FDMS7680 N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Applications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching for Desktop and Server 100% UIL tested OringFET / Load Switch RoHS Compliant DC-DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Ratings 30 +/-20 Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG V 28 53 (Note 1a) 14 (Note 3) 29 -Pulsed A 80 Single Pulse Avalanche Energy EAS Units V Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 33 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.7 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7680 Device FDMS7680 ©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7680 N-Channel PowerTrench® MOSFET April 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.25 1.9 -6 mV/°C VGS = 10 V , ID = 14 A 5.6 VGS = 4.5 V, ID = 11 A 8.0 11 VGS = 10 V, ID = 14 A, TJ = 125 °C 7.3 10.1 VDS = 5 V, ID = 14 A 85 6.9 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1390 1850 pF 430 575 pF 60 85 pF 0.9 2.0 Ω 10 20 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 14 A, VGS = 10 V, RGEN = 6 Ω 4 10 ns 21 34 ns 3 10 ns Total Gate Charge VGS = 0 V to 10 V 20 28 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 14 A 9 13 4.6 nC 2.3 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 VGS = 0 V, IS = 14 A (Note 2) 0.83 1.3 IF = 14 A, di/dt = 100 A/µs IF = 14 A, di/dt = 300 A/µs V 24 39 ns 8 15 nC 20 36 ns 15 27 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. ©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C 2 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 80 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 60 VGS = 3.5 V VGS = 4 V 40 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 20 VGS = 3 V 0 0 1 2 VGS = 3 V 6 5 VGS = 3.5 V 4 VGS = 4 V 3 2 1 VGS = 4.5 V 0 3 0 20 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 80 25 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (mΩ) ID = 14 A VGS = 10 V rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 14 A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 20 15 TJ = 125 oC 10 5 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 80 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 7 60 VDS = 5 V TJ = 150 oC 40 TJ = 25 oC 20 TJ = -55 oC 0 1 2 3 4 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3000 VDD = 15 V ID = 14 A Ciss 8 1000 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 16 20 30 0.1 24 1 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 50 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 50 40 30 VGS = 10 V 20 Limited by Package VGS = 4.5 V 10 o RθJC = 3.7 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 150 1000 P(PK), PEAK TRANSIENT POWER (W) 100 us 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TC = 25 oC 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.1 1 10 100 200 TC = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C SINGLE PULSE RθJA = 125 oC/W VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 -2 10 -1 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15. 16 12 CURRENT (A) di/dt = 300 A/µs 8 4 0 -4 0 20 40 60 80 100 120 TIME (ns) Figure 14. Body Diode Reverse Recovery Characteristics ©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C 5 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS7680 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS7680 Rev.C 6 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 ©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C 7 www.fairchildsemi.com FDMS7680 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.