CY7C1623KV18 144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture 144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture Features Configuration ■ 144-Mbit density (8 M × 18) CY7C1623KV18 – 8 M × 18 ■ 333 MHz clock for high bandwidth Functional Description ■ Two-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Synchronous internally self timed writes ■ DDR-II operates with 1.5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to DDR-I device with 1 cycle read latency when DOFF is asserted LOW ■ 1.8 V core power supply with HSTL inputs and outputs ■ Variable drive HSTL output buffers ■ Expanded HSTL output voltage (1.4 V–VDD) ❐ Supports both 1.5 V and 1.8 V I/O supply ■ Available in 165-ball FBGA package (15 × 17 × 1.4 mm) ■ Offered in Pb-free package ■ JTAG 1149.1 compatible test access port ■ Phase Locked Loop (PLL) for accurate data placement The CY7C1623KV18 is 1.8 V Synchronous Pipelined SRAM, equipped with DDR-II SIO (Double Data Rate Separate I/O) architecture. The DDR-II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. The DDR-II SIO has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 18-bit words that burst sequentially into or out of the device. Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks CQ/CQ, eliminating the need to capture data separately from each individual DDR-II SIO SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Selection Guide Description Maximum Operating Frequency Maximum Operating Current Cypress Semiconductor Corporation Document Number: 001-44276 Rev. *G × 18 • 198 Champion Court • 333 MHz 250 MHz Unit 333 250 MHz 650 560 mA San Jose, CA 95134-1709 • 408-943-2600 Revised March 28, 2013 CY7C1623KV18 Logic Block Diagram – CY7C1623KV18 K K CLK Gen. DOFF LD LD Control Logic R/W C Read Data Reg. C CQ 36 R/W VREF Read Add. Decode Address Register Write Data Reg 4M x 18 Array 22 Write Data Reg 4M x 18 Array A(21:0) 18 Write Add. Decode D[17:0] 18 Control Logic BWS[1:0] Document Number: 001-44276 Rev. *G 18 Reg. Reg. 18 Reg. 18 CQ 18 Q[17:0] Page 2 of 28 CY7C1623KV18 Contents Pin Configurations ........................................................... 4 Pin Definitions .................................................................. 5 Functional Overview ........................................................ 6 Read Operations ......................................................... 6 Write Operations ......................................................... 6 Byte Write Operations ................................................. 6 Single Clock Mode ...................................................... 6 DDR Operation ............................................................ 7 Depth Expansion ......................................................... 7 Programmable Impedance .......................................... 7 Echo Clocks ................................................................ 7 PLL .............................................................................. 7 Application Example ........................................................ 7 Truth Table ........................................................................ 8 Write Cycle Descriptions ................................................. 8 IEEE 1149.1 Serial Boundary Scan (JTAG) .................... 9 Disabling the JTAG Feature ........................................ 9 Test Access Port ......................................................... 9 Performing a TAP Reset ............................................. 9 TAP Registers ............................................................. 9 TAP Instruction Set ..................................................... 9 TAP Controller State Diagram ....................................... 11 TAP Controller Block Diagram ...................................... 12 TAP Electrical Characteristics ...................................... 12 TAP AC Switching Characteristics ............................... 13 TAP Timing and Test Conditions .................................. 14 Identification Register Definitions ................................ 15 Document Number: 001-44276 Rev. *G Scan Register Sizes ....................................................... 15 Instruction Codes ........................................................... 15 Boundary Scan Order .................................................... 16 Power Up Sequence in DDR-II SRAM ........................... 17 Power Up Sequence ................................................. 17 PLL Constraints ......................................................... 17 Maximum Ratings ........................................................... 18 Operating Range ............................................................. 18 Electrical Characteristics ............................................... 18 DC Electrical Characteristics ..................................... 