DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. • 2.7- thru 12 V single supply or ± 2.7- thru ± 6-dual supply • Low on-resistance - RDS(on): 2.0 Ω at 12 V • Fast switching - tON: 28 ns • - tOFF: 22 ns • TTL and low voltage logic • Low leakage: 10 pA (typ.) • > 2000 V ESD protection Designed for optimal performance at single 5 V and dual ± 5 V, the DG9421, DG9422 combine low and flat on-resistance (3 Ω), fast speed (tON = 38 ns) and is well suited for applications where signal switching accuracy, low noise and low distortion is critical. The DG9421 and DG9422 respond to opposite control logic as shown in the Truth Table. Pb-free Available RoHS* COMPLIANT BENEFITS • • • • • • High accuracy High speed, low glitch Single and dual supply capability Low RON in small TSOP package Low leakage Low power consumption APPLICATIONS • • • • • • Automatic test equipment Data acquisition XDSL and DSLAM PBX systems Reed relay replacement Audio and video signal routing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TSOP-6 V+ 1 6 IN COM 2 5 NC V- 3 4 GND TRUTH TABLE Top View Device Marking: Logic DG9421 DG9422 0 ON OFF 1 OFF ON Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V Switches Shown for Logic "0" Input DG9421DV = 4Exxx TSOP-6 V+ COM V- 6 IN 2 5 NO 3 4 GND 1 Top View Device Marking: ORDERING INFORMATION Temp. Range Package - 40 °C to 85 °C 6/Pin TSOP Part Number DG9421DV-T1 DG9421DV-T1-E3 DG9422DV-T1 DG9422DV-T1-E3 DG9422DV = 4Fxxx * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70679 S-82265-Rev. F, 29-Sep-08 www.vishay.com 1 DG9421, DG9422 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter V+ to V- Limit - 0.3 to 13 GND to V- 7 - 0.3 to (V+ + 0.3) or 50 mA, whichever occurs first 50 VINa, VS, VD Continuous Current (Any Terminal) Peak Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle) V V/mA mA 100 Storage Temperature Power Dissipation (Packages)b Unit 6-Pin TSOP c - 65 to 150 °C 570 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 7 mW/°C above 25 °C. SPECIFICATIONSa Single Supply 12 V Parameter Limits - 40 °C to 85°C Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf Temp.b Min.d VANALOG Full 0 RDS(on) V+ = 10.8 V, V- = 0 V, IS = 5 mA, VD = 2/9 V Room Full Symbol Typ.c Max.d Unit 12 V 3 3.4 Ω Analog Switch Analog Signal Rangea Drain-Source On-Resistance Switch Off Leakage Current IS(off) VD = 1/11 V, VS = 11/1 V ID(off) 2.0 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 1 10 ID(on) VS = VD = 11/1 V Room Full -1 - 10 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full -1 0.02 1 Input Current, VIN High IIH VIN Under Test = 2.4 V Full -1 0.02 1 Turn-On Timee tON Room Full 20 45 49 Turn-Off Timee tOFF RL = 300 Ω, CL = 35 pF, VS = 5 V See Figure 2 Room Full 25 47 59 Channel-On Leakage Current nA Digital Control µA Dynamic Characteristics Charge Injectione Off-Isolatione Source Off Capacitancee ns Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 43 pC OIRR RL = 50 Ω, CL = 5 pF , f = 1 MHz Room - 60 dB Room 31 Room 30 CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Room 71 Positive Supply Current I+ Room Full 0.02 Negative Supply Current I- f = 1 MHz pF Power Supplies Ground Current www.vishay.com 2 IGND VIN = 0 or 12 V Room Full -1 -5 - 0.002 Room Full -1 -5 - 0.002 1 5 µA Document Number: 70679 S-82265-Rev. F, 29-Sep-08 DG9421, DG9422 Vishay Siliconix SPECIFICATIONSa Dual Supply ± 5 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V, VIN = 2.4 V, 0.8 Vf Limits - 40 °C to 85 °C Temp.b