CHENMKO ENTERPRISE CO.,LTD CHT857BVPT SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-563 * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP transistors in one package. (1) (5) 0.50 0.9~1.1 1.5~1.7 0.50 0.15~0.3 CONSTRUCTION (4) (3) 1.1~1.3 * Two PNP transistors in one package. MARKING * V4 0.5~0.6 0.09~0.18 CIRCUIT C1 B2 E2 6 5 4 1.5~1.7 TR2 TR1 1 2 3 E1 B1 C2 SOT-563 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS UNIT V CBO collector-base voltage open emitter -50 V V CEO collector-emitter voltage open base -45 V VEBO emitter-base voltage open collector -5 V IC collector current (DC) -0.1 A PC Collector power dissipation 150 mW Tstg Tj storage temperature junction temperature Note 1. Transistor mounted on an FR4 printed-circuit board. −55~+150 °C +150 °C 2004-07 RATING CHARACTERISTIC ( CHT857BVPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat PARAMETER CONDITIONS IE = 0; VCB = -30 V collector cut-off current IC = 0; VCB = -30 V; TA = 150 O C collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-10mA IE =-1uA emitter-base breakdown voltage VCE /I C =-5V/-2 mA current transfer ratio DC I C = -10 mA ; IB = -0.5 mA collector-emitter saturation IC = -100 mA ; I B = -5 mA voltage MIN. Typ. − − -50 -45 -5 -200 − − − − − − − − − − UNIT MAX. -15 nA -5 uA V − V − − V -450 -300 mV VBEsat base-emitter satur ation voltage IC = -10mA;IB = -0.5 mA − -700 − mV mV Cib emitter input capacitance − 8 − pF − 3 200 − pF − − MHz Cob collector output capacitance IC = 0; VCB =- 0.5V; f = 1 MH z IE = 0; VCB = -10V ; f = 1 MH z fT transition frequency IE = -20 mA; VCE = 5 V ; f = 100 MHz -650 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 ° 125 C 300 25 C ° 200 100 0 0.01 - 40 C ° 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN RATING CHARACTERISTIC CURVES ( CHT857BVPT) Collector-Emitter Saturation Voltage vs Collector Current 0. 3 β = 10 0.25 0. 2 0.15 ° 25 C 0. 1 0.05 ° 125 C ° - 40 C 0 0.1 1 10 10 0 I C - COLLECTOR CURRE NT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 ° - 40 C 0.8 ° 25 C 0.6 ° 125 C 0.4 0.2 0 0.1 1 10 10 0 300 I C - COLLECTOR CURRE NT (mA) V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CHT857BVPT) Base Emitter ON Voltage vs Collector Current 1 ° 0.8 - 40 C ° 125 C 0.4 V CE = 5V 0.2 0 0.1 1 1 0. 1 0.01 75 10 0 125 ° V CE - COLLECTOR-EMITTER VOLTAGE (V) T A - AMBIE NT TEMP ERATURE ( C) BVCER - BREAKDOWN VOLTAGE (V) V CB = 50V 10 50 90 85 80 75 70 0.1 100 uA 300 mA 50 mA 1 10 100 1000 RESISTANCE (k Ω) 100 Ta = 25 °C 3 1 Input and Output Capacitance vs Reverse Voltage 4 Ic = 200 95 Collector Saturation Region 2 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base f = 1.0 MHz CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 0 25 10 I C - COLLECTOR CURRE NT (mA) Collector-Cutoff Current vs Ambient Temperature 10 ° 25 C 0.6 10 Cib Cob 0 100 300 700 I B - BASE CURRENT (uA) 2000 4000 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100 f T - GAIN BANDWIDTH PRODUCT (MHz) RATING CHARACTERISTIC CURVES ( CHT857BVPT) Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 40 300 Vce = 5V 270 ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf tr 60 30 td 0 0 10 20 50 10 100 150 20 30 Power Dissipation vs Ambient Temperat ure 500 400 300 200 100 0 0 50 100 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) PD - POWE R DIS SIPATION (W) 1 25 50 75 100 ° TE MPE RATURE ( C) 125 150 200 300