CHAMP CMT9435G

CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
‹
VDS=-30V , ID=-5.3A
‹
Advanced trench process technology
‹
RDS(ON) , VGS@-10V , IDS@ -5.3A = 60mΩ
‹
High Density Cell Design For Ultra Low On-Resistance
‹
RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ
‹
Fully Characterized Avalanche Voltage and Current
‹
Improved Shoot –Through FOM
APPLICATIONS
‹
Power Management in Notebook
‹
Portable Equipment
‹
Battery Powered System
‹
DC/DC Converter
‹
Load Switch
‹
DSC
‹
LCD Display inverter
PIN CONFIGURATION
SYMBOL
8-PIN SOP (S08)
Top View
P-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT9435G
Package
SOP-8
*Note: G : Suffix for Pb Free Product
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 1
CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
ID
-5.3
A
IDM
-20
A
Continuous Drain Current
Pulsed Drain Current
TA=25℃
Maximum Power Dissipation
2.5
PD
W
TA=75℃
Operating Junction Temperature Range
TJ
-55 to150
℃
Storage Temperature Range
TSTG
-55 to 150
℃
Junction-to-Ambient Thermal Resistance (PCB mount)
RqJA
50
℃/W
Junction-to-Case Thermal Resistance
RqJC
30
℃/W
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 2
CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃. C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Drain-Source On-State Resistance
VGS=-10V, ID=-5.3A
-
50
60
mΩ
RDS(ON)
Drain-Source On-State Resistance
VGS=-4.5V, ID=-4.2A
-
75
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1.0
-1.5
-3.0
V
gfs
Forward Transconductance
VDS=10V, ID=6A
4
7
-
S
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Body Leakage
VGS=±20V , VDS=0V
-
-
±100
nA
Qg
Total Gate Charge
ID=-5.3A
-
9.52
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
3.43
-
nC
Qgd
Gate-Drain Charge
VGS=-10V
-
1.71
-
nC
td(on)
Turn-On Delay Time
VDD=-15V
-
10.8
-
ns
tr
Turn-On Rise Time
ID=-1A
-
2.33
-
ns
td(off)
Turn-Off Delay Time
RG=6Ω,VGEN=-10V
-
23.53
-
ns
tf
Turn-Off Fall Time
RL=15Ω
-
3.87
-
ns
Ciss
Input Capacitance
VGS=0V
-
551.57
-
pF
Coss
Output Capacitance
VDS=-15V
-
90.96
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60.79
-
pF
-
-
-1.9
A
-
-
-1.3
V
Dynamic
Source-Drain Diode
Is
Max. Diode Forward Current
VSD
Diode Forward Voltage
IS=-5.3A, VGS=0V,
Notes:
1.Pulse test : Pulse width <300us , duty cycle <2%.
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 3
CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL
CHARACTERISTICS
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 4
CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 5
CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE DIMENSION
8-PIN SOP (S08)
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 6
CMT9435G
P-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
2007/02/05 Rev1.0
Champion Microelectronic Corporation
Page 7