18 AC Electrical Characteristics ..................................... 19 Capacitance .................................................................... 19 Thermal Resistance ........................................................ 19 AC Test Loads and Waveforms ..................................... 19 Switching Characteristics .............................................. 20 Switching Waveforms .................................................... 22 Ordering Information ...................................................... 23 Ordering Code Definitions ......................................... 23 Package Diagram ............................................................ 24 Acronyms ........................................................................ 25 Document Conventions ................................................. 25 Units of Measure ....................................................... 25 Document History Page ................................................. 26 Sales, Solutions, and Legal Information ...................... 28 Worldwide Sales and Design Support ....................... 28 Products .................................................................... 28 PSoC Solutions ......................................................... 28 Page 3 of 28 CY7C1623KV18 Pin Configurations The pin configuration for CY7C1623KV18 follows:  Figure 1. 165-ball FBGA (15 × 17 × 1.4 mm) pinout CY7C1623KV18 (8 M × 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ A A R/W BWS1 K NC/288M LD A A CQ B NC Q9 D9 A NC K BWS0 A NC NC Q8 C NC NC D10 VSS A A A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI Note 1. NC/288M is not connected to the die and can be tied to any voltage level. Document Number: 001-44276 Rev. *G Page 4 of 28 CY7C1623KV18 Pin Definitions Pin Name I/O Pin Description D[17:0] InputData Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. Synchronous LD InputSynchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition Synchronous includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus activity). BWS0, BWS1 InputByte Write Select 0 and 1 Active LOW. Sampled on the rising edge of the K and K clocks during Synchronous write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. BWS0 controls D[8:0], BWS1 controls D[17:9]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and it is not written into the device. A InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations. Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is organized as 8 M × 18 (2 arrays each of 4 M × 18). Therefore, only 22 address inputs are needed to access the entire memory array. These inputs are ignored when the appropriate port is deselected. Q[17:0] OutputsData Output Signals. These pins drive out the requested data during a read operation. Valid data is Synchronous driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single clock mode. When the read port is deselected, Q[17:0] are automatically tri-stated. R/W InputSynchronous Read/Write Input. When LD is LOW, this input designates the access type (read when Synchronous R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times around the edge of K. C Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 7 for further details. C Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 7 for further details. K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[17:0] when in single clock mode. All accesses are initiated on the rising edge of K. K Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[17:0] when in single clock mode. CQ Echo Clock CQ Referenced with Respect to C. This is a free-running clock and is synchronized to the input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 20. CQ Echo Clock CQ Referenced with Respect to C. This is a free-running clock and is synchronized to the input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 20. ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[17:0] output impedance are set to 0.2 × RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. DOFF Input PLL Turn Off Active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10-Kohm or less pull up resistor. The device behaves in DDR-I mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with DDR-I timing. Document Number: 001-44276 Rev. *G Page 5 of 28 CY7C1623KV18 Pin Definitions (continued) Pin Name I/O Pin Description TDO Output TDO Pin for JTAG. TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M N/A Not Connected to the Die. Can be tied to any voltage level. VREF VDD VSS VDDQ InputReference Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC measurement points. Power Supply Power Supply Inputs to the Core of the Device. Ground Ground for the Device. Power Supply Power Supply Inputs for the Outputs of the Device. Functional Overview The CY7C1623KV18 is synchronous pipelined Burst SRAM equipped with a DDR-II Separate I/O interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS the device behaves in DDR-I mode with a read latency of one clock cycle. Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C, or K/K when in single clock mode). All synchronous data inputs (D[17:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[17:0]) pass through output registers controlled by the rising edge of the output clocks (C/C, or K/K when in single-clock mode). All synchronous control (R/W, LD, BWS[0:1]) inputs pass through input registers controlled by the rising edge of the input clock (K). Read Operations The CY7C1623KV18 is organized internally as two arrays of 4 M × 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the read address register. Following the next K clock rise the corresponding lowest order 18-bit word data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K and K when in single clock mode). Read accesses can be initiated on every rising edge of the positive input clock (K). The data flow is pipelined such that data is transferred out of the device on every rising edge of the output clocks, C/C (or K/K when in single clock mode). Document Number: 001-44276 Rev. *G The CY7C1623KV18 first completes the pending read transactions, when read access is deselected. Synchronous internal circuitry automatically tri-states the output following the next rising edge of the positive output clock (C). Write Operations Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the write address register. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. Write accesses can be initiated on every rising edge of the positive input clock (K). The data flow is pipelined such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When Write access is deselected, the device ignores all inputs after the pending write operations are completed. Byte Write Operations Byte write operations are supported by the CY7C1623KV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify, read, modify, and write operations to a byte write operation. Single Clock Mode The CY7C1623KV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that Page 6 of 28 CY7C1623KV18 control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, tie C and C HIGH at power on. This function is a strap option and not alterable during device operation. DDR Operation The CY7C1623KV18 enables high-performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. If a read occurs after a write cycle, address and data for the write are stored in registers. The write information must be stored because the SRAM cannot perform the last word write to the array without conflicting with the read. The data stays in this register until the next write cycle occurs. On the first write cycle after the read(s), the stored data from the earlier write is written into the SRAM array. This is called a posted write. Depth Expansion Depth expansion requires replicating the LD control signal for each bank. All other control signals can be common between banks as appropriate. Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust its output driver impedance. The value of RQ must be 5 times the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15 percent is between 175 and 350 , with VDDQ = 1.5 V. The output impedance is adjusted every 1024 cycles at power up to account for drifts in supply voltage and temperature. Echo Clocks Echo clocks are provided on the DDR-II to simplify data capture on high-speed systems. Two echo clocks are generated by the DDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free-running clocks and are synchronized to the output clock of the DDR-II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 20. PLL These chips use a Phase Locked Loop (PLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the PLL is locked after 20 s of stable clock. The PLL is also reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the PLL to lock it to the desired frequency. The PLL automatically locks 20 s after a stable clock is presented. The PLL may be disabled by applying ground to the DOFF pin. When the PLL is turned off, the device behaves in DDR-I mode (with one cycle latency and a longer access time). Application Example Figure 2 shows four DDR-II SIO used in an application. Figure 2. Application Example SRAM 1 Vt D R BUS MASTER (CPU or ASIC) A B WB S LD R/W W LDR/W ## ## ## DATA IN DATA OUT Address LD# R/W# BWS# ZQ Q CQ CQ# C C# K K# SRAM 4 R = 250Ohms B W LD R/W S # # # D A R ZQ Q CQ CQ# C C# K K# R = 250Ohms Vt Vt SRAM 1 Input CQ SRAM 1 Input CQ# SRAM 4 Input CQ SRAM 4 Input CQ# Source K Source K# Delayed K Delayed K# R R = 50Ohms Document Number: 001-44276 Rev. *G Vt = VREF Page 7 of 28 CY7C1623KV18 Truth Table The truth table for CY7C1623KV18 is as follows: [2, 3, 4, 5, 6, 7] Operation K LD R/W Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. L–H