CMOS LDO Regulator Series for Portable Equipments High-ripple rejection CMOS LDO Regulators for High-frequency Circuits BH□□NB1WHFV Series No.09020EAT04 Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat sink, contributes to space-saving application designs. Features 1) High accuracy output voltage: ± 1% 2) High ripple rejection ratio: 80 dB (Typ., 1 kHz) 3) Stable with ceramic capacitors 4) Low bias current: 60 A 5) Output voltage on/off control 6) Built-in overcurrent and thermal shutdown circuits 7) Ultra-small HVSOF5 power package Applications Battery-driven portable devices, etc. Product line 150 mA BH□□NB1WHFV Series Product name 2.5 2.8 2.85 BH□□NB1WHFV √ √ 2.9 3.0 3.1 3.3 Package √ √ √ √ HVSOF5 √ Model name: BH□□NB1W□ a b Symbol Description Output voltage specification a b □□ Output voltage (V) □□ Output voltage (V) 25 2.5 V (Typ.) 30 3.0 V (Typ.) 28 2.8 V (Typ.) 31 3.1 V (Typ.) 2J 2.85 V (Typ.) 33 3.3 V (Typ.) 29 2.9 V (Typ.) Package HFV: HVSOF5 www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 1/8 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series Absolute maximum ratings Parameter Applied power supply voltage Power dissipation Symbol Limit Unit VMAX −0.3 to +6.0 V Pd 410 *1 mW Operating temperature range Topr −40 to +85 °C Storage temperature range Tstg −55 to +125 °C *1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm 70 mm 1.6 mm). Recommended operating ranges (not to exceed Pd) Parameter Symbol Limit Unit Power supply voltage VIN 2.5 to 5.5 V Output current IOUT 0 to 150 mA Recommended operating conditions Parameter Symbol Min. Typ. Max. Unit Conditions *2 — — F The use of ceramic capacitors is recommended. — — F The use of ceramic capacitors is recommended. Input capacitor CIN 0.1 Output capacitor CO 2.2 *2 *2 Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value cannot change as time progresses. Electrical characteristics (Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, CIN = 0.1 F, CO = 2.2 F) Parameter Symbol Min. Typ. Max. Unit Conditions Output voltage VOUT VOUT 0.99 VOUT VOUT 1.01 V IOUT = 1 mA Circuit current IGND — 60 100 A IOUT = 50 mA Circuit current (STBY) ISTBY — — 1.0 A STBY = 0 V RR — 80 — dB VRR = −20 dBv, fRR = 1 kz, IOUT = 10 mA Load response 1 LTV1 — 25 — mV IOUT = 1 mA to 30 mA Load response 2 LTV2 — 25 — mV IOUT = 30 mA to 1 mA Dropout voltage 1 VSAT1 — 80 150 mV VIN = 0.98 VOUT, IOUT = 30 mA Dropout voltage 2 VSAT2 — 250 450 mV VIN = 0.98 VOUT, IOUT = 100 mA Line regulation VDL1 — 1 20 mV VIN = VOUT + 0.5 V to 5.5 V, IOUT = 50 mA Load regulation 1 VDLO1 — 6 30 mV IOUT = 1 mA to 100 mA Load regulation 2 VDLO2 — 9 90 mV IOUT = 1 mA to 150 mA Overcurrent protection limit current ILMAX — 250 — mA VO = VOUT 0.98 ISHORT — 50 — mA VO = 0 V Ripple rejection ratio Short current STBY pull-down resistance STBY control voltage RSTB 275 550 1100 k ON VSTBH 1.5 — VIN V OFF VSTBL −0.3 — 0.3 V * This IC is not designed to be radiation-resistant. