BPV10 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity 94 8390 • Suitable for visible and near infrared radiation • High bandwidth: 250 MHz at VR = 12 V • Fast response times DESCRIPTION • Angle of half sensitivity: ϕ = ± 20° BPV10 is a PIN photodiode with high speed and high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • High speed photo detector PRODUCT SUMMARY Ira (mA) ϕ (deg) λ0.1 (nm) 70 ± 20 380 to 1100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ COMPONENT BPV10 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPV10 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature SYMBOL VALUE VR 10 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from body Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 334 For technical questions, contact: [email protected] Document Number: 81502 Rev. 1.6, 08-Sep-08 BPV10 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current IF = 50 mA VF IR = 100 µA, E = 0 V(BR) MIN. TYP. MAX. 1.0 1.3 UNIT V 60 V VR = 20 V, E = 0 Iro 1 VR = 0 V, f = 1 MHz, E = 0 CD 11 pF VR = 5 V, f = 1 MHz, E = 0 CD 3.8 pF 5 nA EA = 1 klx VO 480 mV Ee = 1 mW/cm2, λ = 950 nm VO 450 mV EA = 1 klx IK 80 µA Ee = 1 Reverse light current SYMBOL mW/cm2, λ = 950 nm IK 65 µA EA = 1 klx, VR = 5 V Ira 85 µA Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 70 µA VR = 5 V, λ = 950 nm Absolute spectral sensitivity 38 s(λ) 0.55 A/W Angle of half sensitivity ϕ ± 20 deg Wavelength of peak sensitivity λp 920 nm nm λ0.1 380 to 1100 λ = 950 nm η 72 % Noise equivalent power VR = 20 V, λ = 950 nm NEP 3 x 10-14 W/√Hz Detectivity VR = 20 V, λ = 950 nm D 3 x 1012 cm√Hz/W Rise time VR = 50 V, RL = 50 Ω, λ = 820 nm tr 2.5 ns Fall time VR = 50 V, RL = 50 Ω, λ = 820 nm tf 2.5 ns Range of spectral bandwidth Quantum efficiency Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 20 V 1 20 94 8436 40 60 80 Fig. 1 - Reverse Dark Current vs. Ambient Temperature VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Tamb - Ambient Temperature (°C) Document Number: 81502 Rev. 1.6, 08-Sep-08 1.4 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 335 BPV10 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors S ( λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.1 Ira - Reverse Light Current (µA) 0.6 0.4 0.2 0 350 550 750 1150 950 λ - Wavelength (nm) 94 8440 Fig. 3 - Reverse Light Current vs. Irradiance 100 0.8 10 1 E e - Irradiance (mW/cm 2) 94 8437 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 λ = 950 nm 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 0.02 mW/cm2 ϕ - Angular Displacement 0.1 0.01 Srel - Relative Sensitivity Ira - Reverse Light Current (µA) 1000 80° 1 0.1 1 100 10 0.6 0.4 0.2 0 94 8624 VR - Reverse Voltage (V) 94 8438 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 12 10 E=0 f = 1 MHz 8 6 4 2 0 0.1 94 8439 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 336 For technical questions, contact: [email protected] Document Number: 81502 Rev. 1.6, 08-Sep-08 BPV10 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C ± 0.15 Chip position R 2.45 (sphere) ± 0.15 7.6 ± 0.3 8.6 + 0.2 - 0.1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 Area not plane 0.5 + 0.15 1.5 ± 0.25 1 0.8 < 0.7 34.8 ± 0.5 11.8 ± 0.3 (4.3) Ø5 A 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5185.02-4 Issue:1; 01.07.96 96 12199 Document Number: 81502 Rev. 1.6, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 337 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1