HUASHAN H2682

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H2682
█ APPLICATIONS
. Audio Power Amplifie.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-126ML
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 8W
PC——Collector Dissipation(TA=25℃)…………………… 1.2W
VCBO ——Collector-Base Voltage………………………… 180V
1―Emitter,E
2―Collector,C
3―Base,B
VCEO ——Collector-Emitter Voltage……………………… 180V
VEBO ——Emitter-Base Voltage……………………………… 5V
IC——Collector Current……………………………………100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
180
V
IC=100μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
180
V
IC=1mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
5
V
IE=10μA,IC=0
ICBO
Collector Cut-off Current
1
μA VCB=180V, IE=0
IEBO
Emitter Cut-off Current
1
μA VEB=3V, IC=0
HFE(1) DC Current Gain
90
HFE(2) DC Current Gain
100
VCE=5V, IC=1mA
190
VCE=5V, IC=10mA
320
VCE(sat) Collector- Emitter Saturation Voltage
0.12
0.5
V
IC=50mA, IB=5mA
VBE(sat) Base-Emitter Saturation Voltage
0.8
1.5
V
IC=50mA, IB=5mA
ft
Cob
Current Gain-Bandwidth Product
200
Output Capacitance
3.2
MHz
5.0
█ hFE Classification
O
Y
100—200
160—320
pF
VCE=10V, IC=20mA,
VCB=10V, IE=0,f=1MHz