CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 72-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36) • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches • Echo clocks (CQ and CQ) simplify data capture in high-speed systems • Synchronous internally self-timed writes • 1.8V core power supply with HSTL inputs and outputs • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.4V–VDD) • Available in 165-ball FBGA package (15 x 17 x 1.4 mm) • Offered in lead-free and non lead-free packages • JTAG 1149.1 compatible test access port • Delay Lock Loop (DLL) for accurate data placement Configurations The CY7C1517V18, CY7C1528V18, CY7C1519V18 and CY7C1521V18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II (Double Data Rate) architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a two-bit burst counter. Addresses for Read and Write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with four 8-bit words in the case of CY7C1517V18 and four 9-bit words in the case of CY7C1528V18 that burst sequentially into or out of the device. The burst counter always starts with “00” internally in the case of CY7C1517V18 and CY7C1528V18. On CY7C1519V18 and CY7C1521V18, the burst counter takes in the last two significant bits of the external address and bursts four 18-bit words in the case of CY7C1519V18, and four 36-bit words in the case of CY7C1521V18, sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs, D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR-II SRAM in the system design.Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. All Synchronous Input Pass through input registers controlled by the K or K input clocks.All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. CY7C1517V18 – 8M x 8 CY7C1528V18 – 8M x 9 CY7C1519V18 – 4M x 18 CY7C1521V18 – 2M x 36 Selection Guide 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit Maximum Operating Frequency 300 278 250 200 167 MHz Maximum Operating Current 950 900 850 750 700 mA Cypress Semiconductor Corporation Document #: 38-05565 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 25, 2006 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Write Add. Decode CLK Gen. DOFF Write Reg Write Reg 2M x 8 Array K K Write Reg 2M x 8 Array LD Write Reg 2M x 8 Array 21 Address Register 2Mx 8 Array A(20:0) Read Add. Decode Logic Block Diagram (CY7C1517V18) 8 Output Logic Control R/W C C Read Data Reg. CQ 32 VREF R/W Reg. Control Logic NWS[1:0] 16 16 CQ Reg. Reg. 8 DQ[7:0] 8 Logic Block Diagram (CY7C1528V18) DOFF Read Add. Decode Write Reg 2M x 9 Array CLK Gen. Write Reg 2M x 9 Array K K Write Reg 2M x 9 Array LD Write Reg 2M x 9 Array 21 Address Register Write Add. Decode A(20:0) 9 Output Logic Control R/W C C Read Data Reg. CQ VREF R/W BWS[0] 36 Control Logic 18 Reg. 18 CQ Reg. Reg. 9 9 Document #: 38-05565 Rev. *E DQ[8:0] Page 2 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Logic Block Diagram (CY7C1519V18) Burst Logic A(1:0) 2 Write Reg Write Add. Decode Address A(21:2) Register LD K K CLK Gen. Write Reg Write Reg Write Reg Read Add. Decode 20 22 A(21:0) 4M x 18 Array DOFF 18 Output Logic Control R/W C C Read Data Reg. 72 VREF R/W BWS[1:0] 36 CQ Reg. Control Logic CQ 36 Reg. 18 Reg. DQ[17:0] 18 Logic Block Diagram (CY7C1521V18) Burst Logic A(1:0) 2 Address A(20:2) Register LD K K CLK Gen. DOFF Write Reg Write Add. Decode A(20:0) Write Reg Write Reg Write Reg Read Add. Decode 19 21 2M x 36 Array 36 R/W Output Logic Control C C Read Data Reg. CQ VREF R/W BWS[3:0] 144 Control Logic 72 Reg. 72 CQ Reg. 36 Reg. 36 Document #: 38-05565 Rev. *E DQ[35:0] Page 3 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Pin Configurations[1] 165-ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1517V18 (8M x 8) A B C D E F G H J K L M N P R 1 2 3 4 5 6 7 8 9 10 11 CQ NC A A R/W NWS1 K NC LD A A CQ NC NC A NC K NWS0 A NC NC DQ3 NC NC NC NC NC NC VSS VSS A A VSS VSS VSS NC VSS NC VSS NC NC NC NC NC NC DQ4 VDDQ VSS VSS VSS VDDQ NC NC DQ2 NC NC NC NC VDDQ VDD VSS VDDQ NC VREF NC DQ5 VDDQ NC VDDQ VDDQ VDDQ VDD VDD VDD VSS VSS VSS VDDQ VDDQ VDDQ NC NC VDDQ NC NC DOFF NC VDD VDD VDD VDD NC VREF DQ1 NC NC ZQ NC NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC NC NC DQ6 NC VDDQ VSS VSS VSS VDDQ NC NC DQ0 NC NC NC NC NC NC VSS VSS VSS A VSS A VSS A VSS VSS NC NC NC NC NC NC NC NC DQ7 A A C A A NC NC NC TDO TCK A A A C A A A TMS TDI CY7C1528V18 (8M x 9) A B C D E F G H J K L M N P R 1 2 3 4 5 6 7 8 9 10 11 CQ A A R/W NC K NC LD A A CQ NC NC NC A NC K A NC NC DQ3 NC NC NC NC NC NC VSS VSS A VSS NC VSS BWS0 A VSS VSS VSS NC NC NC NC NC NC NC NC DQ4 VDDQ VSS VSS VSS VDDQ NC NC DQ2 NC NC NC NC VDDQ VDD VSS VDD VDDQ NC NC DOFF NC NC VREF NC DQ5 VDDQ NC VDDQ VDDQ VDDQ VDD VDD VDD VSS VSS VSS VDD VDD VDD VDDQ VDDQ VDDQ NC NC VDDQ NC NC VREF DQ1 NC ZQ NC NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC NC DQ6 NC VDDQ VSS VSS VSS VDDQ NC NC DQ0 NC NC NC NC NC NC VSS VSS VSS A VSS A VSS A VSS VSS NC NC NC NC NC NC NC NC DQ7 A A C A A NC NC DQ8 TDO TCK A A A C A A A TMS TDI Note: 1. VSS/144M and VSS/288M are not connected to the die and can be tied to any voltage level. Document #: 38-05565 Rev. *E Page 4 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Pin Configurations[1] (continued) 165-ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1519V18 (4M x 18) A B C D E F G H J K L M N P R 1 2 3 4 5 6 7 8 9 10 11 CQ NC A A R/W BWS1 K NC LD A A CQ DQ9 NC A NC K NC NC DQ8 NC NC NC DQ10 VSS VSS A VSS VSS NC VSS A0 VSS BWS0 A1 VSS A NC NC NC DQ7 NC NC NC NC NC DQ11 VDDQ VSS VSS VSS VDDQ NC NC DQ6 NC NC DQ12 NC VDDQ VDD VSS VDD VDDQ DQ13 VDDQ NC VDDQ VDDQ VDDQ VDD VDD VDD VSS VSS VSS VDD VDD VDD VDDQ VDDQ VDDQ NC NC VDDQ NC NC NC VREF NC NC VREF DQ4 DQ5 NC ZQ NC NC NC DQ14 VDDQ VDD VSS VDD VDDQ NC NC DQ3 NC DQ15 NC VDDQ VSS VSS VSS VDDQ NC NC DQ2 NC NC NC NC NC DQ16 VSS VSS VSS A VSS A VSS A VSS VSS NC NC DQ1 NC NC NC NC NC DQ17 A A C A A NC NC DQ0 TDO TCK A A A C A A A TMS TDI DOFF NC CY7C1521V18 (2M x 36) A B C D E F G H J K L M N P R 1 2 3 CQ NC VSS/144M A 4 DQ27 DQ18 R/W A NC NC NC DQ29 DQ28 DQ19 NC NC DQ20 NC NC DQ30 DQ21 DOFF NC DQ31 VREF NC DQ22 VDDQ DQ32 NC NC DQ23 NC DQ33 NC NC 5 BWS2 6 K K 7 8 9 10 11 A A CQ LD A NC NC DQ8 A0 VSS BWS1 BWS0 A1 VSS VSS VSS NC NC DQ17 NC DQ7 DQ16 VSS VSS VSS VDDQ NC DQ15 DQ6 VDDQ VDD VSS VDD VDDQ DQ5 VDD VDD VDD VSS VSS VSS VDD VDD VDD VDDQ VDDQ VDDQ NC NC VDDQ NC NC VDDQ VDDQ VDDQ NC VREF DQ13 DQ14 ZQ DQ4 VDDQ VDD VSS VDD VDDQ NC DQ12 DQ3 DQ24 VDDQ VSS VSS VSS VDDQ NC NC DQ2 NC DQ35 DQ34 DQ25 VSS VSS VSS A VSS A VSS A VSS VSS NC NC DQ11 NC DQ1 DQ10 NC NC DQ26 A A C A A NC DQ9 DQ0 TDO TCK A A A C A A A TMS TDI Document #: 38-05565 Rev. *E VSS VSS BWS3 A VSS VDDQ Page 5 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Pin Definitions Pin Name I/O Pin Description DQ[x:0] Input/Output- Data Input/Output signals. Inputs are sampled on the rising edge of K and K clocks during valid Synchronous Write operations. These pins drive out the requested data during a Read operation. Valid data is driven out on the rising edge of both the C and C clocks during Read operations or K and K when in single clock mode. When Read access is deselected, Q[x:0] are automatically tri-stated. CY7C1517V18 - DQ[7:0] CY7C1528V18 - DQ[8:0] CY7C1519V18 - DQ[17:0] CY7C1521V18 - DQ[35:0] LD InputSynchronous Load. This input is brought LOW when a bus cycle sequence is to be defined. Synchronous This definition includes address and read/write direction. All transactions operate on a burst of 4 data (two clock periods of bus activity). NWS0, NWS1 InputNibble Write Select 0, 1 − active LOW (CY7C1517V18 only). Sampled on the rising edge of Synchronous the K and K clocks during Write operations. Used to select which nibble is written into the device during the current portion of the Write operations. Nibbles not written remain unaltered. NWS0 controls D[3:0] and NWS1 controls D[7:4]. All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select will cause the corresponding nibble of data to be ignored and not written into the device. InputByte Write Select 0, 1, 2, and 3 − active LOW. Sampled on the rising edge of the K and K clocks BWS0, BWS1, BWS2, BWS3 Synchronous during Write operations. Used to select which byte is written into the device during the current portion of the Write operations. Bytes not written remain unaltered. CY7C1528V18 − BWS0 controls D[8:0] CY7C1519V18− BWS0 controls D[8:0] and BWS1 controls D[17:9]. CY7C1521V18− BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select will cause the corresponding byte of data to be ignored and not written into the device. A, A0, A1 InputAddress Inputs. These address inputs are multiplexed for both Read and Write operations. Synchronous Internally, the device is organized as 8M x 8 (four arrays each of 2M x 8) for CY7C1517V18, 8M x 9 (four arrays each of 2M x 9) for CY7C1528V18, a single 4M x 18 array for CY7C1519V18, and a single 2M x 36 array for CY7C1521V18. CY7C1517V18 – Since the least two significant bits of the address internally are “00,” only 21 address inputs are needed to access the entire memory array. CY7C1528V18 – Since the least two significant bits of the address internally are “00,” only 21 address inputs are needed to access the entire memory array. CY7C1519V18 – A0 and A1 are the inputs to the burst counter. These are incremented in a linear fashion internally. 22 address inputs are needed to access the entire memory array. CY7C1521V18 – A0 and A1 are the inputs to the burst counter. These are incremented in a linear fashion internally. 21 address inputs are needed to access the entire memory array. All the address inputs are ignored when write access is deselected. R/W InputSynchronous Read/Write Input. When LD is LOW, this input designates the access type (Read Synchronous when R/W is HIGH, Write when R/W is LOW) for loaded address. R/W must meet the set-up and hold times around edge of K. C InputClock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the Read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details. C InputClock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the Read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details. K InputClock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K. K InputClock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode. Document #: 38-05565 Rev. *E Page 6 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Pin Definitions (continued) Pin Name I/O Pin Description CQ Clock Output CQ is referenced with respect to C. This is a free running clock and is synchronized to the Input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table. CQ Clock Output CQ is referenced with respect to C. This is a free running clock and is synchronized to the Input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table. Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternately, this pin can be connected directly to VDD, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. ZQ Input DOFF DLL Turn Off - active LOW. Connecting this pin to ground will turn off the DLL inside the device. The timings in the DLL turned off operation will be different from those listed in this data sheet. TDO Output TCK Input TCK pin for JTAG. TDI Input TDI pin for JTAG. TMS Input TMS pin for JTAG. NC N/A Not connected to the die. Can be tied to any voltage level. VSS/144M Input Address expansion for 144M. Can be tied to any voltage level. VSS/288M Input Address expansion for 288M. Can be tied to any voltage level. VREF VDD InputReference Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs as well as AC measurement points. Power Supply Power supply inputs to the core of the device. Ground VSS VDDQ TDO for JTAG. Ground for the device. Power Supply Power supply inputs for the outputs of the device. Functional Overview The CY7C1517V18, CY7C1528V18, CY7C1519V18, and CY7C1521V18 are synchronous pipelined Burst SRAMs equipped with a DDR interface. Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C or K/K when in single-clock mode). All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C or K/K when in single clock mode). All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K). CY7C1519V18 is described in the following sections. The same basic descriptions apply to CY7C1517V18, CY7C1528V18 and CY7C1521V18. Read Operations The CY7C1519V18 is organized internally as a 4M x 18 SRAM. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting Document #: 38-05565 Rev. *E R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to the Address inputs is stored in the Read address register and the least two significant bits of the address are presented to the burst counter. The burst counter increments the address in a linear fashion. Following the next K clock rise the corresponding 18-bit word of data from this address location is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C the next 18-bit data word from the address location generated by the burst counter is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data will be valid 0.45 ns from the rising edge of the output clock (C or C, or K or K when in single clock mode, 300-MHz, 250-MHz and 200-MHz device). In order to maintain the internal logic, each Read access must be allowed to complete. Each Read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, Read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device will ignore the second Read request. Read accesses can be initiated on every other K clock rise. Doing so will pipeline the data flow such that data is transferred out of the device on every rising edge of the output clocks (C/C or K/K when in single-clock mode). When read access is deselected, the CY7C1519V18 will first complete the pending read transactions. Synchronous internal circuitry will automatically tri-state the outputs following the next rising edge of the positive output clock (C). This will allow Page 7 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 for a seamless transition between devices without the insertion of wait states in a depth expanded memory. Write Operations Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to Address inputs are stored in the Write address register and the least two significant bits of the address are presented to the burst counter. The burst counter increments the address in a linear fashion. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit Write Data register provided BWS[1:0] are both asserted active. On the subsequent rising edge of the Negative Input Clock (K) the information presented to D[17:0] is also stored into the Write Data register provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, Write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device will ignore the second Write request. Write accesses can be initiated on every other rising edge of the positive input clock (K). Doing so will pipeline the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When write access is deselected, the device will ignore all inputs after the pending Write operations have been completed. Byte Write Operations Byte Write operations are supported by the CY7C1519V18. A Write operation is initiated as described in the Write Operation section above. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write will allow the data being presented to be latched and written into the device. Deasserting the Byte Write Select input during the data portion of a write will allow the data stored in the device for that byte to remain unaltered. This feature can be used to simplify Read/Modify/Write operations to a Byte Write operation. Single Clock Mode The CY7C1519V18 can be used with a single clock that controls both the input and output registers. In this mode the device will recognize only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power-on. This function is a strap option and not alterable during device operation. Document #: 38-05565 Rev. *E DDR Operation The CY7C1519V18 enables high-performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. The CY7C1519V18 requires a No Operation (NOP) cycle when transitioning from a Read to a Write cycle. At higher frequencies, some applications may require a second NOP cycle to prevent contention. If a Read occurs after a Write cycle, address and data for the Write are stored in registers. The write information must be stored because the SRAM can not perform the last word Write to the array without conflicting with the Read. The data stays in this register until the next Write cycle occurs. On the first Write cycle after the Read(s), the stored data from the earlier Write will be written into the SRAM array. This is called a Posted Write. Depth Expansion Depth expansion requires replicating the LD control signal for each bank. All other control signals can be common between banks as appropriate. Programmable Impedance An external resistor, RQ must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM, The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power-up to account for drifts in supply voltage and temperature. Echo Clocks