MICROSEMI APTGL60DH120T3G

APTGL60DH120T3G
Asymmetrical - Bridge
Trench + Field Stop IGBT4
Power module
13
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
14
Q1
CR1
VCES = 1200V
IC = 60A @ Tc = 80°C
CR3
18
22
7
23
8
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
19
Q4
CR2
CR4
4
3
29
30
31
15
32
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS compliant
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1200
80
60
100
±20
280
Tj = 150°C
100A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
May, 2009
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGL60DH120T3G – Rev 0
Symbol
VCES
APTGL60DH120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 1.6mA
VGE = 20V, VCE = 0V
Typ
5.0
1.85
2.25
5.8
Min
Typ
Max
Unit
250
2.25
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE= ±15V ; VCE=600V
IC=50A
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 50A
RG = 8.2Ω
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 50A
RG = 8.2Ω
TJ = 25°C
VGE = ±15V
VCE = 600V
TJ = 150°C
IC = 50A
TJ = 25°C
RG = 8.2Ω
TJ = 150°C
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
2770
205
160
pF
0.38
µC
130
20
300
ns
45
150
35
350
80
3.8
5.5
2.5
4.5
ns
mJ
mJ
200
A
Reverse diode ratings and characteristics
Test Conditions
Min
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
VR=1200V
IF = 50A
VGE = 0V
IF = 50A
VR = 600V
di/dt =1300A/µs
Typ
Tj = 25°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
90
1.5
1.43
Tj = 25°C
155
Tj = 150°C
Tj = 25°C
300
4.8
Tj = 150°C
Tj = 25°C
Tj = 150°C
10
1.7
3.6
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Max
250
2.0
Unit
V
µA
A
V
May, 2009
Characteristic
ns
µC
mJ
2-5
APTGL60DH120T3G – Rev 0
Symbol
VRRM
IRM
IF
APTGL60DH120T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.53
0.62
Unit
°C/W
V
175
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGL60DH120T3G – Rev 0
28
17
1
May, 2009
SP3 Package outline (dimensions in mm)
APTGL60DH120T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
100
Output Characteristics
100
TJ = 150°C
80
TJ=25°C
60
VGE=19V
60
TJ=150°C
IC (A)
IC (A)
80
40
20
VGE=15V
40
VGE=9V
20
0
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
100
12
E (mJ)
IC (A)
60
40
TJ=150°C
3
4
VCE = 600V
VGE = 15V
RG = 8.2 Ω
TJ = 150°C
TJ=25°C
16
2
VCE (V)
Energy losses vs Collector Current
20
80
20
1
Eoff
8
4
Er
Eon
0
0
5
6
7
8
9
10
11
12
0
13
20
60
80
100
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
120
Eon
10
100
VCE = 600V
VGE =15V
IC = 50A
TJ = 150°C
8
6
80
IC (A)
E (mJ)
40
Eoff
60
40
4
VGE=15V
TJ=150°C
RG=8.2 Ω
20
Er
2
0
0
10
20
30
Gate Resistance (ohms)
40
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
IGBT
May, 2009
0.5
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APTGL60DH120T3G – Rev 0
Thermal Impedance (°C/W)
0.6
APTGL60DH120T3G
Forward Characteristic of diode
120
VCE=600V
D=50%
RG=8.2 Ω
TJ=150°C
Tc=75°C
ZCS
100
75
50
IF, Forward Current (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
125
ZVS
25
Hard
switching
100
80
60
TJ=150°C
40
TJ=25°C
20
0
0
10
20
30
40
50 60
IC (A)
70
80
90
0
0.5
1
1.5
2
VF, Anode to Cathode Voltage (V)
0.7
0.6
0.9
0.5
0.7
0.4
DIODE
0.5
0.3
0.2
0.1
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL60DH120T3G – Rev 0
May, 2009
Thermal Impedance (°C/W)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration