CYSTEKEC BTC4081S3S

CYStech Electronics Corp.
Spec. No. : C202S3S
Issued Date : 2002.05.11
Revised Date : 2006.08.17
Page No. : 1/5
General Purpose NPN Epitaxial Planar Transistor
BTC4081S3S
Description
• The BTC4081S3S is designed for using in driver stage of AF amplifier and general purpose
amplification.
• Low Cob, Typ. Cob=2.0pF
• Complementary to BTA1576S3S
• Pb-free package
Symbol
Outline
SOT-323
BTC4081S3S
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTC4081S3S
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
60
50
7
150
225
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202S3S
Issued Date : 2002.05.11
Revised Date : 2006.08.17
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
60
50
7
180
80
-
Typ.
0.2
180
2
Max.
0.1
0.1
0.4
560
3.5
Unit
V
V
V
μA
μA
V
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
MHz
pF
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
R
180-390
S
270-560
Ordering Information
Device
BTC4081S3S
BTC4081S3S
Package
SOT-323
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
1F
CYStek Product Specification
Spec. No. : C202S3S
Issued Date : 2002.05.11
Revised Date : 2006.08.17
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
[email protected]=6V
Current Gain---HFE
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
100
100
10
0.1
1
10
100
Collector Current --- IC(mA)
1000
0.1
Saturation Voltage vs Collector Current
1
10
100
Collector Current --- IC(mA)
1000
Cutoff Frequency vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=12V
0.1
100
0.1
1
10
100
Collector Current --- IC(mA)
1000
1
10
100
Collector Current --- IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTC4081S3S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202S3S
Issued Date : 2002.05.11
Revised Date : 2006.08.17
Page No. : 4/5
Reel Dimension
Carrier Tape Dimension
BTC4081S3S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202S3S
Issued Date : 2002.05.11
Revised Date : 2006.08.17
Page No. : 5/5
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
Lp
2
TE
1F
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
2 mm
1
Style: Pin 1.Base 2.Emitter 3.Collector
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4081S3S
CYStek Product Specification