Echo clocks are provided on the DDR-II to simplify data capture on high-speed systems. Two echo clocks are generated by the DDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free running clocks and are synchronized to the output clock of the DDR-II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table. DLL These chips utilize a Delay Lock Loop (DLL) that is designed to function between 80 MHz and the specified maximum clock frequency. During power-up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clock K and K for a minimum of 30 ns. However, it is not necessary for the DLL to be specifically reset in order to lock the DLL to the desired frequency. The DLL will automatically lock 1024 clock cycles after a stable clock is presented.the DLL may be disabled by applying ground to the DOFF pin. For information refer to the application note “DLL Considerations in QDRII™/DDRII/QDRII+/DDRII+”. Page 8 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Application Example[2] ZQ CQ/CQ# LD# R/W# C C# K K# SRAM#1 DQ A DQ Addresses Cycle Start# R/W# Return CLK Source CLK Return CLK# Source CLK# Echo Clock1/Echo Clock#1 Echo Clock2/Echo Clock#2 BUS MASTER (CPU or ASIC) DQ A R = 250ohms ZQ CQ/CQ# LD# R/W# C C# K K# SRAM#2 R = 250ohms Vterm = 0.75V R = 50ohms Vterm = 0.75V Truth Table[3, 4, 5, 6, 7, 8] Operation K LD R/W DQ DQ DQ DQ L-H Write Cycle: Load address; wait one cycle; input write data on four consecutive K and K rising edges. L L D(A1) at K(t + 1) ↑ D(A2) at K(t + 1) ↑ D(A3) at K(t + 2) ↑ D(A4) at K(t + 2) ↑ Read Cycle: L-H Load address; wait one and a half cycle; read data on four consecutive C and C rising edges. L H Q(A1) at C(t + 1) ↑ Q(A2) at C(t + 2) ↑ Q(A3) at C(t + 2) ↑ Q(A4) at C(t + 3) ↑ NOP: No Operation L-H H X High-Z High-Z High-Z High-Z Standby: Clock Stopped Stopped X X Previous State Previous State Previous State Previous State Linear Burst Address Table (CY7C1519V18 and CY7C1521V18) First Address (External) Second Address (Internal) Third Address (Internal) Fourth Address (Internal) X..X00 X..X01 X..X10 X..X11 X..X01 X..X10 X..X11 X..X00 X..X10 X..X11 X..X00 X..X01 X..X11 X..X00 X..X01 X..X10 Notes: 2. The above application shows 2 DDR-II being used. 3. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge. 4. Device will power-up deselected and the outputs in a tri-state condition. 5. On CY7C1519V18 and CY7C1521V18, “A1” represents address location latched by the devices when transaction was initiated and A2, A3, A4 represents the addresses sequence in the burst. On CY7C1517V18, “A1” represents A + ‘00’, A2 represents A + ‘01’, “A3” represents A + ‘10’ and “A4” represents A + ‘11’. 6. “t” represents the cycle at which a Read/Write operation is started. t+1, t + 2 and t +3 are the first, second and third clock cycles succeeding the “t” clock cycle. 7. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode. 8. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 9. Assumes a Write cycle was initiated per the Write Cycle Description Truth Table. NWS0, NWS1,BWS0, BWS1,BWS2, BWS3 can be altered on different portions of a write cycle, as long as the set-up and hold requirements are achieved. Document #: 38-05565 Rev. *E Page 9 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Write Cycle Descriptions(CY7C1517V18 and CY7C1528V18)[3, 9] BWS0,NWS0 BWS1,NWS1 K K – L L L-H L L – L H L-H L H – H L L-H H L – H H L-H H H – Document #: 38-05565 Rev. *E Comments During the Data portion of a Write sequence : CY7C1517V18 − both nibbles (D[7:0]) are written into the device, CY7C1528V18 − both bytes (D[17:0]) are written into the device. L-H During the Data portion of a Write sequence : CY7C1517V18 − both nibbles (D[7:0]) are written into the device, CY7C1528V18 − both bytes (D[17:0]) are written into the device. – During the Data portion of a Write sequence : CY7C1517V18 − only the lower nibble (D[3:0]) is written into the device. D[7:4] will remain unaltered, CY7C1528V18 − only the lower byte (D[8:0]) is written into the device. D[17:9] will remain unaltered. L-H During the Data portion of a Write sequence : CY7C1517V18 − only the lower nibble (D[3:0]) is written into the device. D[7:4] will remain unaltered, CY7C1528V18 − only the lower byte (D[8:0]) is written into the device. D[17:9] will remain unaltered. – During the Data portion of a Write sequence : CY7C1517V18 − only the upper nibble (D[7:4]) is written into the device. D[3:0] will remain unaltered, CY7C1528V18 − only the upper byte (D[17:9]) is written into the device. D[8:0] will remain unaltered. L-H During the Data portion of a Write sequence : CY7C1517V18 − only the upper nibble (D[7:4]) is written into the device. D[3:0] will remain unaltered, CY7C1528V18 − only the upper byte (D[17:9]) is written into the device. D[8:0] will remain unaltered. – No data is written into the devices during this portion of a Write operation. L-H No data is written into the devices during this portion of a Write operation. Page 10 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Write Cycle Descriptions (CY7C1519V18)[3, 9] BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L-H – During the Data portion of a Write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L-H During the Data portion of a Write sequence, all four bytes (D[35:0]) are written into the device. L H H H L-H – During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] will remain unaltered. L H H H – L-H During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] will remain unaltered. H L H H L-H – During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] will remain unaltered. H L H H – L-H During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] will