ONSEMI BZX84CXXXET3G

BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
3
Cathode
Specification Features
•
•
•
•
•
•
•
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1
Anode
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
Pb−Free Packages are Available
3
1
2
SOT−23
CASE 318
STYLE 8
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx M G
G
1
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
RqJA
PD
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to
+150
°C
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BZX84CxxxET1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
BZX84CxxxET1G
BZX84CxxxET3
BZX84CxxxET3G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
July, 2009 − Rev. 6
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
C
IF
Parameter
VZ
QVZ
I
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
Zener Voltage Regulator
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2
V
BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ1 (V)
@ IZT1 = 5 mA
(Note 4)
Device
Marking
Min
Nom
Max
ZZT1
(W)
@ IZT1
=
5 mA
BZX84C2V4ET1, G
BA1
2.2
2.4
2.6
BZX84C2V7ET1, G
BA2
2.5
2.7
2.9
BZX84C3V0ET1, G
BA3
2.8
3.0
BZX84C3V3ET1, G
BA4
3.1
BZX84C3V6ET1, G
BA5
BZX84C3V9ET1, G
VZ2 (V)
@ IZT2 = 1
mA
(Note 4)
Min
Max
ZZT2
(W)
@ IZT2
=
1 mA
100
1.7
2.1
100
1.9
2.4
3.2
95
2.1
3.3
3.5
95
3.4
3.6
3.8
BA6
3.7
3.9
BZX84C4V3ET1, G
BA7
4.0
BZX84C4V7ET1, G
BA9
4.4
BZX84C5V1ET1, G
BB1
BZX84C5V6ET1, G
VZ3 (V)
@ IZT3=20 mA
(Note 4)
Max
Reverse
Leakage
Current
qVZ
C (pF)
(mV/k)
@
@ IZT1=5 mA
VR = 0
f=
Min Max 1 MHz
Min
Max
ZZT3
(W)
@
IZT3=
20 mA
600
2.6
3.2
50
50
1.0
−3.5
0
450
600
3.0
3.6
50
20
1.0
−3.5
0
450
2.7
600
3.3
3.9
50
10
1.0
−3.5
0
450
2.3
2.9
600
3.6
4.2
40
5.0
1.0
−3.5
0
450
90
2.7
3.3
600
3.9
4.5
40
5.0
1.0
−3.5
0
450
4.1
90
2.9
3.5
600
4.1
4.7
30
3.0
1.0
−3.5
−2.5
450
4.3
4.6
90
3.3
4.0
600
4.4
5.1
30
3.0
1.0
−3.5
0
450
4.7
5.0
80
3.7
4.7
500
4.5
5.4
15
3.0
2.0
−3.5
0.2
260
4.8
5.1
5.4
60
4.2
5.3
480
5.0
5.9
15
2.0
2.0
−2.7
1.2
225
BB2
5.2
5.6
6.0
40
4.8
6.0
400
5.2
6.3
10
1.0
2.0
−2
2.5
200
BZX84C6V2ET1, G
BB3
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3.0
4.0
0.4
3.7
185
BZX84C6V8ET1, G
BB4
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2.0
4.0
1.2
4.5
155
BZX84C7V5ET1, G
BB5
7.0
7.5
7.9
15
6.9
7.9
80
7.0
8.0
6
1.0
5.0
2.5
5.3
140
BZX84C8V2ET1, G
BB6
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5.0
3.2
6.2
135
BZX84C9V1ET1, G
BB7
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6.0
3.8
7.0
130
BZX84C10ET1, G
BB8
9.4
10
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7.0
4.5
8.0
130
BZX84C11ET1, G
BB9
10.4
11
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8.0
5.4
9.0
130
BZX84C12ET1, G
BC1
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8.0
6.0
10
130
BZX84C13ET1, G
BC2
12.4
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8.0
7.0
11
120
BZX84C15ET1, G
BC3
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13
110
BZX84C16ET1, G
BC4
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14
105
BZX84C18ET1, G
BC5
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16
100
BZX84C20ET1, G
BC6
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18
85
BZX84C22ET1, G
BC7
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20
85
BZX84C24ET1, G
BC8
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22
80
Device*
VZ2 Below
@ IZT2 =
0.1 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1
=
2 mA
Min
Max
ZZT3
Below
@ IZT3
=
10 mA
BZX84C27ET1, G
BC9
25.1
27
28.9
80
25
28.9
300
25.2
29.3
BZX84C30ET1
BD1
28
30
32
80
27.8
32
300
28.1
BZX84C33ET1, G
BD2
31
33
35
80
BZX84C36ET1, G
BD3
34
36
38
90
30.8
35
325
33.8
38
350
BZX84C39ET1, G
BD4
37
39
41
130
36.7
41
BZX84C43ET1, G
BK6
40
43
46
150
39.7
BZX84C47ET1, G
BD5
44
47
50
170
BZX84C51ET1, G
BD6
48
51
54
BZX84C56ET1, G
BD7
52
56
BZX84C62ET1, G
BD8
58
BZX84C68ET1, G
BD9
64
BZX84C75ET1, G
BE1
70
Device
Min
Max
Max
Reverse
Leakage
Current
qVZ
(mV/k)
Below
@ IZT1 = 2
mA
V
IR
@ R
(V)
mA
Min
Max
C (pF)
@ VR
=0
f=
1 MHz
45
0.05
18.9
21.4
25.3
70
32.4
50
0.05
21
24.4
29.4
70
31.1
35.4
55
0.05
23.1
27.4
33.4
70
34.1
38.4
60
0.05
25.2
30.4
37.4
70
350
37.1
41.5
70
0.05
27.3
33.4
41.2
45
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
43.7
50
375
44.1
50.5
90
0.05
32.9
42
51.8
40
180
47.6
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
60
200
51.5
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
62
66
215
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
68
72
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
75
79
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
VZ1 Below
@ IZT1 = 2 mA
ZZT2
Below
@ IZT4
=
0.5 mA
V
IR
@ R
(V)
mA
VZ3 Below
@ IZT3 = 10 mA
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
* The “G” suffix indicates Pb−Free package available.
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3
BZX84C2V4ET1 Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
VZ @ IZT
10
2
1
0
−1
−2
−3
TYPICAL TC VALUES
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 255C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE ( Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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4
1.1
1.2
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
I R , LEAKAGE CURRENT ( μA)
TA = 25°C
1 V BIAS
100
BIAS AT
50% OF VZ NOM
1
10
1
+150°C
0.1
0.01
10
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
0.001
+ 25°C
0.0001
−55°C
0.00001
0
10
Figure 5. Typical Capacitance
1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
10
100
I Z, ZENER CURRENT (mA)
10
0.01
1
0.1
0.01
12
10
30
50
70
VZ, ZENER VOLTAGE (V)
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
PEAK VALUE IRSM @ 8 ms
tr
90
TA = 25°C
10
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
80
Figure 6. Typical Leakage Current
TA = 25°C
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
100
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
20
40
60
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
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5
80
90
BZX84C2V4ET1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BZX84C2V4ET1/D