VISHAY BYT41

BYT41
Vishay Telefunken
Fast Soft Recovery Rectifier
Features
D
D
D
D
D
D
Controlled avalanche characteristics
Miniature axial leaded
Glass passivated
Hermetically sealed glass envelope
Low reverse current
High reverse voltage
95 10526
Applications
General purpose rectifier
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
Test Conditions
Type
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
tp=8.3 ms, half sinewave
Lead length l = 10 mm,
TL = 25°C
I(BR)R=1A, inductive load
Symbol
VR
=VRRM
IFSM
IFAV
Value
50
100
200
400
600
800
1000
30
1.25
Unit
V
V
V
V
V
V
V
A
A
ER
10
mJ
Tj=Tstg
–55...+175
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 86024
Rev. 3, 24-Jun-98
Test Conditions
Lead length l = 10 mm, TL = constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
60
110
Unit
K/W
K/W
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BYT41
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Test Conditions
IF = 1 A
VR=VRRM
VR=VRRM, Tj=150°C
IR=100mA
Reverse breakdown
voltage
Reverse recovery time
Type
Symbol
VF
IR
IR
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
trr
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
IF=0.5A, IR=1A, iR=0.25A
Min
Typ
Max
1.1
5
150
50
100
200
400
600
800
1000
2
Unit
V
mA
mA
V
V
V
V
V
V
V
ms
120
2.0
I FAV– Average Forward Current ( A )
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Characteristics (Tj = 25_C unless otherwise specified)
100
96 12151
80
60
l
l
40
20
1.6
1.4
1.2
1.0
0.8
0
5
10
15
20
25
BYT41M
0.4
0.2
0
30
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
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BYT41A
0.6
TL=constant
0
v
v
VR = VR RM
f 1kHz
RthJA 110K/W
PC Board
1.8
0
96 12135
20
40
60
80 100 120 140 160 180
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
Document Number 86024
Rev. 3, 24-Jun-98
BYT41
Vishay Telefunken
100.000
v
v
VR = VR RM
f 1kHz
RthJA 60K/W
l=10mm
1.8
1.6
1.4
10.000
I F – Forward Current ( A )
I FAV– Average Forward Current ( A )
2.0
1.2
1.0
0.8
BYT41A
0.6
BYT41M
0.4
Tj = 175°C
1.000
Tj = 25°C
0.100
0.010
0.2
0
0.001
0
20
40
60
80 100 120 140 160 180
0
Tamb – Ambient Temperature ( °C )
96 12136
96 12134
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VF – Forward Voltage ( V )
Figure 5. Max. Forward Current vs. Forward Voltage
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
I R – Reverse Current ( mA )
VR = VRRM
100
10
1
25
96 12137
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
Figure 4. Max. Reverse Current vs.
Junction Temperature
Dimensions in mm
Standard Glass Case
DOT 30 B
Weight max. 0.5 g
∅ 3 max.
Cathode Identification
95 10524
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
Document Number 86024
Rev. 3, 24-Jun-98
4.2 max.
26 min.
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BYT41
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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4 (4)
Document Number 86024
Rev. 3, 24-Jun-98