remain unaltered. H H L H L-H – During the Data portion of a Write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] will remain unaltered. H H L H – L-H During the Data portion of a Write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] will remain unaltered. H H H L L-H H H H L – L-H During the Data portion of a Write sequence, only the byte (D[35:27]) is written into the device. D[26:0] will remain unaltered. H H H H L-H – No data is written into the device during this portion of a Write operation. H H H H – L-H No data is written into the device during this portion of a Write operation. During the Data portion of a Write sequence, only the byte (D[35:27]) is written into the device. D[26:0] will remain unaltered. Write Cycle Descriptions (CY7C1521V18)[3, 9] BWS0 K K Comments L L-H – During the Data portion of a Write sequence, the single byte (D[8:0]) is written into the device. L – L-H During the Data portion of a Write sequence, the single byte (D[8:0]) is written into the device. H L-H – No data is written into the device during this portion of a Write operation. H – L-H No data is written into the device during this portion of a Write operation. Document #: 38-05565 Rev. *E Page 11 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan test access port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-1900. The TAP operates using JEDEC standard 1.8V I/O logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. TDI and TDO pins as shown in TAP Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Test Access Port—Test Clock Boundary Scan Register The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. The boundary scan register is connected to all of the input and output pins on the SRAM. Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices. Test Mode Select The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this pin unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) The TDO output pin is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine (see Instruction codes). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a high-Z state. TAP Registers Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the Document #: 38-05565 Rev. *E The boundary scan register is loaded with the contents of the RAM Input and Output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and Output ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in the Instruction Code table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction Page 12 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High-Z state until the next command is given during the “Update IR” state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture set-up plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST The EXTEST instruction enables the preloaded data to be driven out through the system output pins. This instruction also selects the boundary scan register to be connected for serial access between the TDI and TDO in the shift-DR controller state. EXTEST Output Bus Tri-State IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The boundary scan register has a special bit located at bit #108. When this scan cell, called the “extest output bus tri-state”, is latched into the preload register during the “Update-DR” state in the TAP controller, it will directly control the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it will enable the output buffers to drive the output bus. When LOW, this bit will place the output bus into a High-Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the “Shift-DR” state. During “Update-DR”, the value loaded into that shift-register cell will latch into the preload register. When the EXTEST instruction is entered, this bit will directly control the output Q-bus pins. Note that this bit is pre-set HIGH to enable the output when the device is powered-up, and also when the TAP controller is in the “Test-Logic-Reset” state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required—that is, while data captured is shifted out, the preloaded data can be shifted in. Document #: 38-05565 Rev. *E Page 13 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 TAP Controller State Diagram[10] 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 1 1 SELECT DR-SCAN SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR SHIFT-IR 0 1 0 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-DR 0 0 PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR 1 0 UPDATE-IR 1 0 Note: 10. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05565 Rev. *E Page 14 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 TAP Controller Block Diagram 0 Bypass Register Selection Circuitry 2 TDI 1 0 1 0 Selection Circuitry TDO Instruction Register 31 30 29 . . 2 Identification Register 108 . . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range[16, 18, 11] Parameter Description Test Conditions Min. Max. Unit VOH1 Output HIGH Voltage IOH = −2.0 mA 1.4 V VOH2 Output HIGH Voltage IOH = −100 µA 1.6 V VOL1 Output LOW Voltage IOL = 2.0 mA 0.4 V VOL2 Output LOW Voltage IOL = 100 µA 0.2 V VIH Input HIGH Voltage 0.65VDD VDD + 0.3 V VIL Input LOW Voltage –0.3 0.35VDD V IX Input and OutputLoad Current –5 5 µA GND ≤ VI ≤ VDD TAP AC Switching Characteristics Over the Operating Range[12, 13] Parameter Description Min. Max. Unit 20 MHz tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency 50 ns tTH TCK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns tTMSS TMS Set-up to TCK Clock Rise 5 ns tTDIS TDI Set-up to TCK Clock Rise 5 ns tCS Capture Set-up to TCK Rise 5 ns Set-up Times Notes: 11. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table. 12. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 13. