VISHAY DG2515

Not for New Design
DG2515, DG2516
Vishay Siliconix
3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2515, DG2516 are low-voltage dual single-pole/
double-throw monolithic CMOS analog switches. Designed
to operate from 1.8 V to 5.5 V power supply, the DG2515,
DG2516 achieves a bandwidth of 235 MHz while providing
low on-resistance (3 Ω), excellent on-resistance matching
(0.2 Ω) and flatness (1 Ω) over the entire signal range.
• 1.8 V to 5.5 V single supply operation
• Low RON: 3 Ω at 4.2 V
• 235 MHz, - 3 dB bandwidth
• Low off-isolation, - 51 dB at 10 MHz
• + 1.6 V logic compatible
The DG2515, DG2516 offers the advantage of high linearity
that reduces signal distortion, making ideal for audio, video,
and USB signal routing applications. Additionally, the
DG2515, DG2516 are 1.6 V logic compatible within the full
operation voltage range.
BENEFITS
Built on Vishay Siliconix’s proprietary sub-micron highdensity process, the DG2515, DG2516 brings low power
consumption at the same time as reduces PCB spacing with
the MSOP10 package.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For analog
switching products manufactured with 100 % matte tin
device termination, the lead (Pb)-free "- E3" suffix is being
used as a designator.
•
•
•
•
RoHS
COMPLIANT
High linearity
Low power consumption
High bandwidth
Full rail signal swing range
APPLICATIONS
•
•
•
•
•
•
•
USB/UART signal switching
Audio/video switching
Cellular phone
Media players
Modems
Hard drives
PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2515DQ
IN1
1
10
COM1
NO1
2
9
NC1
GND
3
8
V+
NO2
IN2
4
7
NC2
5
6
COM2
TRUTH TABLE
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
Top View
DG2516DQ
IN1
1
10
COM1
NC1
2
9
NO1
GND
3
8
V+
NC2
4
7
NO2
IN2
5
6
COM2
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Package
MSOP-10
Part Number
DG2515DQ-T1-E3
DG2516DQ-T1-E3
Top View
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
www.vishay.com
1
Not for New Design
DG2515, DG2516
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference to GND
V+
- 0.3 to + 6
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 50
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
± 200
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
MSOP-10
mA
- 65 to 150
°C
320
mW
c
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
SPECIFICATIONS V+ = 3 V
Parameter
Analog Switch
Symbol
Analog Signal Ranged
VNO, VNC,
VCOM
On-Resistance
RON Flatness
RON Match Between Channels
Switch Off Leakage Current
f
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
RON
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
Room
Full
3.2
4.5
5.0
RON
Flatness
V+ = 2.7 V, VCOM = 1.5, 2 V
INO/NC = 10 mA
Room
Full
1.0
1.4
16
ΔRON
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Currentf
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve
ICOM(on)
V+ = 3.6 V, VNO, VNC = 0.3 V/3 V
VCOM = 3 V/0.3 V
V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
-1
- 10
1
10
Room
Full
Room
Full
-1
- 10
-1
- 10
1
10
1
10
1.4
Ω
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
Input Current
IINL or IINH
VIN = 0 V or V+
Full
V+ = 2.7 V, VNO or VNC = 1.5 V
RL = 300 Ω, CL = 35 pF
Room
Full
Room
Full
Full
0.5
12
1
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
30
25
70
100
50
70
ns
Break-Before-Make Time
td
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
24
pC
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Room
235
MHz
Charge
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF
Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF
NO, NC Off Capacitanced
Channel-On Capacitanced
1
f = 1 MHz
Room
- 71
f = 10 MHz
Room
- 51
f = 1 MHz
Room
- 74
f = 10 MHz
Room
- 52
CNO(off)
Room
17
CNC(off)
Room
17
Room
40
Room
40
Full
0.01
CNO(on)
VIN = 0 or V+, f = 1 MHz
CNC(on)
dB
pF
Power Supply
Power Supply Current
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2
I+
VIN = 0 or V+
1.0
µA
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
Not for New Design
DG2515, DG2516
Vishay Siliconix
SPECIFICATIONS V+ = 5 V
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.0 Ve
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
