Transistors SMD Type NPN Silicon Planar Medium Power Transistor FZT657 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 Low saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 3 Emitter 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 0.5 A Power Dissipation at Tamb=25 Ptot 2 W Tj:Tstg -55 to +150 Operating and Storage Temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ. Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100ìA 300 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA* 300 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100ìA 5 V ICBO VCB=200V IEBO Collector Cut-Off Current 0.1 ìA VEB=3V 0.1 ìA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA* 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA* 1.0 V Base-Emitter Turn-On Voltage VBE(on) 1.0 V Emitter Cut-Off Current Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo IC=100mA, VCE =5V* IC=10mA, VCE =5V* 40 IC=100mA, VCE =5V* 50 IC=10mA, VCE =20V,f=20MHz 30 VCB =20V, f=1MHz MHz 20 pF * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking FZT657 www.kexin.com.cn 1