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns. Document #: 38-05565 Rev. *E Page 15 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 TAP AC Switching Characteristics Over the Operating Range[12, 13] (continued) Parameter Description Min. Max. Unit Hold Times tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns TAP Timing and Test Conditions[13] 0.9V 50Ω ALL INPUT PULSES TDO 1.8V Z0 = 50Ω 0.9V CL = 20 pF 0V tTH (a) tTL GND Test Clock TCK tTCYC tTMSS tTMSH Test Mode Select TMS tTDIS tTDIH Test Data-In TDI Test Data-Out TDO tTDOV Document #: 38-05565 Rev. *E tTDOX Page 16 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Identification Register Definitions Value Instruction Field CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Description Revision Number (31:29) 000 000 000 000 Version number. Cypress Device ID 11010100011000100 11010100011001100 (28:12) Cypress JEDEC ID (11:1) 11010100011010100 11010100011100100 Defines the type of SRAM. 00000110100 00000110100 00000110100 00000110100 Allows unique identification of SRAM vendor. 1 1 1 1 Indicate the presence of an ID register. ID Register Presence (0) Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 109 Instruction Codes Instruction Code Description EXTEST 000 Captures the Input/Output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 38-05565 Rev. *E Page 17 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C 71 1D 99 2N 16 9N 44 9B 72 2C 100 2P 17 11L 45 10B 73 3E 101 1P 18 11M 46 11A 74 2D 102 3R 19 9L 47 10A 75 2E 103 4R 20 10L 48 9A 76 1E 104 4P 21 11K 49 8B 77 2F 105 5P 22 10K 50 7C 78 3F 106 5N 23 9J 51 6C 79 1G 107 5R 24 9K 52 8A 80 1F 108 Internal 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1H Document #: 38-05565 Rev. *E Page 18 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Power-Up Sequence in DDR-II SRAM[14, 15] DDR-II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. Power-Up Sequence • Apply power and drive DOFF LOW (All other inputs can be HIGH or LOW) — Apply VDD before VDDQ — Apply VDDQ before VREF or at the same time as VREF DLL Constraints • DLL uses either K or C clock as its synchronizing input.The input should have low phase jitter, which is specified as tKC Var. • The DLL will function at frequencies down to 80 MHz. • If the input clock is unstable and the DLL is enabled, then the DLL may lock to an incorrect frequency, causing unstable SRAM behavior. • After the power and clock (K, K, C, C) are stable take DOFF HIGH • The additional 1024 cycles of clocks are required for the DLL to lock. ~ ~ Power-up Waveforms K K ~ ~ Unstable Clock > 1024 Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix High (or tied to VDDQ) Notes: 14. It is recommended that the DOFF pin be pulled HIGH via a pull up resistor of 1 Kohm. 15. During Power-Up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock. Document #: 38-05565 Rev. *E Page 19 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Maximum Ratings Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage (MIL-STD-883, M 3015)... > 2001V (Above which the useful life may be impaired.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied .. –55°C to +125°C Supply Voltage on VDD Relative to GND........ –0.5V to +2.9V Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD DC Applied to Outputs in High-Z......... –0.5V to VDDQ + 0.3V DC Input Voltage[16] ...............................–0.5V to VDD + 0.3V Electrical Characteristics Over the Operating Range[18] Latch-up Current.................................................... > 200 mA Operating Range Range Com’l Ind’l Ambient Temperature VDD[17] VDDQ[17] 0°C to +70°C 1.8 ± 0.1V 1.4V to VDD –40°C to +85°C DC Electrical Characteristics Over the Operating Range Parameter Description Test Conditions Min. Typ. Max. Unit VDD Power Supply Voltage 1.7 1.8 1.9 V VDDQ I/O Supply Voltage 1.4 1.5 VDD V VOH Output HIGH Voltage Note 19 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOL Output LOW Voltage Note 20 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOH(LOW) Output HIGH Voltage IOH = −0.1 mA, Nominal Impedance VDDQ – 0.2 VDDQ V VOL(LOW) Output LOW Voltage IOL = 0.1 mA, Nominal Impedance VSS 0.2 V VIH Input HIGH Voltage[16] VREF + 0.1 VDDQ + 0.3 V VIL Input LOW Voltage[16] –0.3 VREF – 0.1 V IX Input Leakage Current GND ≤ VI ≤ VDDQ –5 5 µA IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5 µA Voltage[21] VREF Input Reference IDD VDD Operating Supply ISB1 Automatic Power-down Current Typical Value = 0.75V VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC Max. VDD, both ports Deselected, VIN ≥ VIH or VIN ≤ VIL, f = fMAX = 1/tCYC, Inputs Static 0.95 V 167 MHz 0.68 0.75 700 mA 200 MHz 750 mA 250 MHz 850 mA 278 MHz 900 mA 300 MHz 950 mA 167 MHz 340 mA 200 MHz 360 mA 250 MHz 380 mA 278 MHz 390 mA 300 MHz 400 mA AC Input Requirements Over the Operating Range Min. Typ. Max. Unit VIH Parameter Input High (Logic 1) Voltage Description Test Conditions VREF + 0.2 – – V VIL Input Low (Logic 0) Voltage – – VREF – 0.2 V Notes: 16. Overshoot: VIH(AC) < VDD+0.85V (Pulse width less than tTCYC/2); Undershoot VIL(AC) > −1.5V (Pulse width less than tTCYC/2). 17. Power-up: Assumes a linear ramp from 0V to VDD(Min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 18. All voltage referenced to ground. 19. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω. 20. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω. 21. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller. Document #: 38-05565 Rev. *E Page 20 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Capacitance[22] Parameter Description Test Conditions CIN Input Capacitance CCLK Clock Input Capacitance CO Output Capacitance TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V Max. Unit 5.5 pF 8.5 pF 8 pF 165 FBGA Package Unit 16.2 °C/W 2.3 °C/W Thermal Resistance[22] Parameter Description Test Conditions ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. AC Test Loads and Waveforms VREF = 0.75V VREF 0.75V VREF OUTPUT Z0 = 50Ω Device Under Test RL = 50Ω VREF = 0.75V ZQ RQ = 250Ω 0.75V R = 50Ω ALL INPUT PULSES 1.25V 0.75V OUTPUT Device Under Test ZQ 5 pF [23] 0.25V Slew Rate = 2 V/ns RQ = 250Ω (a) (b) Notes: 22. Tested initially and after any design or process change that may affect these parameters. 23. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads. Document #: 38-05565 Rev. *E Page 21 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Switching Characteristics Over the Operating Range [23, 24] 300 MHz Cypress Consortium Parameter Parameter Description VDD(Typical) to the first Access[25] tPOWER 278 MHz 250 MHz 200 MHz 167 MHz Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit 1 1 1 1 1 ms tCYC tKHKH K Clock and C Clock Cycle Time 3.30 5.25 3.60 5.25 4.0 6.3 5.0 7.9 6.0 8.4 ns tKH tKHKL Input Clock (K/K and C/C) HIGH 1.32 1.6 – 2.0 – 2.4 – ns tKL tKLKH Input Clock (K/K and C/C) LOW 1.32 1.6 – 2.0 – 2.4 – ns tKHKH tKHKH K Clock Rise to K Clock Rise 1.49 and C to C Rise (rising edge to rising edge) tKHCH tKHCH K/K Clock Rise to C/C Clock Rise (rising edge to rising edge) – 1.4 – 1.4 – 1.6 – 1.8 – 2.2 – 2.7 – ns 0.0 1.45 0.0 1.55 0.0 1.8 0.0 2.2 0.0 2.7 ns Set-up Times tSA tAVKH Address Set-up to K Clock Rise 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns tSC tIVKH Control Set-up to Clock (K, K) Rise (LD, R/W) 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns tSCDDR tIVKH Double Data Rate Control Set-up to Clock (K, K) Rise (BWS0, BWS1, BWS2, BWS3) 0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns tSD[26] tDVKH D[X:0] Set-up to Clock (K and K) Rise 0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns Hold Times tHA tKHAX Address Hold after K Clock Rise 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns tHC tKHIX Control Hold after Clock (K and K) Rise (LD, R/W) 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns tHCDDR tKHIX Double Data Rate Control 0.30 Hold after Clock (K and K) Rise (BWS0, BWS1, BWS2, BWS3) – 0.30 – 0.35 – 0.4 – 0.5 – ns tHD tKHDX D[X:0] Hold after Clock (K and K) Rise – 0.30 – 0.35 – 0.4 – 0.5 – ns 0.30 Notes: 24. All devices can operate at clock frequencies as low as 119 MHz. When a part with a maximum frequency above 133 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and will output data with the output timings of that frequency range. 25. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a read or write operation can be initiated. 26. For DQ0 data signal on CY7C1528V18 device, tSD is 0.5 ns for 200 MHz, 250 MHz, 278 MHz and 300 MHz frequencies. Document #: 38-05565 Rev. *E Page 22 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Switching Characteristics Over the Operating Range (continued)[23, 24] 300 MHz Cypress Consortium Parameter Parameter Description 278 MHz 250 MHz 200 MHz 167 MHz Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Output Times tCO tCHQV C/C Clock Rise (or K/K in single clock mode) to Data Valid tDOH tCHQX tCCQO – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns Data Output Hold after Output C/C Clock Rise (Active to Active) –0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns tCHCQV C/C Clock Rise to Echo Clock Valid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns tCQOH tCHCQX Echo Clock Hold after C/C Clock Rise –0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns tCQD tCQHQV Echo Clock High to Data Valid – 0.27 – 0.27 – 0.30 – 0.35 – 0.40 ns tCQDOH tCQHQX Echo Clock High to Data Invalid –0.27 – –0.27 – –0.30 – –0.35 – –0.40 – ns tCHZ tCHQZ Clock (C and C) Rise to High-Z (Active to High-Z)[27, 28] – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns tCLZ tCHQX1 Clock (C and C) Rise to Low-Z[27, 28] –0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns – 0.20 – 0.20 – 0.20 – 0.20 – 0.20 ns – 1024 – 1024 – 1024 – 1024 – Cycles DLL Timing tKC Var tKC Var Clock Phase Jitter tKC lock tKC lock DLL Lock Time (K, C) 1024 tKC Reset tKC Reset K Static to DLL Reset 30 30 30 30 30 ns Notes: 27. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage. 28. At any given voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. Document #: 38-05565 Rev. *E Page 23 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Switching Waveforms[29, 30, 31] NOP READ (burst of 4) 3 2 1 READ (burst of 4) 5 4 NOP NOP 6 7 WRITE (burst of 4) 9 8 WRITE (burst of 4) 11 10 READ (burst of 4) 13 12 K t KH t KL t CYC t KHKH K LD t SC t HC tCO R/W A A0 A1 A3 A2 t SA t HA t HD t HD t SD t SD DQ Q00 Q01 Q02 tDOH tKHCH Q03 Q11 Q12 D20 D21 D22 D23 D30 D31 D32 D33 Q13 tCQD tCO t CLZ Q10 A4 tCQDOH t CHZ C tKH tKHCH tKL t CYC t KHKH C tCQOH tCCQO CQ tCQOH tCCQO CQ DON’T CARE UNDEFINED Notes: 29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1. 