LED - Chip Preliminary 10.04.2007 ELС-460-34 rev. 01/07 Radiation Type Technology Electrodes Blue Standard InGaN/Al2O3 Both on top side typ. dimensions in µm (±20 µm) 300 Ø 80 typ. thickness 90 (±20) µm P 300 front side metalization Au-alloy, 0.5 µm backside metalization N Al-alloy, 1.5 µm Maximum Ratings Tamb = 25°C, unless otherwise specified Test conditions Parameter Symbol Value Unit IF 30 mA IFM 100 mA Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Typ Max Unit 3.3 3.5 V Forward current (DC) (tP ≤ 50 µs, tP /T = 1/2) Peak forward current Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF Reverse voltage IF = 10 µA VR 5 Luminous intensity1 IF = 20 mA Ιv 50 60 Peak wavelength IF = 20 mA λP 450 460 Dominant wavelength IF = 20 mA λD 463 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 25 nm Switching time IF = 20 mA tr , t f 20 ns V mcd 470 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Ιv(typ) [mcd] VF(typ) [V] Quantity ELС-460-34 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1