L L D(A + 0) at K(t + 1) D(A + 1) at K(t + 1) Read Cycle: Load address; wait one and a half cycle; read data on consecutive C and C rising edges. L–H L H Q(A + 0) at C(t + 1) Q(A + 1) at C(t + 2) L–H H X High Z High Z Stopped X X Previous State Previous State NOP: No Operation Standby: Clock Stopped DQ DQ Write Cycle Descriptions The write cycle description table for CY7C1623KV18 is as follows: [2, 8] BWS0 BWS1 K K L L L–H – L L – L H L–H L H – H L L–H H L – H H L–H H H – Comments During the data portion of a write sequenceboth bytes (D[17:0]) are written into the device. L–H During the data portion of a write sequenceboth bytes (D[17:0]) are written into the device. – During the data portion of a write sequenceonly the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequenceonly the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequenceonly the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Notes 2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge. 3. Device powers up deselected with the outputs in a tri-state condition. 4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst. 5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle. 6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode. 7. Ensure that when clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0 and BWS1 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document Number: 001-44276 Rev. *G Page 8 of 28 CY7C1623KV18 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard 1149.1-2001. The TAP operates using JEDEC standard 1.8 V I/O logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information about loading the instruction register, see the TAP Controller State Diagram on page 11. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Instruction Codes on page 15). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a high Z state. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document Number: 001-44276 Rev. *G Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in TAP Controller Block Diagram on page 12. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary ‘01’ pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. The Boundary Scan Order on page 16 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Identification Register Definitions on page 15. TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Instruction Codes on page 15. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. Page 9 of 28 CY7C1623KV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High Z state until the next command is supplied during the Update IR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. The TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. EXTEST OUTPUT BUS TRI-STATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The boundary scan register has a special bit located at bit 108. When this scan cell, called the ‘extest output bus tri-state’, is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set LOW to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. Document Number: 001-44276 Rev. *G Page 10 of 28 CY7C1623KV18 TAP Controller State Diagram The state diagram for the TAP controller follows:  1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 PAUSE-DR 0 0 0 1 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-44276 Rev. *G Page 11 of 28 CY7C1623KV18 TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 108 . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range Parameter [10, 11, 12] Description Min Max Unit IOH =2.0 mA 1.4 – V Output HIGH Voltage IOH =100 A 1.6 – V Output LOW Voltage IOL = 2.0 mA – 0.4 V VOL2 Output LOW Voltage IOL = 100 A – 0.2 V VIH Input HIGH Voltage VIL Input LOW Voltage IX Input and Output Load Current VOH1 Output HIGH Voltage VOH2 VOL1 Test Conditions 0.65 × VDD VDD + 0.3 GND VI VDD V –0.3 0.35 × VDD V –5 5 A Notes 10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 18. 11. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 12. All Voltage referenced to Ground. Document Number: 001-44276 Rev. *G Page 12 of 28 CY7C1623KV18 TAP AC Switching Characteristics Over the Operating Range Parameter [13, 14] Description Min Max Unit 50 – ns TCK Clock Frequency – 20 MHz TCK Clock HIGH 20 – ns TCK Clock LOW 20 – ns tTMSS TMS Setup to TCK Clock Rise 5 – ns tTDIS TDI Setup to TCK Clock Rise 5 – ns tCS Capture Setup to TCK Rise 5 – ns tTMSH TMS Hold after TCK Clock Rise 5 – ns tTDIH TDI Hold after Clock Rise 5 – ns tCH Capture Hold after Clock Rise 5 – ns tTDOV TCK Clock LOW to TDO Valid – 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 – ns tTCYC TCK Clock Cycle Time tTF tTH tTL Setup Times Hold Times Output Times Notes 13. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 14. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-44276 Rev. *G Page 13 of 28 CY7C1623KV18 TAP Timing and Test Conditions Figure 3 shows the TAP timing and test conditions.  