30. Output are disabled (High-Z) one clock cycle after a NOP. 31. In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document #: 38-05565 Rev. *E Page 24 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 167 Ordering Code CY7C1517V18-167BZC Package Diagram Operating Range Package Type 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1528V18-167BZC CY7C1519V18-167BZC CY7C1521V18-167BZC CY7C1517V18-167BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-167BZXC CY7C1519V18-167BZXC CY7C1521V18-167BZXC CY7C1517V18-167BZI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1528V18-167BZI CY7C1519V18-167BZI CY7C1521V18-167BZI CY7C1517V18-167BZXI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-167BZXI CY7C1519V18-167BZXI CY7C1521V18-167BZXI 200 CY7C1517V18-200BZC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1528V18-200BZC CY7C1519V18-200BZC CY7C1521V18-200BZC CY7C1517V18-200BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-200BZXC CY7C1519V18-200BZXC CY7C1521V18-200BZXC CY7C1517V18-200BZI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1528V18-200BZI CY7C1519V18-200BZI CY7C1521V18-200BZI CY7C1517V18-200BZXI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-200BZXI CY7C1519V18-200BZXI CY7C1521V18-200BZXI 250 CY7C1517V18-250BZC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1528V18-250BZC CY7C1519V18-250BZC CY7C1521V18-250BZC CY7C1517V18-250BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-250BZXC CY7C1519V18-250BZXC CY7C1521V18-250BZXC Document #: 38-05565 Rev. *E Page 25 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Ordering Information (continued) Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 250 Ordering Code CY7C1517V18-250BZI Package Diagram Operating Range Package Type 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1528V18-250BZI CY7C1519V18-250BZI CY7C1521V18-250BZI CY7C1517V18-250BZXI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-250BZXI CY7C1519V18-250BZXI CY7C1521V18-250BZXI 278 CY7C1517V18-278BZC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1528V18-278BZC CY7C1519V18-278BZC CY7C1521V18-278BZC CY7C1517V18-278BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-278BZXC CY7C1519V18-278BZXC CY7C1521V18-278BZXC CY7C1517V18-278BZI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1528V18-278BZI CY7C1519V18-278BZI CY7C1521V18-278BZI CY7C1517V18-278BZXI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-278BZXI CY7C1519V18-278BZXI CY7C1521V18-278BZXI 300 CY7C1517V18-300BZC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1528V18-300BZC CY7C1519V18-300BZC CY7C1521V18-300BZC CY7C1517V18-300BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-300BZXC CY7C1519V18-300BZXC CY7C1521V18-300BZXC CY7C1517V18-300BZI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1528V18-300BZI CY7C1519V18-300BZI CY7C1521V18-300BZI CY7C1517V18-300BZXI 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1528V18-300BZXI CY7C1519V18-300BZXI CY7C1521V18-300BZXI Document #: 38-05565 Rev. *E Page 26 of 28 CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Package Diagram 165-ball FBGA (15 x 17 x 1.40 mm) (51-85195) "/44/-6)%7 4/06)%7 0).#/2.%2 -# -#!" 0).#/2.%2 8 ! " " # # ! $ $ & & ' ' ( * % ¼ % ( * + , , + - - . . 0 0 2 2 ! " ¼ # ¼ ¼ # 8 ./4%3 3/,$%20!$490%./.3/,$%2-!3+$%&).%$.3-$ 0!#+!'%7%)'(4G *%$%#2%&%2%.#%-/$%3)'.# 0!#+!'%#/$%""!$ -!8 3%!4).'0,!.% # 51-85195-*A QDR SRAMs and Quad Data Rate SRAMs comprise a new family of products developed by Cypress, Hitachi, IDT, Micron, NEC and Samsung technology. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05565 Rev. *E Page 27 of 28 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 Document History Page Document Title: CY7C1517V18/CY7C1528V18/CY7C1519V18/CY7C1521V18 72-Mbit DDR-II SRAM 4-Word Burst Architecture Document Number: 38-05565 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 226981 See ECN DIM New Data Sheet *A 257089 See ECN NJY Modified ID code for the x9 option in the JTAG ID Register Definitions table on page 21 Corrected typo in the part numbers in the title; part number CY7C1519V18 changed to CY7C1528V18,part number CY7C1521V18 changed to CY7C1519V18 and part number CY7C1528V18 changed to CY7C1521V18 Corrected “Switching Waveforms” diagram Included thermal values Modified capacitance values table: included capacitance values for x8, x18 and x36 options *B 319496 See ECN SYT Removed CY7C1528V18 from the title Included 300-MHz Speed Bin Added footnote #1 and accordingly edited the VSS/144M And VSS/288M on the Pin Definitions table Added Industrial Temperature Grade Replaced TBDs for IDD and ISB1 for 300 MHz, 250 MHz, 200 MHz and 167 MHz speed grades Changed the CIN from 5 pF to 5.5 pF and CO from 7 pF to 8 pF in the Capacitance Table Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS TRI-STATE on Page 17 Removed the capacitance value column for the x9 option from Capacitance Table Added lead-free product information Updated the Ordering Information by Shading and unshading as per availability *C 409515 See ECN NXR Added CY7C1528V18 part number to title Added 278-MHz speed Bin Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed C, C Description in Feature Section and Pin Description Added power-up sequence details and waveforms Added foot notes #14, 15, 16 On page# 19 Replaced Three-state with Tri-state Changed the description of IX from Input Load Current to Input Leakage Current on page# 19 Modified the IDD and ISB current values Modified test condition in Footnote #18 on page# 20 from VDDQ < VDD to VDDQ < VDD Replaced Package Name column with Package Diagram in the Ordering Information table *D 467290 See ECN NXR Converted from Preliminary to Final Modified the ZQ Definition from Alternately, this pin can be connected directly to VDD to Alternately, this pin can be connected directly to VDDQ Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC Switching Characteristics table Modified Power-Up waveform Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C to +85°C to –55°C to +125°C Added additional notes in the AC parameter section Modified AC Switching Waveform Corrected the typo In the AC Switching Characteristics Table Updated the Ordering Information Table *E 505682 See ECN VKN Corrected typo in the Functional Description section for burst counter logic Document #: 38-05565 Rev. *E Page 28 of 28