DC COMPONENTS CO., LTD. BC337 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 50 - - V Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 0.1 µA VCB=45V, IE=0 Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=100µA, IE=0 VCE(sat) - - 0.7 V IC=500mA, IB=50mA VBE(on) - - 1.2 V IC=300mA, VCE=1V hFE1 100 - 630 - IC=100mA, VCE=1V hFE2 40 - - - IC=300mA, VCE=1V fT - 210 - MHz - 4 - pF Cob 380µs, Duty Cycle 2% Classification of hFE1 Rank 16 25 40 Range 100~250 160~400 250~630 IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0