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 2/8 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series 4.0 4.0 3.5 3.5 3.5 3.0 3.0 2.5 2.0 1.5 1.0 2.5 2.0 1.5 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.0 0 1 2 3 4 Input Voltage VI N [V] 0 5 1 2 3 4 0 5 Input Voltage VIN[V] Fig. 1 Output Voltage vs Input Voltage (BH25NB1WHFV) Fig. 2 Output Voltage vs Input Voltage (BH30NB1WHFV) 80 70 70 70 50 40 30 20 10 60 50 40 30 20 1 2 3 4 Input Voltage V IN[V] 5 50 40 30 20 0 0 1 2 3 4 0 5 Input Voltage V IN[V] Fig. 5 GND Current vs Input Voltage (BH30NB1WHFV) Fig. 4 GND Current vs Input Voltage (BH25NB1WHFV) 3.0 3.0 3.0 2.0 1.5 1.0 0.5 Out put Voltage VOUT[V] 3.5 Out put Voltage VOUT[V] 3.5 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 200 250 Out put Current IOUT[mA] 300 1.0 0.0 0 50 100 150 200 250 300 0 Fig. 8 Output Voltage vs Output Current (BH30NB1WHFV) Dropout Voltage Dropout Voltage VSAT [ V] 0.4 VSAT [V] 0.4 0.3 0.2 0.1 0.0 0 50 100 Output Current IOUT[mA] 150 100 150 200 250 300 Fig. 9 Output Voltage vs Output Current (BH33NB1WHFV) 0.4 0.0 50 Output Current IOUT[mA] 0.5 0.1 5 1.5 0.5 0.2 4 2.0 0.5 0.3 3 2.5 Output Current IOUT[ mA] Fig. 7 Output Voltage vs Output Current (BH25NB1WHFV) 2 Input Voltage V IN[V] 0.5 0.0 0 1 Fig. 6 GND Current vs Input Voltage (BH33NB1WHFV) 3.5 2.5 5 60 0 0 2 3 4 Input Voltage VIN[V] 10 10 0 Out put Voltage VOUT [V] GND Current IGND[A] 80 60 1 Fig. 3 Output Voltage vs Input Voltage (BH33NB1WHFV) 80 GND Current IGND[A] GND Current IGND[ A] 3.0 0.5 0.5 Dropout Voltage VSAT [ V] Output Volt age VOUT [V] 4.0 Output Volt age VOUT [ V] Output Voltage VOUT[V] Reference data 0.3 0.2 0.1 0.0 0 50 100 Output Current IOUT[ mA] 150 0 50 100 150 Output Current IOUT[ mA] Fig. 10 Dropout voltage vs Output Current Fig. 11 Dropout voltage vs Output Current Fig. 12 Dropout voltage vs Output Current (BH33NB1WHFV) (BH30NB1WHFV) (BH25NB1WHFV) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 3/8 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series 3.10 2.55 2.50 2.45 3.40 Out put Volt age VOUT[ V] Out put Volt age VOUT[ V] Out put Volt age VOUT[ V] 2.60 3.05 3.00 2.95 IOUT=1mA 0 25 T emp[℃] 50 75 100 Fig. 13 Output Voltage vs Temperature (BH25NB1WHFV) 3.20 -50 -25 0 25 T emp[℃] 50 75 100 Fig. 14 Output Voltage vs Temperature (BH30NB1WHFV) -50 90 80 80 60 50 40 30 Co=2.2μF Io=10mA 20 Ripple Rejection R.R.[dB] 90 80 70 70 60 50 40 30 Co=2.2μF Io=10mA 20 10 1k 10 k 100 k 1M 1k 50 mV / div 50 75 100 70 60 50 40 30 Co=2.2μF Io=10mA 10 k 100 k 1M 100 1k Frequency f[Hz] 100 k 1M Fig. 18 Ripple Rejection (BH33NB1WHFV) IOUT = 1 mA → 30 mA IOUT = 1 mA → 30 mA VOUT 10 k Frequency f[Hz] Fig. 17 Ripple Rejection (BH30NB1WHFV) IOUT = 1 mA → 30 mA VOUT 25 T emp[℃] 10 100 Frequency f[Hz] Fig. 16 Ripple Rejection (BH25NB1WHFV) 0 20 10 100 -25 Fig. 15 Output Voltage vs Temperature (BH33NB1WHFV) 90 Ripple Rejection R.R.[dB] Ripple Rejection R.R.[dB] 3.25 IOUT=1mA 2.90 -25 3.30 IOUT=1mA 2.40 -50 3.35 50 mV / div VOUT 50 mV / div 100 s / div 100 s / div 100 s / div Fig. 19 Load Response (Co = 2.2 F) (BH25NB1WHFV) Fig. 20 Load Response (Co = 2.2 F) (BH30NB1WHFV) 1 V / div STBY 1 V / div STBY 1 V / div Co = 1 F Co = 10 F VOUT VOUT Co = 2.2 F Co = 10 F Co = 2.2 F 100 s / div Fig. 22 Output Voltage Rise Time (BH25NB1WHFV) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 1 V / div STBY 1 V / div Co = 1 F Fig. 21 Load Response (Co = 2.2 F) (BH33NB1WHFV) Co = 1 F VOUT 100 s / div Fig. 23 Output Voltage Rise Time (BH30NB1WHFV) 4/8 1 V / div Co = 10 F Co = 2.2 F 100 s / div Fig. 24 Output Voltage Rise Time (BH33NB1WHFV) 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series Block diagram, recommended circuit diagram, and pin assignment diagram BH□□NB1WHFV VIN VIN VOLTAGE REFERENCE Cin 4 VOUT OVER CURRENT PROTECTION VSTB STBY Symbol VOUT 1 STBY Co 2 3 4 5 GND VIN VOUT N.C. THERMAL PROTECTION 2 GND Pin No. 3 N.C. CONTROL BLOCK 1 5 Function Output voltage on/off control (High: ON, Low: OFF) Ground