Figure 3. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50 0.9V TDO 0V Z0 = 50 (a) CL = 20 pF tTH GND tTL Test Clock TCK tTMSH tTMSS tTCYC Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Note 15. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-44276 Rev. *G Page 14 of 28 CY7C1623KV18 Identification Register Definitions Value Instruction Field Description CY7C1623KV18 Revision Number (31:29) 000 Cypress Device ID (28:12) 11010100010010011 Cypress JEDEC ID (11:1) 00000110100 ID Register Presence (0) 1 Version number. Defines the type of SRAM. Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 109 Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the input and output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 001-44276 Rev. *G Page 15 of 28 CY7C1623KV18 Boundary Scan Order Bit No. Bump ID Bit No. Bump ID Bit No. Bump ID Bit No. Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C 71 1D 99 2N 16 9N 44 9B 72 2C 100 2P 17 11L 45 10B 73 3E 101 1P 18 11M 46 11A 74 2D 102 3R 19 9L 47 10A 75 2E 103 4R 20 10L 48 9A 76 1E 104 4P 21 11K 49 8B 77 2F 105 5P 22 10K 50 7C 78 3F 106 5N 23 9J 51 6C 79 1G 107 5R 24 9K 52 8A 80 1F 108 Internal 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1H Document Number: 001-44276 Rev. *G Page 16 of 28 CY7C1623KV18 Power Up Sequence in DDR-II SRAM PLL Constraints DDR-II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. ■ PLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. ■ The PLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 20 s of stable clock to relock to the desired clock frequency. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW). ❐ Apply VDD before VDDQ. ❐ Apply VDDQ before VREF or at the same time as VREF. ❐ Drive DOFF HIGH. ■ Provide stable DOFF (HIGH), power and clock (K, K) for 20 s to lock the PLL. ~ ~ Figure 4. Power Up Waveforms K K ~ ~ Unstable Clock > 20μs Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF Document Number: 001-44276 Rev. *G V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix HIGH (or tie to VDDQ) Page 17 of 28 CY7C1623KV18 Maximum Ratings Current into Outputs (LOW) ........................................ 20 mA Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ............................... –65 °C to +150 °C Ambient Temperature with Power Applied .................................. –55 °C to +125 °C Static Discharge Voltage (MIL-STD-883, M. 3015) ........................................ > 2001 V Latch-up Current ................................................... > 200 mA Operating Range Supply Voltage on VDD Relative to GND .....–0.5 V to +2.9 V Range Supply Voltage on VDDQ Relative to GND .... –0.5 V to +VDD Ambient Temperature (TA) VDD  VDDQ  Commercial 0 °C to +70 °C 1.8 ± 0.1 V 1.4 V to VDD DC Applied to Outputs in High Z ...... –0.5 V to VDDQ + 0.3 V DC Input Voltage  ........................... –0.5 V to VDD + 0.3 V Electrical Characteristics Over the Operating Range DC Electrical Characteristics Over the Operating Range Parameter  Description Test Conditions Min Typ Max Unit VDD Power Supply Voltage 1.7 1.8 1.9 V VDDQ I/O Supply Voltage 1.4 1.5 VDD V VOH Output HIGH Voltage Note 19 VDDQ/2 – 0.12 – VDDQ/2 + 0.12 V VOL Output LOW Voltage Note 20 VDDQ/2 – 0.12 – VDDQ/2 + 0.12 V VOH(LOW) Output HIGH Voltage IOH =0.1 mA, Nominal Impedance VDDQ – 0.2 – VDDQ V VOL(LOW) Output LOW Voltage IOL = 0.1 mA, Nominal Impedance VSS – 0.2 V VIH Input HIGH Voltage VREF + 0.1 – VDDQ + 0.3 V VIL Input LOW Voltage –0.3 – VREF – 0.1 V IX Input Leakage Current GND VI VDDQ 5 – 5 A IOZ Output Leakage Current GND VI VDDQ, Output Disabled 5 – 5 A VREF Input Reference Voltage IDD  VDD Operating Supply ISB1 Automatic Power Down Current  Typical Value = 0.75 V 0.68 0.75 0.95 V VDD = Max, IOUT = 0 mA, 333 MHz (× 18) f = fMAX = 1/tCYC 250 MHz (× 18) – – 650 mA – – 560 mA Max VDD, 333 MHz (× 18) Both Ports Deselected, VIN VIH or VIN VIL, 250 MHz (× 18) f = fMAX = 1/tCYC, Inputs Static – – 410 mA – – 370 mA Notes 16. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 17. Power up: assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 18. All Voltage referenced to Ground. 19. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175 < RQ < 350 . 20. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 < RQ < 350 . 21. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller. 22. The operation current is calculated with 50% read cycle and 50% write cycle. Document Number: 001-44276 Rev. *G Page 18 of 28 CY7C1623KV18 AC Electrical Characteristics Over the Operating Range Parameter  Min Typ Max Unit VIH Input HIGH voltage Description Test Conditions VREF + 0.2 – – V VIL Input LOW voltage – – VREF – 0.2 V Max Unit 2 pF 3 pF Capacitance Parameter  Description CIN Input capacitance CO Output capacitance Test Conditions TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V Thermal Resistance Parameter  Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) 165-ball FBGA Unit Package Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. 