INFINEON BFP720F

BFP720F
SiGe:C Heterojunction Wideband RF Bipolar Transistor
Data Sheet
Revision 1.0, 2009-03-13
RF & Protection Devices
Edition 2009-03-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP720F
BFP720F, SiGe:C Heterojunction Wideband RF Bipolar Transistor
Revision History: 2009-03-13, Revision 1.0
Previous Revision:
Page
Subjects (major changes since last revision)
Converted to the new IFX Template.
Business Unit, Infineon Logo and the Trademarks were changed.
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CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™,
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EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™,
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Other Trademarks
AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is
licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of
Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of
Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION.
MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of
Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc.,
USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc.
Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of
Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™
of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™
of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™,
PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™,
WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2009-10-19
Data Sheet
3
Revision 1.0, 2009-03-13
BFP720F
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
5.1
5.2
5.3
5.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
4
13
13
13
14
19
Revision 1.0, 2009-03-13
BFP720F
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Permissible Pulse Load RthJS = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP720F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE Parameter in V. . . . . . . . . . . . . . . . . . . . . . .
Power Gain Gma, Gms, IS21I² = f (freq), VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . .
Input Matching S11 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Matching S22 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance Zopt for NFmin vs. Frequency, VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (freq), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline TSFP-4(top / side view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Example (Marking BFP720F: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
11
12
12
14
19
19
20
20
21
21
22
22
23
25
25
25
25
Revision 1.0, 2009-03-13
BFP720F
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Data Sheet
Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision 1.0, 2009-03-13
SiGe:C Heterojunction Wideband RF Bipolar Transistor
1
Features
Main features:
•
•
•
•
•
•
•
•
•
•
•
•
High performance general purpose wideband LNA transistor
150 GHz fT-Silicon Germanium Carbon technology
3
Enables Best-In-Class performance for wireless applications due to
2
4
high dynamic range
1
Transistor geometry optimized for low-current applications
Operation voltage: 1.0 V to 4.0 V
Very high gain at high frequencies and low current consumption
26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
15 dB maximum available gain at 10 GHz and only 13 mA
Ultra low noise figure from latest SiGe:C technology
0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and low current consumption of 13 mA
Pb-free (RoHS compliant) package
Applications
FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi,
Cordless phone, UMTS, WLAN, UWB, LNB.
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP720F
Data Sheet
TSFP-4
Pin Configuration
1=B
2=E
3=C
7
Marking
4=E
R9s
Revision 1.0, 2009-03-13
BFP720F
Product Brief
2
Product Brief
The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT)
in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with lowest noise figure at low
operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for
portable battery-powered applications in which reduced power consumption is a key requirement. Collector design
supports operation voltages from 1.0 V to 4.0 V.
Table 1
Quick Reference DC Characteristics at TA = 25°C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Collector-emitter breakdown voltage
V(BR)CEO
4
4.7
–
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
13
15
–
V
IE = 0
Collector current
IC
–
–
25
mA
–
Total power dissipation
Ptot
–
–
100
mW
TS ≤ 109 °C
DC current gain
hFE
160
250
400
Data Sheet
8
VCE = 3 V, IC = 13 mA
Revision 1.0, 2009-03-13
BFP720F
Product Brief
Table 2
Quick Reference AC Characteristics at TA = 25°C
Parameter
Transition frequency
Symbol
fT
Values
Unit
Note / Test Condition
VCE = 3 V, IC = 13 mA,
f = 1 GHz
Min.
Typ.
Max.
–
45
–
GHz
–
dB
f = 2.4 GHz
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Gms
Gms
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
S21
S21
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
NFmin
Gass
Linearity
1 dB Gain Compression Point
3rd Order Intercept Point
–
IC = 5 mA
IC = 13 mA
22
25.5
–
–
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
–
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
–
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
–
dB
20.5
23
–
0.55
22
–
OP1dB
OIP3
6
21
f = 5.5 GHz
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Gms
Gms
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
S21
S21
–
–
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
NFmin
Gass
Linearity
1 dB Gain Compression Point
3rd Order Intercept Point
OP1dB
OIP3
Data Sheet
IC = 5 mA
IC = 13 mA
19
21.5
–
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
–
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
–
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
15
16.5
–
0.7
15
–
7
21
9
Revision 1.0, 2009-03-13
BFP720F
Maximum Ratings
3
Maximum Ratings
Table 3
Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter
Symbol
Collector-emitter voltage
VCEO
TA = -55 °C
Values
Min.
