isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed APPLICATIONS ·Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VCER VEBO PARAMETER VALUE BUX82 800 BUX83 1000 BUX82 400 BUX83 450 BUX82 500 BUX83 500 Collector-Emitter Voltage V Collector-Emitter Voltage Collector-Emitter Voltage RBE= 50Ω UNIT V V Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ MAX UNIT 1.65 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CER VCE(sat)-1 VCE(sat)-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage CONDITIONS BUX82 MIN TYP. MAX UNIT 400 IC= 100mA ; IB= 0; L= 25mH V BUX83 450 BUX82 500 IC= 100mA ; RBE= 100Ω; L= 15mH BUX83 V 500 BUX82 3.0 IC= 4A; IB= 1.25A V B BUX83 1.6 BUX82 1.5 IC= 2.5A; IB= 0.5A V BUX83 1.4 VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A 1.6 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V BUX82 VCES=800V; VBE(off)= 1.5V VCES=800V; VBE(off)= 1.5V,TC=125℃ 1.0 2.0 BUX83 VCES=1000V;VBE(off)=1.5V VCES=1000V;VBE(off)=1.5V,TC=125℃ 1.0 2.0 10 mA 500 pF ICES Collector Cutoff Current B IEBO Emitter Cutoff Current VEB= 10V; IC=0 hFE DC Current Gain IC= 1.2A ; VCE= 5V COB Output Capacitance IE= 0;VCB= 10V;ftest= 1MHz Current-Gain--Bandwidth Product IC= 0.2A ; VCE= 10V ;ftest= 1MHz fT mA 30 6 MHz Switching Times ton Turn-On Time tstg Storage Time tf IC= 2.5A; IB1= 0.5A;IB2= -1A; VCC= 250V Fall Time isc Website：www.iscsemi.cn 0.3 0.5 μs 2.0 3.5 μs 0.3 2 μs