VISHAY BAT46-TAP

BAT46
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications.
• This diode features very low turn-on volte2
age and fast switching. This device is protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges
• This diode is also available in the SOD123 case
with type designation BAT46W-V and in the
MiniMELF case with type designations LL46.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: Black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT46
Ordering code
Type Marking
Remarks
BAT46-TR or BAT46-TAP
BAT46
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Symbol
Value
VRRM
100
Unit
V
1)
mA
IFRM
3501)
mA
Surge forward current
tp < 10 ms, Tamb = 25 °C
IFSM
750
1)
mA
Power dissipation1)
Tamb = 80 °C
Ptot
1501)
mW
Forward continuous current
Tamb = 25 °C
Repetitive peak forward current
tp < 1 s, δ < 0.5, Tamb = 25 °C
IF
150
1) Valid provided that electrodes are kept at ambient temperature
Document Number 85662
Rev. 1.6, 26-Feb-07
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1
BAT46
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Ambient operating temperature range
Tamb
- 65 to + 125
°C
Storage temperature range
Tstg
- 65 to +150
°C
Junction temperature
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IR = 100 µA (pulsed)
Reverse breakdown voltage
2)
Leakage current
2)
Forward voltage
Diode capacitance
Symbol
Min
V(BR)
100
Typ.
Max
Unit
V
VR = 1.5 V
IR
0.5
µA
VR = 1.5 V, Tj = 60 °C
IR
5
µA
VR = 10 V
IR
0.8
µA
VR = 10 V, Tj = 60 °C
IR
7.5
µA
VR = 50 V
IR
2
µA
VR = 50 V, Tj = 60 °C
IR
15
µA
VR = 75 V
IR
5
µA
VR = 75 V, Tj = 60 °C
IR
20
µA
IF = 0.1 mA
VF
250
mV
IF = 10 mA
VF
450
mV
IF = 250 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
10
pF
VR = 1 V, f = 1 MHz
CD
6
pF
2) Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IR - Reverse Leakage Current (µA)
I F - Forward Current (mA)
1000
T j = 60 °C
100
10
25 °C
1
0.1
0.01
0
18546
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
1.2
Figure 1. Typical Instantaneous Forward Characteristics
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2
100
10
T j = 60 °C
1
Tj = 25 °C
0.1
0.01
0
18547
20
40
60
80
100
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
Document Number 85662
Rev. 1.6, 26-Feb-07
BAT46
Vishay Semiconductors
P tot - Power Dissipation (mW)
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T amb - Ambient Temperature (°C)
20134
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Package Dimensions in millimeters (inches): DO35
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85662
Rev. 1.6, 26-Feb-07
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BAT46
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85662
Rev. 1.6, 26-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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