Power supply input Voltage output NO CONNECT Cin 0.1F Co 2.2F Fig. 25 Power dissipation (Pd) 1. Power dissipation (Pd) Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption, and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX) PMAX = (VIN − VOUT) IOUT (MAX.) VIN : Input voltage VOUT : Output voltage IOUT (MAX): Max. output current 2. Power dissipation/power dissipation reduction (Pd) HVSOF5 0.6 Board: 70 mm 70 mm 1.6 mm Material: Glass epoxy PCB 0.4 Pd[W] 410 mW 0.2 0 0 25 50 75 100 125 Ta[℃] Fig. 26 HVSOF5 Power Dissipation/Power Dissipation Reduction (Example) *Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd. Input Output capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages. Typical ceramic capacitor characteristics 100 120 50 V tolerance 95 80 Capacitanc e rate of change [%] 100 Capac itance rate of change [% ] Capacitance rate of change [%] 100 120 50 V tolerance 90 60 85 10 V tolerance 40 80 16 V tolerance 20 10 V tolerance 16 V tolerance 75 0 70 0 1 2 DC bias Vdc[V] 3 4 Fig. 27 Capacitance vs Bias (Y5V) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. X7R X5R 80 Y5V 60 40 20 0 0 1 2 DC bias Vdc[V] 3 Fig. 28 Capacitance vs Bias (X5R, X7R) 5/8 4 - 25 0 25 Temp[℃] 50 75 Fig. 29 Capacitance vs Temperature (X5R, X7R, Y5V) 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers. BH□□NB1WHFV 100 COUT = 2.2 F Ta = +25°C ESR[ ] 10 1 Stable region 0.1 0.01 0 50 100 150 Output Current IOUT [mA] Fig. 30 Stable Operation Region (Example) Operation Notes 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 3. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 4. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. 5. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. 6. Action in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 7. Ground wiring pattern When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 6/8 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series 8. GND voltage The potential of GND pin must be minimum potential in all operating conditions. 9. Back Current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins. Back current VIN STBY OUT GND Fig. 31 Example Bypass Diode Connection 10. Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 11. Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Transistor (NPN) Resistor Pin A Pin B C Pin B B E Pin A N P+ N P+ P N N Parasitic element P+ P substrate Parasitic element GND B N P+ P N C E Parasitic element P substrate Parasitic element GND GND GND Other adjacent elements Fig. 32 Example of IC structure www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 7/8 2009.04 - Rev.A Technical Note BH□□NB1WHFV Series Ordering part number B H 3 Part No. 0 N Output voltage B 1 W Series NB1 : High ripple rejection H Shutdown switch W : Includes switch F V - Package HFV : HVSOF5 T R Packaging and forming specification TR: Embossed tape and reel HVSOF5 Embossed carrier tape 1.0±0.05 Quantity 3000pcs 4 (0.91) 4 5 (0.41) 5 0.2MAX Tape (0.3) (0.05) (0.8) Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 3 2 1 1 2 3 1pin 0.13±0.05 S +0.03 0.02 –0.02 1.6±0.05 0.6MAX 1.2±0.05 (MAX 1.28 include BURR) <Tape and Reel information> 1.6±0.05 0.1 S 0.5 0.22±0.05 0.08 Direction of feed M Reel (Unit : mm) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 8/8 ∗ Order quantity needs to be multiple of the minimum quantity. 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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