB
INC
EN
F/R
BRK
60/120
TACH
Q
S
PWM
FAULT
RT
RT/CT
GND
SB
CAPB
GTC
C
GBB
35
36
30
32
26
35
A
CBB
B To
Motor
C Windings
CBC
Q4
Q5
Q6
29
IS− 20
GND
12−16, 21−24
37−41, 44−48
CBA
31
GBC 25
I + 19
S
Q3
34
SC 27
28
CAP
GBA
Q2
R
C
RS
GND
FIGURE 3. Three-Phase AC Motor Controller
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
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Si9979
Vishay Siliconix
APPLICATION CIRCUITS
V+
VDD’
V+
VDD
C1
Si9979
1 mF
VDD’ = VDD − VBE
FIGURE 4. External VDD Regulator
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Document Number: 70012
S-41209—Rev. E, 21-Jun-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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