Min.d Full -5 Typ.c Max.d Unit 5 V 3.2 3.6 Ω Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg VANALOG RDS(on) IS(off) ID(off) V+ = 5 V, V- = - 5 V IS = 5 mA, VD = ± 3.5 V V+ = 5.5 V, V- = - 5.5 V VD = ± 4.5 V, VS = -/+ 4.5 V Room Full 2.2 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 1 10 ID(on) V+ = 5.5 V, V- = - 5.5 V VS = VD = ± 4.5 V Room Full -1 - 10 Input Current, VIN Lowe IIL VIN Under Test = 0.8 V Full -1 0.02 1 Input Current, VIN Highe IIH VIN Under Test = 2.4 V Full -1 0.02 1 Turn-On Time tON Room Full 38 63 68 Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF, VS = ± 3.5 V See Figure 2 Room Full 45 83 97 Channel-On Leakage Currentg nA Digital Control µA Dynamic Characteristics Charge Injectione Off-Isolatione Source Off Capacitancee ns Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 207 pC OIRR RL = 50 Ω, CL = 5 pF , f = 1 MHz Room - 57 dB Room 32 Room 31 CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Room 71 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- f = 1 MHz pF Power Supplies Ground Currente Document Number: 70679 S-82265-Rev. F, 29-Sep-08 IGND VIN = 0 or 5 V Room Full -1 -5 - 0.002 Room Full -1 -5 - 0.002 1 5 µA www.vishay.com 3 DG9421, DG9422 Vishay Siliconix SPECIFICATIONSa Single Supply 5 V Parameter Symbol Limits - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf Temp.b Min.d Full 0 V+ = 4.5 V, IS = 5 mA, VD = 1 V, 3.5 V Typ.c Max.d Unit 5 V Room Full 3.6 6.0 6.6 Ω Room Hot 43 67 74 Room Hot 30 67 80 Room 25 Room Hot 0.02 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Charge Injectione Q RL = 300 Ω, CL = 35 pF, VS = 3.5 V, See Figure 2 Vg = 0 V, Rg = 0 Ω, CL = 1 nF ns pC Power Supplies Positive Supply Currente I+ Negative Supply Currente I- Ground Currente www.vishay.com 4 IGND VIN = 0 or 5 V Room Hot -1 -5 - 0.002 Room Hot -1 -5 - 0.002 1 5 µA Document Number: 70679 S-82265-Rev. F, 29-Sep-08 DG9421, DG9422 Vishay Siliconix SPECIFICATIONSa Single Supply 3 V Parameter Symbol Limits - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V, VIN = 0.4 Vf Tempb Min.d Full 0 V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V Room Full Typ.c Max.d Unit 3 V 7.3 8.8 10.1 Ω Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) IS(off) Switch Off Leakage Currentg ID(off) Channel-On Leakage Currentg V+ = 3.3 V, V- = 0 V VS = 1, 2 V, VD = 2, 1 V Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 1 10 nA ID(on) V+ = 3.3 V, V- = 0 V VD = VS = 1, 2 V Room Full -1 - 10 Input Current, VIN Lowe IIL VIN Under Test = 0.4 V Full -1 0.02 1 Highe IIH VIN Under Test = 2.4 V Full -1 0.02 1 Turn-On Time tON Room Full 90 110 125 Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF, VS = 1.5 V See Figure 2 Room Full 32 84 99 Room 31 pC dB Digital Control Input Current, VIN µA Dynamic Characteristics Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF e OIRR RL = 50 Ω, CL = 5 pF , f = 1 MHz Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Charge Injectione Off-Isolation f = 1 MHz Room - 60 Room 35 Room 34 Room 77 ns pF Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70679 S-82265-Rev. F, 29-Sep-08 www.vishay.com 5 DG9421, DG9422 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 IS = 5 mA V+ = 3.0 V 8 R ON - On-Resistance (Ω) R ON - On-Resistance (Ω) T = 25 °C IS = 5 mA V+ = 3.0 V 6 V+ = 5.0 V 4 V+ = 10.8 V 8 A B 6 A C B 4 C 2 2 A = 85 °C B = 25 °C C = - 40 °C V+ = 12 V 0 0 0 2 4 6 8 10 0 12 2 3 4 5 VCOM - Analog Voltage (V) RON vs. VCOM and Supply Voltage RON vs. Analog Voltage and