STMICROELECTRONICS BCY59

BCY59
®
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The BCY59 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
The PNP complementary type Is BCY79.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
Parameter
45
V
V CEO
Collector-Emitter Voltage (I B = 0)
45
V
V EBO
Emitter-Base Voltage (I C = 0)
IC
Collector Current
IB
Base Current
P tot
T stg
Tj
Total Dissipation at T amb ≤ 25 o C
at T C ≤ 25 o C
Storage Temperature
Max. Operating Junction Temperature
September 2002
7
V
200
mA
50
mA
0.39
1
W
W
-55 to 175
o
C
175
o
C
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BCY59
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
150
384.6
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 45 V
V CE = 45 V
T C = 150 o C
I CEX
Collector Cut-off
Current (V BE = -0.2 V)
V CE = 45 V
T C = 100 o C
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
Unit
10
10
nA
µA
20
µA
10
nA
V
7
V
I E = 10 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
I B = 0.25 mA
I B = 2.5 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
I B = 0.25 mA
I B = 2.5 mA
V BE(on) ∗
Base-Emitter (on)
Voltage
I C = 2 mA
I C = 100 mA
V CE = 5 V
V CE = 1 V
h FE ∗
DC Current Gain
I C = 10 µA
Gr. VIII
Gr. IX
Gr. X
I C = 2 mA
Gr. VIII
Gr. IX
Gr. X
I C = 10 mA
Gr. VIII
Gr. IX
Gr. X
I C = 100 mA
Gr. VIII
Gr. IX
Gr. X
V CE = 5 V
Small Signal Current
Gain
I C = 2 mA
Gr. VIII
Gr. IX
Gr. X
Transition Frequency
I C = 10 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/6
Max.
0.1
0.1
45
Emitter-Base
Breakdown Voltage
(I C = 0)
fT
Typ.
I C = 2 mA
V (BR)EBO
hfe ∗
Min.
0.12
0.4
0.35
0.7
V
V
0.6
0.75
0.7
0.9
0.85
1.2
V
V
0.55
0.65
0.75
0.7
V
V
20
40
100
140
195
280
180
250
380
250
350
500
120
160
240
260
365
520
V CE = 5 V
310
460
630
V CE = 1 V
V CE = 1 V
45
60
60
V CE = 5 V f = 1 KHz
175
250
350
V CE = 5 V f = 100 MHz
350
500
700
200
MHz
BCY59
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C CBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
3.5
6
pF
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V
f = 1MHz
11
15
pF
NF
Noise Figure
I C = 0.2 mA V CE = 5 V
f = 1KHz
R g = 2KΩ ∆f = 200Hz
2
6
dB
t on
Turn-on Time
I C = 10 mA V CC = 10 V
I B1 = 1 mA
I C = 100 mA V CC = 10 V
I B1 = 10 mA
85
150
ns
55
150
ns
480
800
ns
480
800
ns
t off
Turn-off Time
DC Current Gain
I C = 10 mA V CC = 10 V
I B1 = - I B2 = 1 mA
I C = 100 mA V CC = 10 V
I B1 = - I B2 = 10 mA
Collector-Emitter Saturation Voltage
3/6
BCY59
Transition Frequeny
Collector-Base Capacitance
Noise Figure (f = 100 Hz)
Noise Figure (f = 1 KHz)
Noise Figure (f = 10 KHz)
Noise Figure vs. Frequency
4/6
BCY59
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
G
A
I
E
F
H
B
L
C
0016043
5/6
BCY59
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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