Max.
–
4.0
–
3.5
Unit
V
Collector-emitter voltage
VCES
–
13
V
Collector-base voltage
VCBO
–
13
V
Emitter-base voltage
VEBO
–
1.2
V
Collector current
IC
–
25
mA
IB
–
2
mA
Ptot
–
100
mW
TJOp
-55
150
°C
Base current
Total power dissipation
1)
Note / Test Condition
TS ≤ 109 °C
Operation junction temperature
Storage temperature
TStg
-55
150
°C
1) TS is the soldering temperature. TS measured on the emitter lead at the soldering point of the pcb.
Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent
damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened.
Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at
others than standard operation conditions.
Data Sheet
10
Revision 1.0, 2009-03-13
BFP720F
Thermal Characteristics
4
Thermal Characteristics
Table 4
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
K/W
–
Max.
1)
Junction - soldering point
RthJS
–
410
–
1) For calculation of RthJA please refer to Application Note Thermal Resistance
120
100
Ptot [mW]
80
60
40
20
0
0
50
100
150
Ts [°C]
Figure 1
Data Sheet
Total Power Dissipation Ptot = f (Ts)
11
Revision 1.0, 2009-03-13
BFP720F
Thermal Characteristics
10
D= 0
D= .005
D= .01
Ptot_max / Ptot_DC
D= .02
D= .05
D= .1
D= .2
D= .5
D=0
D=0.5
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1
tp [sec]
Figure 2
Permissible Pulse Load Ptot_max / Ptot_DC = f (tp)
1000
RthJS [K/W]
D=0.5
D= .5
D= .2
D= .1
D= .05
D= .02
D= .01
D= .005
D=0
D= 0
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
100
tp [sec]
Figure 3
Data Sheet
Permissible Pulse Load RthJS = f (tp)
12
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Collector-emitter breakdown voltage
V(BR)CEO
4
4.7
–
V
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES
–
–
30
μA
VCE = 13 V, VBE = 0 V
Collector-base cutoff current
ICBO
–
–
100
nA
VCB = 5 V, IE = 0
Emitter-base cutoff current
IEBO
–
–
2
μA
VEB = 0.5 V, IC = 0
DC current gain
hFE
160
250
400
IC = 13 mA, VCE = 3 V
pulse measured
5.2
General AC Characteristics
Table 6
AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Transition frequency
fT
–
45
–
GHz
IC = 13 mA, VCE = 3 V
f = 1 GHz
Collector-base capacitance
Ccb
–
0.06
–
pF
VCB = 3 V, VBE = 0 V
f = 1 MHz
emitter grounded
Collector-emitter capacitance
Cce
–
0.3
–
pF
VCE = 3 V, VBE = 0 V
f = 1 MHz
base grounded
Emitter-base capacitance
Ceb
–
0.3
–
pF
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
collector grounded
Data Sheet
13
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a testfixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
C
E
VB
B
Bias-T
E
(Pin 1)
IN
Figure 4
BFP720F Testing Circuit
Table 7
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
34
–
IC = 5 mA
High Linearity Operation Point
Gms
–
37.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
23
–
IC = 5 mA
High Linearity Operation Point
S21
–
29
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.4
–
IC = 5 mA
Associated Gain
Gass
–
28
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
6
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
22.5
–
IC = 13 mA
Table 8
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
29
–
IC = 5 mA
High Linearity Operation Point
Gms
–
32.5
–
IC = 13 mA
Data Sheet
14
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
Table 8
AC Characteristics, VCE = 3 V, f = 450 MHz (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
dB
ZS = ZL = 50 Ω
Max.
Transducer Gain
Low Noise Operation Point
S21
–
22.5
–
IC = 5 mA
High Linearity Operation Point
S21
–
28.5
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.4
–
IC = 5 mA
Associated Gain
Gass
–
27.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
5.5
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
21.5
–
IC = 13 mA
Table 9
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
26.5
–
IC = 5 mA
High Linearity Operation Point
Gms
–
29.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
22.5
–
IC = 5 mA
High Linearity Operation Point
S21
–
27.5
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.45
–
IC = 5 mA
Associated Gain
Gass
–
25.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
5.5
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
20.5
–
IC = 13 mA
Table 10
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
24
–
IC = 5 mA
High Linearity Operation Point
Gms
–
27.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
21.5
–
IC = 5 mA
High Linearity Operation Point
S21
–
26
–
IC = 13 mA
Minimum Noise Figure
Minimum Noise Figure
Data Sheet
dB
NFmin
–
0.45
15
–
ZS = Zopt
IC = 5 mA
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
Table 10
AC Characteristics, VCE = 3 V, f = 1.5 GHz (cont’d)
Parameter
Symbol
Associated Gain
Gass
Values
Unit
Min.
