Spec. No. : C358N3 Issued Date : 2004.03.09 Revised Date : Page No. : 1/4 CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC115TN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA115TN3 • Pb-free package Equivalent Circuit Outline DTC115TN3 SOT-23 C B C R1 E R1=100 kΩ B：Base C：Collector E：Emitter B E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature DTC115TN3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 50 50 5 100 200 150 -55~+150 V V V mA mW °C °C CYStek Product Specification Spec. No. : C358N3 Issued Date : 2004.03.09 Revised Date : Page No. : 2/4 CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage VCBO 50 - - V IC=50µA Collector-Emitter Breakdown Voltage VCEO 50 - - V IC=1mA Emitter-Base Breakdown Voltage VEBO 5 - - V IE=50µA Collector-Base Cutoff Current ICBO - - 0.5 µA VCB=50V Emitter-Base Cutoff Current IEBO - - 0.5 µA VEB=4V VCE(sat) - - 0.3 V IC=1mA, IB=0.1mA DC Current Gain hFE 100 - 600 - VCE=5V, IC=1mA Input Resistance R 70 100 130 kΩ Transition Frequency fT - 250 - MHz Collector-Emitter Saturation Voltage VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Ordering Information Device DTC115TN3 DTC115TN3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 8U CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358N3 Issued Date : 2004.03.09 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 HFE@VCE=5V 100 VCESAT@IC=20IB VCESAT@IC=10IB 10 10 0.1 1 10 Collector Current---IC(mA) 100 0.1 1 10 Collector Current --- IC(mA) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 DTC115TN3 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification Spec. No. : C358N3 Issued Date : 2004.03.09 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B 8U S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style : Pin 1.Base 2.Emitter 3.Collector J *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC115TN3 CYStek Product Specification