Analog Switch
VNO, VNC,
VCOM
Analog Signal Ranged
On-Resistance
RON Flatness
RON Match Between Channels
Switch Off Leakage Current
RON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
3
4.0
4.3
RON
Flatness
V+ = 4.2 V, VCOM = 1, 2, 3.5 V
INO/NC = 10 mA
Room
Full
1.1
1.4
1.6
ΔRON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
2.0
Ω
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Cin
Input Capacitance
IINL or IINH
Input Current
Full
VIN = 0 V or V+
Full
V
0.8
12
1
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
V+ = 4.2 V, VNO or VNC = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
25
50
70
Room
Full
20
40
50
td
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Full
d
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Break-Before-Make Time
Charge Injection
Off-Isolationd
Crosstalk
OIRR
d
XTALK
Source Off Capacitanced
Channel-On Capacitance
d
RL = 50 Ω, CL = 5 pF
RL = 50 Ω, CL = 5 pF
f = 1 MHz
1
49
pC
Room
235
MHz
Room
- 71
f = 10 MHz
Room
- 51
f = 1 MHz
Room
- 74
Room
- 52
CNO(off)
Room
17
CNC(off)
Room
17
Room
40
Room
40
CNO(on)
f = 10 MHz
VIN = 0 or V+, f = 1 MHz
CNC(on)
ns
dB
pF
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
www.vishay.com
3
Not for New Design
DG2515, DG2516
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
8
V+ = 1.8 V
7
V+ = 2.7 V
85 °C
25 °C
- 40 °C
T = 25 °C
IS = 10 mA
RON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
4
6
5
V+ = 2.7 V
4
3
V+ = 4.2 V
2
3
2
V+ = 4.2 V
85 °C
1
- 25 °C
1
- 40 °C
0
0
0
1
2
3
4
0
5
1
2
5
RON vs. Analog Voltage and Temperature
10 000
10 mA
1 mA
V+ = 5 V
VIN = 0 V
I+ - Supply Current (A)
I+ - Supply Current (nA)
4
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
RON vs. VCOM and Supply Voltage
1000
3
100
10
V+ = 5 V
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
1
- 60
100 pA
- 40
- 20
0
20
40
60
80
100
10
100
1K
10K
100K
1M
10M
Input Switching Frequency (Hz)
Temperature (°C)
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
1000
10 000
V+ = 5 V
800
V+ = 5 V
600
Leakage Current (pA)
Leakage Current (pA)
1000
I NO(off), I NC(off)
100
ICOM(on)
10
ICOM(off)
400
200
ICOM(on)
0
INO(off), I NC(off)
- 200
- 400
- 600
ICOM(off)
- 800
1
- 40
- 20
0
20
40
60
Temperature (°C)
Leakage Current vs. Temperature
www.vishay.com
4
80
- 1000
0.0
1.0
2.0
3.0
4.0
5.0
VCOM, VNO, VNC - Analog Voltage (V)
Leakage vs. Analog Voltage
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
Not for New Design
DG2515, DG2516
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
0
RL = 50 Ω
-2
tON V+ = 4.2 V
25
-4
Loss (dB)
t ON / t OFF - Switching Time (µs)
30
20
15
-8
tOFF V+ = 2.7 V
10
-6
V+ = 5 V
RL = 50 Ω
- 10
5
0
- 60
- 12
- 40
- 20
0
20
40
60
80
100
100K
1M
Temperature (°C)
100M
10M
1G
Frequency (Hz)
Switching Time vs. Temperature
Insertion Loss vs. Frequency
0
60
V+ = 5 V
RL = 50 Ω
- 10
40
Q - Charge Injection (pC)
OIRR, X TALK (dB)
- 20
- 30
- 40
- 50
OIRR
- 60
- 70
XTALK
20
V+ = 5 V
0
- 20
V+ = 3 V
- 40
- 80
- 90
100K
- 60
1M
100M
10M
1G
0
1
2
3
4
Frequency (Hz)
VCOM - Analog Voltage (V)
Off-Isolation and Crosstalk vs. Frequency
Charge Injection vs. Analog Voltage
5
VT - Switching Threshold (V)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
www.vishay.com
5
Not for New Design
DG2515, DG2516
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
NO or NC
Switch
Input
VINL
Switch Output
COM
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x VOUT
IN
Logic
Input
RL
300 Ω
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT
VCOM
RL
RL
R ON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
NC
RL
300 Ω
IN
CL
35 pF
GND
VNC = VNO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
COM
NC or NO
VOUT
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 73453
S-82589-Rev. B, 27-Oct-08
Not for New Design
DG2515, DG2516
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
COM
Meter
COM
RL
0 V, 2.0 V
0 V, 2.0 V
IN
GND
NC or NO
GND
Analyzer
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
VCOM
Off Isolation = 20 log V
NO NC
Figure 4. Off-Isolation
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73453.
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1