VISHAY BAS70-02V-GS18

BAS70-02V
Vishay Semiconductors
Small Signal Schottky Diodes, Single
Features
• These diodes feature very low turn-on
voltage and fast switching.
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Space saving SOD-523 package
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
1
e3
1
2
2
18554
Mechanical Data
Case: SOD-523 Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 1.6 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS70-02V
Ordering code
Marking
BAS70-02V-GS18 or BAS70-02V-GS08
Remarks
X
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Symbol
Value
VRRM
70
Unit
V
IF
200
mA
Forward continuous current
Tamb = 25 °C
Surge forward current
tp < 1 s, Tamb = 25 °C
IFSM
600
mA
Power dissipation
Tamb = 25 °C
Ptot
200
mW
Symbol
Value
Unit
RthJS
100
K/W
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Junction temperature
Tj
125
°C
Storage temperature range
TS
- 55 to +125
°C
Document Number 85652
Rev. 1.3, 29-Jun-05
www.vishay.com
1
BAS70-02V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 10 µA (pulsed)
Leakage current
VR = 50 V, tp < 300 µs
Symbol
Min
V(BR)R
70
Typ.
Max
Unit
20
100
nA
V
IR
tp < 300 µs, IF = 1.0 mA
VF
410
mV
tp < 300 µs, IF = 15 mA
VF
1000
mV
Diode capacitance
VR = 0 V, f = 1 MHz
Ctot
2
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100 Ω
5
ns
Forward voltage
1.5
trr
ISO Method E
0.6 (0.023)
0.15 (0.006)
Package Dimensions in mm (Inches)
0.22 (0.008)
0.16 (0.006)
0.8 (0.031)
Mounting Pad Layout
1.6 (0.062)
0.3 (0.012)
1.35 (0.053)
0.15 A
A
1.2 (0.047)
0.39 (0.015)
0.35 (0.014)
16864
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Document Number 85652
Rev. 1.3, 29-Jun-05
BAS70-02V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85652
Rev. 1.3, 29-Jun-05
www.vishay.com
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