Typ.
Max.
–
24
–
Linearity
Note / Test Condition
IC = 5 mA
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
6
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
21
–
IC = 13 mA
Table 11
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
23
–
IC = 5 mA
High Linearity Operation Point
Gms
–
26.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
21
–
IC = 5 mA
High Linearity Operation Point
S21
–
24.5
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.5
–
IC = 5 mA
Associated Gain
Gass
–
23
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
6.5
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
21
–
IC = 13 mA
Table 12
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
22
–
IC = 5 mA
High Linearity Operation Point
Gms
–
25.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
20.5
–
IC = 5 mA
High Linearity Operation Point
S21
–
23
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.55
–
IC = 5 mA
Associated Gain
Gass
–
22
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
6
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
21
–
IC = 13 mA
Data Sheet
16
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
Table 13
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
20.5
–
IC = 5 mA
High Linearity Operation Point
Gms
–
23.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
18
–
IC = 5 mA
High Linearity Operation Point
S21
–
20.5
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.6
–
IC = 5 mA
Associated Gain
Gass
–
19.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
6.5
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
21.5
–
IC = 13 mA
Table 14
AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gms
–
19
–
IC = 5 mA
High Linearity Operation Point
Gms
–
21.5
–
IC = 13 mA
Transducer Gain
dB
ZS = ZL = 50 Ω
Low Noise Operation Point
S21
–
15
–
IC = 5 mA
High Linearity Operation Point
S21
–
16.5
–
IC = 13 mA
Minimum Noise Figure
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
0.7
–
IC = 5 mA
Associated Gain
Gass
–
15
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
7
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
21
–
IC = 13 mA
Table 15
AC Characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum Power Gain
dB
Low Noise Operation Point
Gma
–
14
–
IC = 5 mA
High Linearity Operation Point
Gma
–
15
–
IC = 13 mA
Transducer Gain
Low Noise Operation Point
Data Sheet
dB
S21
–
9.5
17
–
ZS = ZL = 50 Ω
IC = 5 mA
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
Table 15
AC Characteristics, VCE = 3 V, f = 10 GHz (cont’d)
Parameter
High Linearity Operation Point
Symbol
S21
Values
Unit
Min.
Typ.
Max.
–
10.5
–
Minimum Noise Figure
Note / Test Condition
IC = 13 mA
dB
ZS = Zopt
Minimum Noise Figure
NFmin
–
1.0
–
IC = 5 mA
Associated Gain
Gass
–
10.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB Gain Compression Point
OP1dB
–
8
–
IC = 13 mA
3rd Order Intercept Point
OIP3
–
19.5
–
IC = 13 mA
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results
Data Sheet
18
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
5.4
Characteristic Curves
50
45
3.00V
40
35
2.00V
25
T
f [GHz]
30
20
1.50V
15
10
1.00V
5
0.50V
0
0
10
1
10
2
10
I [mA]
C
Figure 5
Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE Parameter in V
42
40
38
36
34
32
30
G
ms
28
G [dB]
26
24
22
20
2
Gma
|S21|
18
16
14
12
10
8
6
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 6
Data Sheet
Power Gain Gma, Gms, IS21I² = f (freq), VCE = 3 V, IC = 13 mA
19
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
42
40
0.15GHz
38
36
0.45GHz
34
32
0.90GHz
30
1.50GHz
1.90GHz
2.40GHz
G [dB]
28
26
3.50GHz
24
22
5.50GHz
20
18
16
10.00GHz
14
12
10
0
5
10
15
20
25
30
I [mA]
C
Figure 7
Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz
40
38
0.15GHz
36
34
0.45GHz
32
30
0.90GHz
28
1.50GHz
1.90GHz
2.40GHz
G [dB]
26
24
3.50GHz
22
5.50GHz
20
18
16
10.00GHz
14
12
10
8
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VCE [V]
Figure 8
Data Sheet
Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz
20
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
10 GHz
10 GHz
0.
