MA4AGSW4 AlGaAs SP4T PIN Diode Switch Features V 1.00 MA4AGSW4 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 1.0 dB Insertion Loss, 32 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n Description M/A-COM’s MA4AGSW4 is an Aluminum-Gallium-Arsenide anode enhanced, SP4T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. Absolute Maximum Ratings1 @ TA = +25 °C (Unless otherwise specified) Parameter Maximum Rating Operating Temperature -55 °C to +125 °C Storage Temperature -65 °C to +150 °C Incident C.W. RF Power + 23 dBm C. W. Applications The low capacitance of the PIN diodes used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequencies. These AlGaAs PIN switches are used as the switching arrays for radar systems, radiometers, and other multi-assembly components. Reverse Voltage Bias Current 25 V +/- 30 mA 1. Exceeding any of these values may result in permanent damage Nominal Chip Dimensions Chip Chip Dimensions (µm) X 1725 Y 1530 RF Pad Dimensions (µm) X 100 Y 100 J1 J2 J3 J4 J5 Pad Locations (µm) X Y 0 0 -736 +506 -511 +1277 -511 +1277 +736 +506 Pad Locations Relative to J1 AlGaAs SP4T PIN Diode Switch MA4AGSW4 V 1.00 Electrical Specifications @ TA = 25 °C, +/- 10 mA Bias Current (On-Wafer Measurements) RF Specifications Parameters Frequency Minimum Typical Maximum Units Insertion Loss 0.05 - 18 GHz 18 - 50 GHz - 0.7 1.0 0.8 1.4 dB Isolation 0.05 - 18 GHz 18 - 50 GHz 25 25 41 32 - dB Input Return Loss 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 10 10 10 10 21 22 26 17 - dB - dB 10 GHz - 20 - ns Output Return Loss Switching Speed NOTES: 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times. Typical Driver Connections Control Level (DC Current) RF Output Conditions J2 J3 J4 J5 J2-J1 J3-J1 J4-J1 J5-J1 -10 mA +10 mA +10 mA +10 mA Low Loss Isolation Isolation Isolation +10 mA -10 mA +10 mA +10 mA Isolation Low Loss Isolation Isolation +10 mA +10 mA -10 mA +10 mA Isolation Isolation Low Loss Isolation +10 mA +10 mA +10 mA -10 mA Isolation Isolation Isolation Low Loss 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch MA4AGSW4 V 1.00 Microwave and Millimeter Wave Performance TYPICAL INSERTION LOSS @ -10 mA 0 IL ( dB ) -0.5 -1 -1.5 -2 0.00 10.00 20.00 30.00 40.00 50.00 40.00 50.00 FREQUENCY ( GHz ) J3 & J4 J2 & J5 IL ( dB ) TYPICAL ISOLATION @ +10 mA 0 -10 -20 -30 -40 -50 -60 -70 -80 0.00 10.00 20.00 30.00 FREQUENCY ( GHz ) J3 & J4 J2 & J5 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch MA4AGSW4 V 1.00 Microwave and Millimeter Wave Performance (cont’d) IRL ( dB ) TYPICAL INPUT RETURN LOSS @ -10 mA 0 -5 -10 -15 -20 -25 -30 -35 -40 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) J3 & J4 J2 & J5 IRL ( dB ) TYPICAL OUTPUT RETURN LOSS @ -10 mA 0 -5 -10 -15 -20 -25 -30 -35 -40 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) J3 & J4 J2 & J5 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch MA4AGSW4 V 1.00 Assembly Considerations Solder Die Attachment The following precautions should be observed to avoid damaging these chips. All die attach and bonding methods should be compatible with gold metal. Solder which does not scavange gold, such as 80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not expose die to a temperature greater than 300 °C for more than 10 seconds. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Electro-Static Sensitivity These Devices are considered ESD Class1. Proper ESD techniques should be used when handling these devices. Electrically Conductive Epoxy Die Attachment Assembly can be preheated to approximately 125 °C. Use a controlled thickness of approximately 2 mils for best electrical and thermal conductivity. Cure epoxy as per manufacturer’s schedule. For extended cure times, temperatures should be kept below 150 °C. General Handling The protective polymer coating on the active areas of these die provides scratch and impact protection, particularly for the metal airbridge which contacts the diode’s anode. Die should primarily be handled with vacuum pickups, or alternatively with plastic tweezers. Ribbon/Wire Bonding Wedge thermocompression bonding or ball bonding may be used to attach ribbons or wires to the RF bonding pads. Gold ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest inductance and best microwave performance. Mounting Techniques These AlGaAs devices are designed to be mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which is not rich in Sn content. Operation of the MA4AGSW4 The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Ports achieves operation of the MA4AGSW Series of AlGaAs PIN Switches. The Backside Area of the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. Constant Current Sources should supply the DC Control Currents. The Diode voltages at these Bias Nodes will not exceed + 1.6 volts ( + 1.4 volts typical for Supply Currents up to + 30 mA). In the Low Loss State, the Series Diode must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased and the Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation. Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return Path, (J1). A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard, + 5 V TTL Controlled PIN Diode Driver. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch MA4AGSW4 V 1.00 MA4AGSW4 Schematic with 2-18 GHz Bias Network J1 39 pF 22 pF 22 nH 100 Ohms DC Bias 39 pF J5 DC Bias 22 nH 22 nH 22 pF 39 pF J2 22 pF J4 J3 AlGaAs Switch Die 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020