Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL 固 VCBO VCEO VEBO PARAMETER CONDITIONS BDY58 BDY57 80 Open base BDY58 Open collector V 160 V 125 10 V Collector current 25 A IB Base current 6 A PT Total power dissipation 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W IC Emitter-base voltage UNIT 120 Open emitter M E S GE N A H INC Collector-emitter voltage C U D ICON BDY57 Collector-base voltage TOR VALUE TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDY57 VCEO(SUS) V(BR)CBO MIN TYP. MAX UNIT 80 Collector-emitter sustaining voltage IC=0.1A ; IB=0 V BDY58 125 BDY57 120 Collector-emitter breakdown voltage IC=5mA ; IE=0 V BDY58 160 VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 1.4 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.4 V ICBO Collector cut-off current VCB=100V; IE=0 0.5 mA ICER Collector cut-off current VCE=80V; RBE=10Ω;TC=100℃ Emitter cut-off current VEB=10V; IC=0 IEBO 体 半导 固电 hFE-1 DC current gain hFE-2 DC current gain G N A CH IN OND IC M E ES IC=10A ; VCE=4V R O T UC 20 IC=20A ; VCE=4V fT Transition frequency IC=1A ; VCE=15V,f=10MHz ton Turn-on time IC=15A ;IB=1.5A 2 10 mA 0.5 mA 60 15 10 MHz 1.0 μs Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3