4
9 GHz
9 GHz
8 GHz
0. 2
8 GHz
2.
0
6
0.
0 .8
1.0
Swp Max
10GHz
0
3.
S11 @ 3V, 13mA
0
4.
S11 @ 3V, 5mA
5. 0
7 GHz
1 0.0
6 GHz
10.0
10 MHz
5.0
4.0
3.0
2.0
1.0
5 GHz
0.8
0.6
0.4
0
0.2
7 GHz
4 GHz
- 10.
0
3 GHz
6 GHz
4
.0
-5 .
0
2
-0 .
5 GHz
2 GHz
1 GHz
1 GHz
.0
-2
3 GHz
-0
.6
Swp Min
0GHz
-1.0
- 0.8
2 GHz
Input Matching S11 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA
1.0
Swp Max
10GHz
2.
0
6
0.
0 .8
Figure 9
-3
.0
4 GHz
.4
-0
0
3.
0.
4
S22 @ 3V, 13mA
0
4.
S22 @ 3V, 5mA
5. 0
0. 2
1 0.0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
10 GHz
0.4
0
0.2
10 GHz
10 MHz
9 GHz
9 GHz
.0
-2
Swp Min
0GHz
-1.0
-0.8
-0
.6
Data Sheet
1 GHz
-3
.0
.4
-0
Figure 10
-4
.0
-5 .
0
2
-0 .
- 10.
0
8 GHz
7 GHz
6 GHz
8 GHz
5 GHz
4 GHz
7 GHz
3 GHz
1 GHz
6 GHz
2 GHz
5 GHz
4 GHz
3 GHz
2 GHz
Output Matching S22 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA
21
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
2.
0
0.
6
0.8
1.0
Swp Max
10GHz
0.
4
0
3.
10.0
10.0
5.0
4.0
3.0
2.0
1.9GHz
2.4GHz
5.5GHz
1.9GHz
0.9GHz
0.45GHz
1.0
0.8
0.4
5.0
2.4GHz
0.6
0.2
0.2
Δ: Ic = 13mA
Δ: Ic = 13mA
†: Ic = 5mA
†: Ic = 5mA
0
0
4.
5.5GHz
-10.0
2
10GHz
-5.
0
-0.
-4
.0
-3
.0
Figure 11
Swp Min
0.45GHz
-1.0
-0.8
-0
.6
.0
-2
.4
-0
Source Impedance Zopt for NFmin vs. Frequency, VCE = 3 V, IC = 5 mA / 13 mA
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
F [dB]
1.1
1
0.9
0.8
0.7
0.6
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
12
14
16
18
20
Ic [mA]
Figure 12
Data Sheet
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt
22
Revision 1.0, 2009-03-13
BFP720F
Electrical Characteristics
1.4
1.3
1.2
1.1
1
0.9
F [dB]
0.8
0.7
0.6
0.5
I = 13mA
C
0.4
I = 5.0mA
C
0.3
0.2
0.1
0
0
2
4
6
8
10
f [GHz]
Figure 13
Noise Figure NFmin = f (freq), VCE = 3 V, ZS = Zopt
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Data Sheet
23
Revision 1.0, 2009-03-13
BFP720F
Simulation Data
6
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters please refer to our internet website:
www.infineon.com/rf.models . Please consult our website and download the latest versions before actually
starting your design.
The simulation data have been generated and verified using typical devices. The BFP720F nonlinear
SPICE-model reflects the typical DC- and RF-device performance with high accuracy.
Data Sheet
24
Revision 1.0, 2009-03-13
BFP720F
Package Information
7
Package Information
0.2 ±0.05
1
3
1.2 ±0.05
0.2 ±0.05
4
0.55 ±0.04
2
0.2 ±0.05
0.8 ±0.05
1.4 ±0.05
0.15 ±0.05
0.5 ±0.05
0.5 ±0.05
Figure 14
TSFP-4-1, -2-PO V04
Package Outline TSFP-4(top / side view)
0.9
0.45
0.35
0.5
0.5
TSFP-4-1, -2-FP V04
Figure 15
Footprint
Figure 16
Marking Example (Marking BFP720F: R9s)
0.2
Pin 1
8
1.4
4
0.7
1.55
TSFP-4-1, -2-TP V05
Figure 17
Data Sheet
Tape Dimensions
25
Revision 1.0, 2009-03-13
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Published by Infineon Technologies AG