N-Channel MOS FET FKP280A September, 2005 ■Package---FM100(TO3P Full Mold) ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2) Ｇ(1) Ｓ(3) ■Absolute maximum ratings (Ta=25°C) Parameter Symbol Rating Unit Drain to Source Voltage VDSS 280 Ｖ Gate to Source Voltage VGSS ±30 Ｖ Continuous Drain Current ID ±40A Ａ Pulsed Drain Current ID(pulse) *1 ±160A Ａ Maximum Power Dissipation PD 85 (Tc=25°C) Ｗ Single Pulse Avalanche Energy EAS *2 400 ｍＪ Avalanche Current IAS 40 Ａ Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C *1. PW ≤ 100 μsec, duty cycle ≤ 1% *2. VDD=20V, L=460μH, ILp=40A, unclamped, RG=50Ω, See Fig.1 Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-001EA-050912 N-Channel MOS FET FKP280A September, 2005 Electrical characteristics (Ta=25°C) Unit Symbol Drain to Source breakdown Voltage V(BR)DSS Gate to Source Leakage Current IGSS VGS=±30V ±100 nA Drain to Source Leakage Current IDSS VDS=280V, VGS=0V 100 μA Gate Threshold Voltage VTH VDS=10V, ID=1mA 3．0 4．5 V Forward Transconductance Re(Yfs) VDS=10V, ID=20A 25 Static Drain to Source On-Resistance RDS(ON) ID=20A, VGS=10V Input Capacitance Ciss VDS=25V 3800 Output Capacitance Coss VGS=0V 580 Reverse Transfer Capacitance Crss f=1MHz 190 Turn-On Delay Time td(on) ID=20A, VDD≈140V 40 Rise Time tr RL=7Ω, VGS=10V 90 Turn-Off Delay Time td(off) Rg=5Ω 160 Fall Time tf See Fig.2 70 Source-Drain Diode Forward Voltage VSD ISD=40A,VGS=0V 1.0 Gate Threshold Voltage Temp. Coefficient Test Conditions Limits Parameter ID=100μA,VGS=0V MIN. TYP. MAX. 280 V 38 46 S 53 mΩ pF ns ΔVTH/ΔTch VDS=10V, ID=1mA -11 1.5 V mV/°C Sanken Electric Co.,Ltd. T02-001EA-050912 2/9 N-Channel MOS FET FKP280A September, 2005 Characteristic Curves (Tc=25°C) ID-VG S C ha r a ct er ist ics (t y pica l) ID-VDS C ha r a ct er ist ics (t y pica l) VDS=10V VGS=10V 40 40 6.0V 5.5V 30 ID (A) ID (A) 30 20 20 5.0V 10 125℃ 10 25℃ Tc=-55℃ 4.5V 0 0 0 2 4 6 8 10 0 2 VDS (V) 4 6 8 10 VGS (V) R DS (ON)-ID C ha r a ct er ist ics (t y pica l) VDS -VG S C ha r a ct er ist ics (t y pica l) VGS=10V 60 5 50 4 3 VDS (V) RDS(on) (mΩ) 40 30 20 2 ID=40A 10 1 20A 0 0 10 20 ID (A) 30 40 0 1 R DS (ON)-Tc C ha r a ct er ist ics (t y pica l) 150 10 VGS (V) 100 ID=20A VGS=10V RDS(on) (mΩ) 100 50 0 -100 -50 0 50 100 150 Tc (℃) Sanken Electric Co.,Ltd. T02-001EA-050912 3/9 N-Channel MOS FET FKP280A September, 2005 Characteristic Curves (Tc=25°C) C a pa cit a nce-VDS C ha r a ct er ist ics (t y pica l) R e(y fs)-ID C ha r a ct er ist ics (t y pica l) f=1MHz VGS=0V VDS=10V 10000 100 Ciss 10 1000 Capacitance (pF) Re(yfs) (S) Tc=-55℃ 25℃ 1 125℃ Coss Crss 100 0.1 0.01 0.01 10 0.1 1 ID (A) 10 100 0 10 30 VDS (V) S AFE O PERAT I N G AREA IDR-VS D C ha r a ct er ist ics (t y pica l) 20 40 50 1000 40 ID(pulse) max 100 ID max 30 100μs ID (A) ID (A) 10 20 10V RDS(on) LIMITED 1ms 1 10ms 10 0.1 VGS=0V Tc=25℃ 1shot 0 0.0 0.5 1.0 DC 0.01 1.5 0.1 VSD (V) 1 10 100 1000 VDS (V) P D-Ta C ha r a ct er ist ics 100 80 60 PD (W) With infinite heatsink 40 20 Without heatsink 0 0 50 100 150 Ta (℃) Sanken Electric Co.,Ltd. T02-001EA-050912 4/9 N-Channel MOS FET FKP280A September, 2005 Fig.1 Unclamped Inductive Test Method EAS= L V(BR)DSS 1 •L•ILP2 • 2 V(BR)DSS − VDD V(BR)DSS IL VDS ILp RG VDS VDD VGS IL VDD 0V (a) Test Circuit Fig.2 (b) Waveforms Switching Time Test Method RL VDD≈140V ID ID=20A VDS RG RL=7Ω VDD VGS VGS=10V RG=5Ω 0V P.W.=10μs Duty cycle≦1% (a) Test Circuit 90% VGS 10% 90% VDS 10% td(on) tr td(off) ton tf toff (b) Waveforms Sanken Electric Co.,Ltd. T02-001EA-050912 5/9 N-Channel MOS FET FKP280A September, 2005 Outline FM100 (TO3P Full Mold) Measured at the root Measured at the root Measured at the root Plane (1) (2) Side (3) Mass: Approx.6.5g Sanken Electric Co.,Ltd. T02-001EA-050912 6/9 N-Channel MOS FET FKP280A September, 2005 <Worldwide Contacts> Asia Pacific China Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261 India Saket Devices Pvt. Ltd. Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Tel: 91-20-5621-2340 91-20-2528-5449 Fax: 91-20-2528-5459 Japan Sanken Electric Co., Ltd. Overseas Sales Headquaters Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 Korea Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145 Singapore Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720 Tel: 65-6291-4755 Fax: 65-6297-1744 Sanken Electric Co.,Ltd. T02-001EA-050912 7/9 N-Channel MOS FET FKP280A September, 2005 Europe United Kingdom Sanken Power Systems (UK) Limited Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK Tel: 44-1656-869-100 Fax: 44-1656-869-162 North America United States Allegro MicroSystems, Inc. 115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000 Fax: 1-508-853-3353 Allegro MicroSystems, Inc. (Southern California) 14 Hughes Street, Suite B105, Irvine, CA 92618 Tel: 1-949-460-2003 Fax: 1-949-460-7837 Sanken Electric Co.,Ltd. T02-001EA-050912 8/9 N-Channel MOS FET FKP280A September, 2005 CAUTION / WARNING ●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. ● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. ● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. ● When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users’ responsibility. ● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. ● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. 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Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad. Sanken Electric Co.,Ltd. T02-001EA-050912 9/9