12.55 °C/W 2.49 °C/W AC Test Loads and Waveforms Figure 5. AC Test Loads and Waveforms VREF = 0.75 V VREF 0.75 V VREF OUTPUT Z0 = 50 Device Under Test ZQ RL = 50 R = 50 ALL INPUT PULSES 1.25 V 0.75 V OUTPUT Device Under VREF = 0.75 V Test ZQ RQ = 250 (a) 0.75 V INCLUDING JIG AND SCOPE 5 pF  0.25 V Slew Rate = 2 V/ns RQ = 250 (b) Notes 23. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 24. Tested initially and after any design or process change that may affect these parameters. 25. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5. Document Number: 001-44276 Rev. *G Page 19 of 28 CY7C1623KV18 Switching Characteristics Over the Operating Range Parameters [26, 27] 333 MHz Description Cypress Consortium Parameter Parameter VDD(typical) to the first access  tPOWER 250 MHz Unit Min Max Min Max 1 – 1 – ms tCYC tKHKH K clock and C clock cycle time 3.0 8.4 4.0 8.4 ns tKH tKHKL Input clock (K/K; C/C) HIGH 1.20 – 1.6 – ns tKL tKLKH Input clock (K/K; C/C) LOW 1.20 – 1.6 – ns tKHKH tKHKH K clock rise to K clock rise and C to C rise (rising edge to rising edge) 1.35 – 1.8 – ns tKHCH tKHCH K/K clock rise to C/C clock rise (rising edge to rising edge) 0 1.30 0 1.8 ns Setup Times tSA tAVKH Address setup to K clock rise 0.4 – 0.5 – ns tSC tIVKH Control setup to K clock rise (LD, R/W) 0.4 – 0.5 – ns tSCDDR tIVKH Double data rate control setup to clock (K/K) rise (BWS0, BWS1) 0.3 – 0.35 – ns tSD tDVKH D[X:0] setup to clock (K/K) rise 0.3 – 0.35 – ns tHA tKHAX Address hold after K clock rise 0.4 – 0.5 – ns tHC tKHIX Control hold after K clock rise (LD, R/W) 0.4 – 0.5 – ns tHCDDR tKHIX Double data rate control hold after clock (K/K) rise (BWS0, BWS1) 0.3 – 0.35 – ns tHD tKHDX D[X:0] hold after clock (K/K) rise 0.3 – 0.35 – ns Hold Times Notes 26. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5 on page 19. 27. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 28. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD(minimum) initially before a read or write operation can be initiated. Document Number: 001-44276 Rev. *G Page 20 of 28 CY7C1623KV18 Switching Characteristics (continued) Over the Operating Range Parameters [26, 27] 333 MHz Description Cypress Consortium Parameter Parameter 250 MHz Unit Min Max Min Max – 0.45 – 0.45 ns –0.45 – –0.45 – ns – 0.45 – 0.45 ns –0.45 – –0.45 – ns – 0.25 – 0.30 ns –0.25 – –0.30 – ns 1.25 – 1.75 – ns 1.25 – 1.75 – ns – 0.45 – 0.45 ns –0.45 – –0.45 – ns Output Times tCO tCHQV C/C clock rise (or K/K in single clock mode) to data valid tDOH tCHQX Data output hold after output C/C clock rise (active to active) tCCQO tCHCQV C/C clock rise to echo clock valid tCQOH tCHCQX Echo clock hold after C/C clock rise tCQD tCQHQV Echo clock high to data valid tCQDOH tCQHQX Echo clock high to data invalid  tCQH tCQHCQL Output clock (CQ/CQ) HIGH tCQHCQH tCQHCQH CQ clock rise to CQ clock rise (rising edge to rising edge)  tCHZ tCHQZ Clock (C/C) rise to high Z (active to high Z) [30, tCLZ tCHQX1 Clock (C/C) rise to low Z [30, 31] tKC Var tKC Var Clock phase jitter – 0.20 – 0.20 ns tKC lock tKC lock PLL lock time (K, C) 20 – 20 – s tKC Reset tKC Reset K static to PLL reset 30 – 30 – ns 31] PLL Timing Notes 29. These parameters are extrapolated from the input timing parameters (tCYC/2 – 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by design and are not tested in production. 30. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of Figure 5 on page 19. Transition is measured ±100 mV from steady-state voltage. 31. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. Document Number: 001-44276 Rev. *G Page 21 of 28 CY7C1623KV18 Switching Waveforms Figure 6. Read/Write/Deselect Sequence [32, 33, 34] NOP READ (burst of 2) 2 1 READ (burst of 2) 3 WRITE (burst of 2) 5 WRITE (burst of 2) 4 READ (burst of 2) 6 NOP 7 8 K tKH tCYC tKL tKHKH K LD t SC tHC R/W A A0 tSA A1 A2 A3 A4 tHD tHD tHA tSD tSD D D20 Q00 Q t KHCH t Q01 tCQD t CLZ Q10 D21 D31 Q11 Q40 Q41 tDOH KHCH tCO D30 t CHZ tCQDOH C tKH tCYC tKL tKHKH C# tCQOH tCCQO CQ tCQOH tCCQO tCQH tCQHCQH CQ# DON’T CARE UNDEFINED Notes 32. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1. 33. Outputs are disabled (High Z) one clock cycle after a NOP. 34. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document Number: 001-44276 Rev. *G Page 22 of 28 CY7C1623KV18 Ordering Information Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) Ordering Code Package Diagram Package Type Operating Range 333 CY7C1623KV18-333BZXC 51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free Commercial 250 CY7C1623KV18-250BZXC 51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free Commercial Ordering Code Definitions CY 7 C 1623 K V18 - XXX BZ X C Temperature Grade: C = Commercial Pb-free Package Type: BZ = 165-ball FBGA Frequency Range: XXX = 333 MHz or 250 MHz V18 = 1.8 V Die Revision Part Identifier Technology Code: C = CMOS Marketing Code: 7 = SRAM Company ID: CY = Cypress Document Number: 001-44276 Rev. *G Page 23 of 28 CY7C1623KV18 Package Diagram Figure 7. 