isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV50 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage (VBE= -1.5V) 250 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 6 A IBM Base Current-peak 12 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV50 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.5A IC= 10A; IB= 0.5A;TC= 100℃ 0.8 0.9 V VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A IC= 20A; IB= 2A;TC= 100℃ 0.9 1.5 V Base-Emitter Saturation Voltage IC= 20A ;IB= 2A IC= 20A; IB= 2A;TC= 100℃ 1.6 1.7 V ICER Collector Cutoff Current VCE= VCEV; RBE= 10Ω VCE= VCEV; RBE= 10Ω; TC=100℃ 1.0 5.0 mA ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 10A ; VCE= 4V 0.6 μs 1.2 μs 0.3 μs VBE(sat) CONDITIONS MIN MAX UNIT 125 V 7 V 20 Switching times Resistive Load tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 24A; IB1= 3A; VCC= 100V VBB= -5V, RB= 0.83Ω; tp= 30μs