Temperature 1000 V± = ± 5 V IS = 5 mA V+ = ± 5 V VIN = 0 V I+ - Supply Current (pA) RON - On-Resistance (Ω) 1 VCOM - Analog Voltage (V) 8 6 4 A 100 B 2 A = 85 °C B = 25 °C C = - 40 °C C 0 10 -5 -3 -1 1 3 5 - 60 - 40 - 20 0 20 40 60 Drain Voltage (V) Temperature (°C) RON vs. Analog Voltage and Temperature Supply Current vs. Temperature 10 m 80 100 80 100 100 V+ = 5 V V- = 0 V Leakage Current (pA) 1m I+ - Supply Current (A) V+ = 5.0 V 100 µ 10 µ 1µ 10 I(on) I(off) 100 n 1 10 n 10 100 1K 10K 100K 1M 10M Input Switching Frequences (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 6 - 60 - 40 - 20 0 20 40 60 Temperature (°C) Leakage Current vs. Temperature Document Number: 70679 S-82265-Rev. F, 29-Sep-08 DG9421, DG9422 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 V+ = 5 V V- = 0 V V+ = ± 5 V Leakage Current (pA) Leakage Current (pA) 60 10 I(on) 1 I(off) INO(off)/INC(off) 20 ICOM(off) - 20 ICOM(on) - 60 - 100 0.1 - 60 - 40 - 20 0 20 40 60 80 0 100 1 3 4 5 VCOM, V NO, V NC - Analog Voltage (V) Temperature (°C) Leakage vs. Analog Voltage Leakage Current vs. Temperature 120 400 t ON , t OFF - Switching Time (µs) V+ = 12 V V- = 0 V 300 Leakage Current (pA) 2 200 100 ICOM(on) 0 - 100 INO(off)/INC(off) - 200 - 300 100 tON V+ = 3 V 80 60 tON V+ = 5 V tOFF V+ = 5 V 40 20 ICOM(off) 2 tOFF V+ = 12 V tON V+ = 12 V 0 - 60 - 400 0 tOFF V+ = 3 V 4 6 8 10 12 - 40 - 20 0 VCOM, V NO, V NC - Analog Voltage (V) 20 40 60 80 100 Temperature (°C) Switching Time vs. Temperature and Supply Voltage (DG9421) Leakage vs. Analog Voltage 2.5 10 Loss 0 V T - Switching Threshold (V) V+ = 3 V RL = 50 Ω - 10 Loss, OIRR (dB) - 20 - 30 - 40 OIRR - 50 - 60 - 70 2.0 1.5 1.0 0.5 - 80 0.0 - 90 100K 1M 10M 100M Frequency (MHz) Insertion Loss, Off Isolation vs. Frequency Document Number: 70679 S-82265-Rev. F, 29-Sep-08 1G 0 2 4 6 8 10 12 14 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage www.vishay.com 7 DG9421, DG9422 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 300 300 V+ = 12 V 250 200 200 150 150 Q - Charge Injection (pC) Q - Charge Injection (pC) 250 100 50 0 V+ = 5 V V+ = 3 V - 50 - 100 - 150 100 50 0 - 50 - 100 - 150 - 200 - 200 - 250 - 250 - 300 -6 - 300 0 2 4 6 8 10 V=±5V 12 -4 -2 0 2 4 6 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage SCHEMATIC DIAGRAM Typical Channel V+ NC/NO VLevel Shift/ Drive VIN V+ GND COM V- Figure 1. TEST CIRCUITS V+ Logic Input VS D VO IN GND RL 300 Ω V- tOFF Switch Input* VCL (includes fixture and stray capacitance) RL RL + rDS(on) VS VO CL 35 pF Switch Output VO = V S tr < 5 ns tf < 5 ns 50 % 0V V+ S VNC/NO Switch Input* 90 % 0V tON 90 % VO - VS Note: * Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time www.vishay.com 8 Document Number: 70679 S-82265-Rev. F, 29-Sep-08 DG9421, DG9422 Vishay Siliconix TEST CIRCUITS ΔV O V+ VO V+ Rg S INX D IN Vg OFF VO ON OFF CL 10 nF 3V V- GND OFF INX V- ON Q = ΔVO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. Figure 3. Charge Injection V+ C V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V , 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VS VO V- C = RF bypass Figure 4. Crosstalk V+ V+ C C V+ S VS VO D V+ S Rg = 50 Ω 0 V, 2.4 V RL 50 Ω IN Meter IN GND V- HP4192A Impedance Analyzer or Equivalent C 0 V, 2.4 V D VOff Isolation = 20 log GND V- C VS VO C = RF Bypass Figure 5. Off Isolation V- Figure 6. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70679. Document Number: 70679 S-82265-Rev. F, 29-Sep-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1