CYSTEKEC DTC115TN3

Spec. No. : C358N3
Issued Date : 2004.03.09
Revised Date :
Page No. : 1/4
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC115TN3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTA115TN3
• Pb-free package
Equivalent Circuit
Outline
DTC115TN3
SOT-23
C
B
C
R1
E
R1=100 kΩ
B:Base
C:Collector
E:Emitter
B
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
DTC115TN3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
50
50
5
100
200
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
Spec. No. : C358N3
Issued Date : 2004.03.09
Revised Date :
Page No. : 2/4
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max.
Unit
Test Conditions
Collector-Base Breakdown Voltage
VCBO
50
-
-
V
IC=50µA
Collector-Emitter Breakdown Voltage
VCEO
50
-
-
V
IC=1mA
Emitter-Base Breakdown Voltage
VEBO
5
-
-
V
IE=50µA
Collector-Base Cutoff Current
ICBO
-
-
0.5
µA
VCB=50V
Emitter-Base Cutoff Current
IEBO
-
-
0.5
µA
VEB=4V
VCE(sat)
-
-
0.3
V
IC=1mA, IB=0.1mA
DC Current Gain
hFE
100
-
600
-
VCE=5V, IC=1mA
Input Resistance
R
70
100
130
kΩ
Transition Frequency
fT
-
250
-
MHz
Collector-Emitter Saturation Voltage
VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Ordering Information
Device
DTC115TN3
DTC115TN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
8U
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358N3
Issued Date : 2004.03.09
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
[email protected]=5V
100
[email protected]=20IB
[email protected]=10IB
10
10
0.1
1
10
Collector Current---IC(mA)
100
0.1
1
10
Collector Current --- IC(mA)
100
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
DTC115TN3
50
100
150
Ambient Temperature --- Ta(℃ )
200
CYStek Product Specification
Spec. No. : C358N3
Issued Date : 2004.03.09
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
B
8U
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style : Pin 1.Base 2.Emitter 3.Collector
J
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC115TN3
CYStek Product Specification