165-ball FBGA (15 × 17 × 1.40 mm) (0.50 Ball Diameter) Package Outline, 51-85195 51-85195 *C Document Number: 001-44276 Rev. *G Page 24 of 28 CY7C1623KV18 Acronyms Acronym Document Conventions Description Units of Measure BWS Byte Write Select DDR Double Data Rate °C degree Celsius DLL Delay Lock Loop FIT/Dev failure in time per device FBGA Fine-Pitch Ball Grid Array FIT/Mb failure in time per mega bit HSTL High-Speed Transceiver Logic MHz megahertz I/O input/output µA microampere JTAG Joint Test Action Group µs microsecond LSB Least Significant Bit mA milliampere LSBU Logical Single-Bit Upsets mm millimeter LMBU Logical Multi-Bit Upsets ms millisecond MSB Most Significant Bit ns nanosecond PLL Phase Locked Loop ohm QDR Quad Data Rate % percent SEL Single Event Latch Up pF picofarad SRAM Static Random Access Memory V volt TAP Test Access Port W watt TCK Test Clock TDI Test Data-In TDO Test Data-Out TMS Test Mode Select Document Number: 001-44276 Rev. *G Symbol Unit of Measure Page 25 of 28 CY7C1623KV18 Document History Page Document Title: CY7C1623KV18, 144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture Document Number: 001-44276 Rev. ECN No. Submission Date Orig. of Change ** 1961327 See ECN VKN / PYRS New data sheet. *A 2555945 08/22/08 VKN / PYRS Updated Identification Register Definitions (Changed Revision Number (31:29) from 001 to 000). Updated Power Up Sequence in DDR-II SRAM (Updated description and Figure 4). Updated Maximum Ratings (Changed Ambient Temperature with Power Applied from “–10 °C to +85 °C” to “–55 °C to +125 °C”). Updated Electrical Characteristics (Changed the maximum values of IDD and ISB1 parameters). Updated Thermal Resistance (Included values for 165-ball FBGA package). *B 3228953 04/15/2011 NJY Description of Change Changed status from Preliminary to Final. Updated Ordering Information (updated part numbers) and added Ordering Code Definitions. Updated Package Diagram. Added Acronyms and Units of Measure. Updated in new template. *C 3243572 04/28/2011 NJY Minor text edits across the document. *D 3275033 06/06/2011 NJY No technical updates. *E 3428174 11/04/2011 NJY Updated Package Diagram. Document Number: 001-44276 Rev. *G Page 26 of 28 CY7C1623KV18 Document History Page (continued) Document Title: CY7C1623KV18, 144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture Document Number: 001-44276 Rev. ECN No. Submission Date *F 3577172 04/10/2012 *G 3947120 03/28/2013 Document Number: 001-44276 Rev. *G Orig. of Change Description of Change AVIA / PRIT Updated Features (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information, removed non Pb-free packages). Updated Configuration (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Functional Description (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Selection Guide (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information, removed 300 MHz, 200 MHz and 167 MHz frequencies related information). Removed Logic Block Diagram – CY7C1622KV18. Removed Logic Block Diagram – CY7C1629KV18. Removed Logic Block Diagram – CY7C1624KV18. Updated Pin Configurations (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Pin Definitions (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Functional Overview (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Truth Table (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Write Cycle Descriptions (Removed CY7C1622KV18 related information). Removed Write Cycle Descriptions (Corresponding to CY7C1629KV18 and CY7C1624KV18). Updated IEEE 1149.1 Serial Boundary Scan (JTAG) (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Identification Register Definitions (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information). Updated Operating Range (Removed Indsutrial Temperature Range). Updated Electrical Characteristics (Updated DC Electrical Characteristics (Removed CY7C1622KV18, CY7C1629KV18, and CY7C1624KV18 related information, removed 300 MHz, 200 MHz and 167 MHz frequencies related information)). Updated Switching Characteristics (Removed 300 MHz, 200 MHz and 167 MHz frequencies related information). Replaced all instances of IO with I/O across the document. PRIT No technical updates. Completing sunset review. Page 27 of 28 CY7C1623KV18 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2008-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-44276 Rev. *G Revised March 28, 2013 Page 28 of 28 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All products and company names mentioned in this document may be the trademarks of their respective holders.